FANTINI, Fausto
 Distribuzione geografica
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Continente #
NA - Nord America 17.734
AS - Asia 7.695
EU - Europa 6.463
SA - Sud America 904
AF - Africa 90
OC - Oceania 9
Continente sconosciuto - Info sul continente non disponibili 7
Totale 32.902
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Nazione #
US - Stati Uniti d'America 17.444
GB - Regno Unito 2.462
CN - Cina 2.458
SG - Singapore 2.183
HK - Hong Kong 1.069
IT - Italia 768
SE - Svezia 744
BR - Brasile 729
DE - Germania 690
VN - Vietnam 689
UA - Ucraina 444
TR - Turchia 377
FR - Francia 323
FI - Finlandia 311
KR - Corea 305
RU - Federazione Russa 292
CA - Canada 204
BG - Bulgaria 165
IN - India 129
BD - Bangladesh 115
AR - Argentina 66
IQ - Iraq 51
IE - Irlanda 48
MX - Messico 43
NL - Olanda 38
PH - Filippine 33
BE - Belgio 32
JP - Giappone 32
PK - Pakistan 31
ZA - Sudafrica 30
ES - Italia 29
CO - Colombia 25
ID - Indonesia 25
EC - Ecuador 23
AE - Emirati Arabi Uniti 21
PL - Polonia 19
VE - Venezuela 19
TW - Taiwan 18
MY - Malesia 17
JO - Giordania 16
SA - Arabia Saudita 16
IL - Israele 15
CL - Cile 14
UZ - Uzbekistan 13
MA - Marocco 12
AT - Austria 11
KE - Kenya 11
NP - Nepal 11
TN - Tunisia 11
PE - Perù 10
TH - Thailandia 10
EG - Egitto 9
AZ - Azerbaigian 8
BH - Bahrain 8
CR - Costa Rica 8
LT - Lituania 8
RO - Romania 8
UY - Uruguay 8
DZ - Algeria 7
HU - Ungheria 7
IR - Iran 7
JM - Giamaica 7
AL - Albania 6
SK - Slovacchia (Repubblica Slovacca) 6
CH - Svizzera 5
DK - Danimarca 5
GT - Guatemala 5
HN - Honduras 5
KZ - Kazakistan 5
NZ - Nuova Zelanda 5
PS - Palestinian Territory 5
PY - Paraguay 5
AU - Australia 4
BA - Bosnia-Erzegovina 4
BO - Bolivia 4
EE - Estonia 4
EU - Europa 4
GR - Grecia 4
PT - Portogallo 4
RS - Serbia 4
BB - Barbados 3
BY - Bielorussia 3
CY - Cipro 3
DO - Repubblica Dominicana 3
LB - Libano 3
OM - Oman 3
PR - Porto Rico 3
SN - Senegal 3
SV - El Salvador 3
CI - Costa d'Avorio 2
CZ - Repubblica Ceca 2
GE - Georgia 2
HR - Croazia 2
KG - Kirghizistan 2
KH - Cambogia 2
LA - Repubblica Popolare Democratica del Laos 2
LU - Lussemburgo 2
LV - Lettonia 2
ME - Montenegro 2
MN - Mongolia 2
Totale 32.869
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Città #
Fairfield 1.747
Santa Clara 1.651
Southend 1.614
Ashburn 1.341
Singapore 1.329
Woodbridge 1.295
Hefei 1.106
Chandler 1.080
Hong Kong 1.055
Houston 1.019
Jacksonville 964
Ann Arbor 701
Dearborn 674
Seattle 634
Wilmington 589
Cambridge 586
San Jose 528
London 370
Nyköping 359
Beijing 323
Seoul 280
Izmir 264
Des Moines 263
Council Bluffs 213
Ho Chi Minh City 204
Los Angeles 198
Hanoi 185
Modena 176
San Diego 172
The Dalles 171
Chicago 166
Princeton 164
Sofia 161
Eugene 156
Helsinki 148
Milan 137
Lauterbourg 132
Munich 117
New York 100
Moscow 99
Montréal 92
Mcallen 91
Buffalo 90
Kent 80
Shanghai 80
São Paulo 68
Dallas 59
Grafing 56
Boardman 51
Salt Lake City 51
Dublin 48
Toronto 42
Bremen 38
Redwood City 38
Rome 34
Frankfurt am Main 33
Guangzhou 33
Miano 33
Brussels 31
Elk Grove Village 30
Da Nang 29
Kunming 29
Tampa 29
Haiphong 27
Nanjing 26
Norwalk 26
Orem 25
Atlanta 23
Baghdad 23
Belo Horizonte 23
Rio de Janeiro 23
Columbus 22
Philadelphia 22
Verona 21
Falkenstein 20
Padova 20
Tokyo 20
Brooklyn 19
Wuhan 19
Phoenix 18
Brantford 17
Ottawa 17
Shenyang 16
Auburn Hills 15
Jinan 15
Mumbai 15
Pune 15
Washington 15
Cagliari 14
Dulles 14
Indiana 14
Johannesburg 14
Miami 14
San Francisco 14
Amman 13
Chennai 13
Mexico City 13
Saint Petersburg 13
Changsha 12
Nanchang 12
Totale 24.298
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Nome #
The Correlation Resistance for Low-Frequency Noise Compact Modeling of Si/SiGe HBT's 669
Experimental and Numerical Analysis of Hole Emission Process from Carbon-Related Traps in GaN Buffer Layers 352
Reliability in automotive electronics: a case study applied to diesel engine control 344
Appunti di Microelettronica 322
False surface-trap signatures induced by buffer traps in AlGaN-GaN HEMTs 312
Analysis of GaN HEMT Failure Mechanisms During DC and Large-Signal RF Operation 309
Experimental and simulated dc degradation of GaN HEMTs by means of gate-drain and gate-source reverse bias stress 294
