FANTINI, Fausto
 Distribuzione geografica
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Continente #
NA - Nord America 16.079
AS - Asia 6.142
EU - Europa 5.894
SA - Sud America 732
AF - Africa 49
OC - Oceania 8
Continente sconosciuto - Info sul continente non disponibili 7
Totale 28.911
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Nazione #
US - Stati Uniti d'America 15.886
GB - Regno Unito 2.442
CN - Cina 2.340
SG - Singapore 1.729
HK - Hong Kong 992
SE - Svezia 739
DE - Germania 650
BR - Brasile 627
IT - Italia 538
UA - Ucraina 430
TR - Turchia 366
RU - Federazione Russa 290
FI - Finlandia 256
KR - Corea 246
VN - Vietnam 183
FR - Francia 174
CA - Canada 164
BG - Bulgaria 160
IN - India 65
IE - Irlanda 48
AR - Argentina 44
BD - Bangladesh 32
BE - Belgio 31
NL - Olanda 29
ZA - Sudafrica 24
ES - Italia 22
IQ - Iraq 22
JP - Giappone 20
ID - Indonesia 18
MX - Messico 18
PL - Polonia 16
EC - Ecuador 14
AE - Emirati Arabi Uniti 13
IL - Israele 13
MY - Malesia 13
TW - Taiwan 12
VE - Venezuela 12
UZ - Uzbekistan 10
CO - Colombia 9
PK - Pakistan 9
AT - Austria 8
LT - Lituania 8
PE - Perù 8
IR - Iran 7
MA - Marocco 7
CL - Cile 6
RO - Romania 6
AL - Albania 5
AZ - Azerbaigian 5
CH - Svizzera 5
DK - Danimarca 5
HU - Ungheria 5
JO - Giordania 5
KE - Kenya 5
NP - Nepal 5
NZ - Nuova Zelanda 5
PH - Filippine 5
TN - Tunisia 5
BO - Bolivia 4
EU - Europa 4
KZ - Kazakistan 4
PY - Paraguay 4
SA - Arabia Saudita 4
AU - Australia 3
BA - Bosnia-Erzegovina 3
BH - Bahrain 3
DO - Repubblica Dominicana 3
EE - Estonia 3
EG - Egitto 3
GR - Grecia 3
JM - Giamaica 3
OM - Oman 3
PS - Palestinian Territory 3
TH - Thailandia 3
UY - Uruguay 3
BB - Barbados 2
HR - Croazia 2
KG - Kirghizistan 2
LA - Repubblica Popolare Democratica del Laos 2
LU - Lussemburgo 2
LV - Lettonia 2
NO - Norvegia 2
RS - Serbia 2
SK - Slovacchia (Repubblica Slovacca) 2
XK - ???statistics.table.value.countryCode.XK??? 2
AM - Armenia 1
BN - Brunei Darussalam 1
CI - Costa d'Avorio 1
CR - Costa Rica 1
CW - ???statistics.table.value.countryCode.CW??? 1
CY - Cipro 1
CZ - Repubblica Ceca 1
DZ - Algeria 1
GE - Georgia 1
HN - Honduras 1
IS - Islanda 1
LK - Sri Lanka 1
MD - Moldavia 1
ME - Montenegro 1
MT - Malta 1
Totale 28.902
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Città #
Fairfield 1.747
Southend 1.614
Santa Clara 1.593
Woodbridge 1.295
Hefei 1.106
Chandler 1.080
Singapore 1.017
Houston 1.015
Hong Kong 987
Ashburn 981
Jacksonville 963
Ann Arbor 701
Dearborn 674
Seattle 631
Wilmington 587
Cambridge 586
London 368
Nyköping 359
Beijing 289
Izmir 264
Des Moines 262
Seoul 236
Los Angeles 179
Modena 174
San Diego 172
Princeton 161
Sofia 160
Eugene 156
Chicago 133
Council Bluffs 122
Munich 117
Moscow 99
Helsinki 94
Montréal 92
Mcallen 91
Buffalo 83
New York 83
Kent 80
Shanghai 79
The Dalles 74
Milan 60
São Paulo 59
Grafing 56
Ho Chi Minh City 56
Boardman 51
Dublin 48
Hanoi 45
Salt Lake City 45
Dallas 39
Bremen 38
Redwood City 38
Toronto 37
Guangzhou 33
Brussels 30
Elk Grove Village 30
Kunming 29
Nanjing 26
Norwalk 26
San Jose 26
Tampa 26
Frankfurt am Main 23
Rome 22
Columbus 21
Verona 21
Padova 20
Philadelphia 19
Wuhan 19
Belo Horizonte 17
Ottawa 17
Rio de Janeiro 17
Shenyang 16
Auburn Hills 15
Jinan 15
Tokyo 15
Brooklyn 14
Indiana 14
Atlanta 13
Cagliari 13
Dulles 13
Johannesburg 13
Phoenix 13
Saint Petersburg 13
Changsha 12
Nanchang 12
Pune 12
Chengdu 10
Miami 10
Sterling 10
Taipei 10
Baghdad 9
Bengaluru 9
Denver 9
Redondo Beach 9
San Francisco 9
Tianjin 9
Warsaw 9
Bologna 8
Brasília 8
Dhaka 8
Fortaleza 8
Totale 21.836
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Nome #
The Correlation Resistance for Low-Frequency Noise Compact Modeling of Si/SiGe HBT's 632
Experimental and Numerical Analysis of Hole Emission Process from Carbon-Related Traps in GaN Buffer Layers 301
Reliability in automotive electronics: a case study applied to diesel engine control 292
Appunti di Microelettronica 280
False surface-trap signatures induced by buffer traps in AlGaN-GaN HEMTs 274
Failure Analysis-assisted FMEA 255
Analysis of GaN HEMT Failure Mechanisms During DC and Large-Signal RF Operation 252
Characterization and analysis of trap-related effects in AlGaN/GaN HEMTs 251
An Investigation of the Electrical Degradation of GaN High-Electron-Mobility Transistors by Numerical Simulations of DC Characteristics and Scattering Parameters 251
Study of GaN HEMTs electrical degradation by means of numerical simulations 249
Investigation of the hot-carrier degradation in Si/SiGe HBT's by intrinsic low frequency noise source modeling 248
Field plate related reliability improvements in GaN-on-Si HEMTs 248
A comparison between normally and highly accelerated electromigration tests 243
Experimental and simulated dc degradation of GaN HEMTs by means of gate-drain and gate-source reverse bias stress 242
A percolative simulation of electromigration phenomena 240
Anodic Gold corrosion in plastic encapsulated devices 240
Correlation between DC and rf degradation due to deep levels in AlGaN/GaN HEMTs 240
Analysis of current collapse effect in AlGaN/GaN HEMT: experiments and numerical simulations 236
Investigation of High-Electric-Field Degradation Effects in AlGaN/GaN HEMTs 232
A Single-Chip 5GHz WLAN Transmitter in 0.35um Si/SiGe BiCMOS Technology 232
Impact of field-plate geometry on the reliability of GaN-on-SiC HEMTs 231
Low-temperature spectrally resolved cathodoluminescence study of degradation in opto-electronic and microelectronic devices 230
Metal-GaAs interaction and contact degradation in microwave MESFETs 229
High electric field induced degradation of the DC characteristics in Si/SiGe HEMT's 229
Degradation based long-term reliability assessment for electronic components in submarine applications 229
Mechanisms of RF Current Collapse in AlGaN–GaN High Electron Mobility Transistors 228
Physical investigation of high-field degradation mechanisms in GaN/AlGaN/GaN hemts 227
On the short and long term degradation of GaInP/GaAs heterojunction bipolar transistors 225
Reliability evaluation of plastic packaged devices for long life applications by THB test 225
A stochastic approach to failure analysis in electromigration phenomena 224
Interdiffusion and compound formation in the c-Si/PtSi/(Ti-W)/Al system 224
A Foveated Retina-Like Sensor Using CCD Technology 223
Correlation between light emission and currents in pseudomorphic HEMTs 222
A Retinal CCD Sensor for Fast 2D Shape Recognition and Tracking 222
Failure mechanisms in compound semiconductor electron devices 221
Thermal characterisation of IGBT power modules 216
Activation energy in the early stage of electromigration in Al-1%Si/TiN/Ti bamboo lines 216
Design and screening of highly reliable 980nm pump lasers 215
Reliability predictions in electronic industrial applications 214
Reliability physics of compound semiconductor transistors for microwave applications 214
A percolative approach to electromigration in metallic lines 212
Electromigration testing of integrated circuit interconnections 211
Observation of latch-up phenomena in CMOS IC's by means of Digital Differential Voltage Contrast 210
Failure analysis of RuO2 thick film chip resistors 210
Correlation between dynamic Rdson transients and Carbon related buffer traps in AlGaN/GaN HEMTs 209
Degradation mechanisms induced by high current density in Al-gate GaAs MESFETs 208
Reliability investigation of InGaP/GaAs HBTs under current and temperature stress 206
On the use of matrix algebra for the description of EPROM failures 205
Reliability of GaAs MESFETs 205
Influence of interface states at Schottky junction on the large signal behaviour of Cu-gate standard AlGaN/GaN HEMTs 204
The effect of Hot Electron Stress on the DC and Microwave Characteristics of GaAs-PHEMTs and InP-HEMTs 203
A proposal for a standard procedure for moderately accelerated electromigration tests on metal lines 203
Electrical properties and thermal stability of MBE-grown Al/AlxGa1-xAs/Al(0.25)Ga(0.75)As Schottky barriers 202
Design of field-plated InP-based HEMTs 201
Increase in barrier height of Al/n-GaAs contacts induced by high current 201
Cathodoluminescence evidence of stress-induced outdiffusion of beryllium in AlGaAs/GaAs heterojunction bipolar transistors 200