Failure Analysis-assisted FMEA 290
Characterization and analysis of trap-related effects in AlGaN/GaN HEMTs 289
Field plate related reliability improvements in GaN-on-Si HEMTs 282
An Investigation of the Electrical Degradation of GaN High-Electron-Mobility Transistors by Numerical Simulations of DC Characteristics and Scattering Parameters 281
Investigation of the hot-carrier degradation in Si/SiGe HBT's by intrinsic low frequency noise source modeling 280
Study of GaN HEMTs electrical degradation by means of numerical simulations 277
Impact of field-plate geometry on the reliability of GaN-on-SiC HEMTs 273
Investigation of High-Electric-Field Degradation Effects in AlGaN/GaN HEMTs 272
Analysis of current collapse effect in AlGaN/GaN HEMT: experiments and numerical simulations 272
Correlation between DC and rf degradation due to deep levels in AlGaN/GaN HEMTs 272
A percolative simulation of electromigration phenomena 270
Mechanisms of RF Current Collapse in AlGaN–GaN High Electron Mobility Transistors 269
A comparison between normally and highly accelerated electromigration tests 267
A Foveated Retina-Like Sensor Using CCD Technology 267
Anodic Gold corrosion in plastic encapsulated devices 263
A Single-Chip 5GHz WLAN Transmitter in 0.35um Si/SiGe BiCMOS Technology 262
A proposal for a standard procedure for moderately accelerated electromigration tests on metal lines 262
Low-temperature spectrally resolved cathodoluminescence study of degradation in opto-electronic and microelectronic devices 255
Reliability physics of compound semiconductor transistors for microwave applications 255
High electric field induced degradation of the DC characteristics in Si/SiGe HEMT's 254
Failure mechanisms in compound semiconductor electron devices 253
Degradation based long-term reliability assessment for electronic components in submarine applications 252
Activation energy in the early stage of electromigration in Al-1%Si/TiN/Ti bamboo lines 251
On the short and long term degradation of GaInP/GaAs heterojunction bipolar transistors 249
Metal-GaAs interaction and contact degradation in microwave MESFETs 248
Physical investigation of high-field degradation mechanisms in GaN/AlGaN/GaN hemts 248
Reliability evaluation of plastic packaged devices for long life applications by THB test 247
A Retinal CCD Sensor for Fast 2D Shape Recognition and Tracking 246
Reliability predictions in electronic industrial applications 245
A stochastic approach to failure analysis in electromigration phenomena 245
Design and screening of highly reliable 980nm pump lasers 245
Thermal characterisation of IGBT power modules 244
Correlation between dynamic Rdson transients and Carbon related buffer traps in AlGaN/GaN HEMTs 244
Correlation between light emission and currents in pseudomorphic HEMTs 243
Cathodoluminescence evidence of stress-induced outdiffusion of beryllium in AlGaAs/GaAs heterojunction bipolar transistors 243
A percolative approach to electromigration in metallic lines 243
Influence of interface states at Schottky junction on the large signal behaviour of Cu-gate standard AlGaN/GaN HEMTs 242
Interdiffusion and compound formation in the c-Si/PtSi/(Ti-W)/Al system 240
Failure analysis of RuO2 thick film chip resistors 240
Bias Dependent, Compact Low-Frequency Noise Model of GaInP/GaAs HBT: Experimental Identification and CAD Implementation 240
Observation of latch-up phenomena in CMOS IC's by means of Digital Differential Voltage Contrast 238
Electromigration testing of integrated circuit interconnections 236
Degradation mechanisms induced by high current density in Al-gate GaAs MESFETs 235
Design of field-plated InP-based HEMTs 232
Analysis of High-Electric-Field Degradation in AlGaN/GaN HEMTs 232
On the effects of hot electrons on the DC and RF characteristics of lattice-matched InAlAs/InGaAs/InP HEMT's 229
Sulfur-contamination of high power white LED 229
Increase in barrier height of Al/n-GaAs contacts induced by high current 228
Dynamic thermal characterization and modeling of packaged AlGaAs/GaAs HBT's 226
On the use of matrix algebra for the description of EPROM failures 225