Bias Dependent, Compact Low-Frequency Noise Model of GaInP/GaAs HBT: Experimental Identification and CAD Implementation 200
EPROM testing - part II: application to 16K N-channel devices 199
Evaluation of current density distribution in MESFET gates 199
Dynamic thermal characterization and modeling of packaged AlGaAs/GaAs HBT's 198
On the effects of hot electrons on the DC and RF characteristics of lattice-matched InAlAs/InGaAs/InP HEMT's 198
Sulfur-contamination of high power white LED 198
Investigation of information loss mechanisms in EPROMs 197
Design of RFIC's in 0.35um Si/SiGe BiCMOS Technology for a 5GHz Domotic Transmitter 197
Are high resolution resistometric methods really useful for early detection of electromigration damage? 196
On the effect of power cycling stress on IGBT modules 195
Analysis of High-Electric-Field Degradation in AlGaN/GaN HEMTs 194
Pulsed current stress of Berillium doped AlGaAs/GaAs HBTs 194
Enhancement and Degradation of Drain Current in Pseudomorphic AlGaAs/InGaAs HEMT's Induced by Hot-Electrons. 193
VLSI Reliability: Contributions from a Three Year National Research Program 192
Electromigration in Thin-Films for Microelectronics 192
On the ASTM electromigration test structure applied to Al-1%Si/TiN/Ti bamboo metal lines 191
A study of hot electron degradation effects in pseudomorphic HEMTs 190
Breakdown walkout in pseudomorphic HEMT's 189
Study of high-field degradation phenomena in GaN-capped AlGaN/GaN HEMTs 188
Influence of surface recombination on the burn-in effect in microwave GaInP/GaAs HBT's 188
The effect of hot electron stress on the DC and microwave characteristics of AlGaAs/InGaAs/GaAs PHEMTS 188
Very high temperature test of InP-based Laser Diodes 186
Electromigration in thin-film interconnection lines: models, methods and results 186
Electromigration effects in power MESFET rectifying and ohmic contacts 184
Reliability of compound semiconductor devices 184
Failure modes induced in TTL-LS bipolar logics by negative inputs 184
Reliability problems in TTL-LS devices 184
Analysis of hot electron degradation in pseudomorphic HEMTs by DCTS and LF noise characterisation 183
Degradation mechanisms induced by temperature in power MESFETs 182
Electrical degradation of n-Si/PtSi/(Ti-W)/Al Schottky contacts induced by thermal treatments 182
Evaluation of the hot carrier/ionizing radiation induced effects on the RF characteristics of low-complexity SiGe heterojunction bipolar transistors by numerical simulation 181
Affidabilità e fisica dei guasti nei circuiti integrati in silicio 180
Influence of RF drive and switching frequency on degradation mechanisms in GaN HEMTs 180
Power GaAs MESFET: reliability aspects and failure mechanisms 178
On the validity of resistometric technique in electromigration studies of narrow stripes 178
Bipolar Schottky logic device failure modes due to contact metallurgical degradation 177
A SEM based system for a complete characterisation of latch-up in CMOS integrated circuits 176
The thermally balanced bridge technique (TBBT): a new high resolution resistometric measurement technique for the study of electromigration-induced early resistance changes in metal stripes 175
Hot electron degradation of the DC and RF characteristics of AlGaAs/InGaAs/GaAs PHEMT’s. 175
Effects of surface and buffer traps in passivated AlGaN/GaN HEMTs 175
Negative Vbe shift due to base dopant outdiffusion in DHBT 174
Early Variations of the Base Current in In/C-doped GaInP/GaAs HBT's 174
The low frequency noise in electron devices: an engineering sight 172
Electrical and thermal simulation of local effects for electromigration 172
Totale 21.390
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Categoria #
all - tutte 108.097
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 108.097
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/20211.761 0 0 0 0 0 227 277 390 192 395 133 147
2021/20222.779 37 401 370 164 74 125 215 130 242 284 413 324
2022/20232.681 321 270 172 222 270 615 43 293 313 18 88 56
2023/20241.309 53 89 119 158 357 83 55 220 44 24 1 106
2024/20255.617 258 44 44 309 1.140 686 368 355 624 136 679 974
2025/20264.257 533 648 870 825 726 655 0 0 0 0 0 0
Totale 29.015