EPROM testing - part II: application to 16K N-channel devices 224
A SEM based system for a complete characterisation of latch-up in CMOS integrated circuits 224
Reliability of GaAs MESFETs 224
The effect of Hot Electron Stress on the DC and Microwave Characteristics of GaAs-PHEMTs and InP-HEMTs 224
Reliability investigation of InGaP/GaAs HBTs under current and temperature stress 223
Influence of surface recombination on the burn-in effect in microwave GaInP/GaAs HBT's 223
Electrical properties and thermal stability of MBE-grown Al/AlxGa1-xAs/Al(0.25)Ga(0.75)As Schottky barriers 221
Design of RFIC's in 0.35um Si/SiGe BiCMOS Technology for a 5GHz Domotic Transmitter 221
Evaluation of the hot carrier/ionizing radiation induced effects on the RF characteristics of low-complexity SiGe heterojunction bipolar transistors by numerical simulation 221
Investigation of information loss mechanisms in EPROMs 220
On the ASTM electromigration test structure applied to Al-1%Si/TiN/Ti bamboo metal lines 220
Influence of RF drive and switching frequency on degradation mechanisms in GaN HEMTs 219
Breakdown walkout in pseudomorphic HEMT's 218
Enhancement and Degradation of Drain Current in Pseudomorphic AlGaAs/InGaAs HEMT's Induced by Hot-Electrons. 218
Evaluation of current density distribution in MESFET gates 217
Pulsed current stress of Berillium doped AlGaAs/GaAs HBTs 217
VLSI Reliability: Contributions from a Three Year National Research Program 216
Electromigration in thin-film interconnection lines: models, methods and results 216
Electromigration effects in power MESFET rectifying and ohmic contacts 214
Are high resolution resistometric methods really useful for early detection of electromigration damage? 214
Study of high-field degradation phenomena in GaN-capped AlGaN/GaN HEMTs 212
A study of hot electron degradation effects in pseudomorphic HEMTs 212
Electromigration in Thin-Films for Microelectronics 211
On the effect of power cycling stress on IGBT modules 210
The effect of hot electron stress on the DC and microwave characteristics of AlGaAs/InGaAs/GaAs PHEMTS 208
Analysis of hot electron degradation in pseudomorphic HEMTs by DCTS and LF noise characterisation 206
Bipolar Schottky logic device failure modes due to contact metallurgical degradation 206
Failure modes induced in TTL-LS bipolar logics by negative inputs 206
Reliability problems in TTL-LS devices 205
Affidabilità e fisica dei guasti nei circuiti integrati in silicio 204
Very high temperature test of InP-based Laser Diodes 203
Power GaAs MESFET: reliability aspects and failure mechanisms 203
Hot electron degradation of the DC and RF characteristics of AlGaAs/InGaAs/GaAs PHEMT’s. 203
Effects of Surface and Buffer Traps in Passivated AlGaN-GaN HEMT 202
Low Noise, Low Interference Automated Bias Networks for Low Frequency Noise Characterization Set-Up's 201
The thermally balanced bridge technique (TBBT): a new high resolution resistometric measurement technique for the study of electromigration-induced early resistance changes in metal stripes 199
Negative Vbe shift due to base dopant outdiffusion in DHBT 199
Effects of surface and buffer traps in passivated AlGaN/GaN HEMTs 199
Early Variations of the Base Current in In/C-doped GaInP/GaAs HBT's 199
The low frequency noise in electron devices: an engineering sight 197
Reliability of compound semiconductor devices 195
Improvement of breakdown and DC-to-pulse dispersion properties in field-plated InGaAs-InAlAs pHEMTs 195
On the validity of resistometric technique in electromigration studies of narrow stripes 195
Totale 24.296
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Categoria #
all - tutte 122.471
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 122.471
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/20222.779 37 401 370 164 74 125 215 130 242 284 413 324
2022/20232.681 321 270 172 222 270 615 43 293 313 18 88 56
2023/20241.309 53 89 119 158 357 83 55 220 44 24 1 106
2024/20255.617 258 44 44 309 1.140 686 368 355 624 136 679 974
2025/20267.973 533 648 870 825 726 840 795 420 766 826 401 323
2026/2027275 275 0 0 0 0 0 0 0 0 0 0 0
Totale 33.006