FANTINI, Fausto
 Distribuzione geografica
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Continente #
NA - Nord America 12.724
EU - Europa 5.025
AS - Asia 1.572
SA - Sud America 12
OC - Oceania 6
Continente sconosciuto - Info sul continente non disponibili 4
Totale 19.343
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Nazione #
US - Stati Uniti d'America 12.588
GB - Regno Unito 2.095
SE - Svezia 710
DE - Germania 601
CN - Cina 512
IT - Italia 468
UA - Ucraina 420
TR - Turchia 356
HK - Hong Kong 318
SG - Singapore 291
FI - Finlandia 251
BG - Bulgaria 158
FR - Francia 142
CA - Canada 136
RU - Federazione Russa 60
IE - Irlanda 45
BE - Belgio 30
IN - India 28
NL - Olanda 16
MY - Malesia 11
TW - Taiwan 11
IL - Israele 10
KR - Corea 10
JP - Giappone 9
BD - Bangladesh 7
BR - Brasile 5
HU - Ungheria 5
CO - Colombia 4
EU - Europa 4
ID - Indonesia 4
AU - Australia 3
DK - Danimarca 3
ES - Italia 3
NZ - Nuova Zelanda 3
RO - Romania 3
AT - Austria 2
BA - Bosnia-Erzegovina 2
CH - Svizzera 2
GR - Grecia 2
PE - Perù 2
PH - Filippine 2
AR - Argentina 1
CZ - Repubblica Ceca 1
IR - Iran 1
JO - Giordania 1
LV - Lettonia 1
ME - Montenegro 1
MT - Malta 1
NO - Norvegia 1
RS - Serbia 1
SI - Slovenia 1
VN - Vietnam 1
Totale 19.343
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Città #
Fairfield 1.747
Southend 1.614
Woodbridge 1.295
Chandler 1.080
Houston 1.009
Jacksonville 960
Ashburn 886
Ann Arbor 701
Dearborn 674
Seattle 623
Cambridge 585
Wilmington 581
Nyköping 359
Hong Kong 315
Izmir 263
Des Moines 262
Beijing 184
Singapore 180
Modena 171
San Diego 171
Princeton 161
Sofia 158
Eugene 156
Munich 107
Montréal 92
Mcallen 91
Helsinki 90
Grafing 56
Boardman 51
Milan 49
New York 48
London 46
Dublin 45
Bremen 38
Redwood City 38
Brussels 29
Nanjing 26
Norwalk 26
Toronto 25
Kunming 24
Hefei 23
Verona 21
Shanghai 19
Chicago 17
Padova 17
Ottawa 16
Auburn Hills 15
Guangzhou 14
Indiana 14
Rome 14
Saint Petersburg 13
Jinan 12
Nanchang 12
Pune 12
Shenyang 11
Taipei 10
Philadelphia 9
Bologna 8
Cagliari 8
Wuhan 8
Acton 7
Hounslow 7
Kilburn 7
Los Angeles 7
Mountain View 7
Duncan 6
Hanover 6
San Mateo 6
Turin 6
Budapest 5
Chiswick 5
Fuzhou 5
Islington 5
Parma 5
Prescot 5
Trento 5
Xian 5
Chengdu 4
Hebei 4
Jiaxing 4
San Francisco 4
Tokyo 4
Venlo 4
Wandsworth 4
Amsterdam 3
Bengaluru 3
Bra 3
Cavriago 3
Changsha 3
Dallas 3
Dresden 3
Golden 3
Jakarta 3
Mola di Bari 3
Nanning 3
Novosibirsk 3
Phoenix 3
Rho 3
Segrate 3
São Paulo 3
Totale 15.464
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Nome #
The Correlation Resistance for Low-Frequency Noise Compact Modeling of Si/SiGe HBT's 583
Experimental and Numerical Analysis of Hole Emission Process from Carbon-Related Traps in GaN Buffer Layers 235
Reliability in automotive electronics: a case study applied to diesel engine control 199
False surface-trap signatures induced by buffer traps in AlGaN-GaN HEMTs 180
Field plate related reliability improvements in GaN-on-Si HEMTs 180
Study of GaN HEMTs electrical degradation by means of numerical simulations 178
Experimental and simulated dc degradation of GaN HEMTs by means of gate-drain and gate-source reverse bias stress 173
Appunti di Microelettronica 172
Failure Analysis-assisted FMEA 170
Correlation between DC and rf degradation due to deep levels in AlGaN/GaN HEMTs 170
An Investigation of the Electrical Degradation of GaN High-Electron-Mobility Transistors by Numerical Simulations of DC Characteristics and Scattering Parameters 169
Physical investigation of high-field degradation mechanisms in GaN/AlGaN/GaN hemts 167
Analysis of GaN HEMT Failure Mechanisms During DC and Large-Signal RF Operation 166
Degradation based long-term reliability assessment for electronic components in submarine applications 166
Impact of field-plate geometry on the reliability of GaN-on-SiC HEMTs 166
Reliability evaluation of plastic packaged devices for long life applications by THB test 161
Failure analysis of RuO2 thick film chip resistors 159
Sulfur-contamination of high power white LED 158
Analysis of current collapse effect in AlGaN/GaN HEMT: experiments and numerical simulations 157
Failure mechanisms in compound semiconductor electron devices 152
Metal-GaAs interaction and contact degradation in microwave MESFETs 152
Correlation between dynamic Rdson transients and Carbon related buffer traps in AlGaN/GaN HEMTs 152
Electromigration in thin-film interconnection lines: models, methods and results 151
Pulsed current stress of Berillium doped AlGaAs/GaAs HBTs 151
On the short and long term degradation of GaInP/GaAs heterojunction bipolar transistors 148
Design and screening of highly reliable 980nm pump lasers 148
Low-temperature spectrally resolved cathodoluminescence study of degradation in opto-electronic and microelectronic devices 148
Investigation of High-Electric-Field Degradation Effects in AlGaN/GaN HEMTs 147
Reliability problems in TTL-LS devices 146
A percolative simulation of electromigration phenomena 145
A comparison between normally and highly accelerated electromigration tests 145
Correlation between light emission and currents in pseudomorphic HEMTs 144
On the use of matrix algebra for the description of EPROM failures 143
Observation of latch-up phenomena in CMOS IC's by means of Digital Differential Voltage Contrast 143
High electric field induced degradation of the DC characteristics in Si/SiGe HEMT's 143
A proposal for a standard procedure for moderately accelerated electromigration tests on metal lines 143
Reliability predictions in electronic industrial applications 142
Anodic Gold corrosion in plastic encapsulated devices 142
Interdiffusion and compound formation in the c-Si/PtSi/(Ti-W)/Al system 142
Degradation mechanisms induced by high current density in Al-gate GaAs MESFETs 142
The effect of hot electron stress on the DC and microwave characteristics of AlGaAs/InGaAs/GaAs PHEMTS 142
Electrical properties and thermal stability of MBE-grown Al/AlxGa1-xAs/Al(0.25)Ga(0.75)As Schottky barriers 141
On the effects of hot electrons on the DC and RF characteristics of lattice-matched InAlAs/InGaAs/InP HEMT's 141
Are high resolution resistometric methods really useful for early detection of electromigration damage? 141
Characterization and analysis of trap-related effects in AlGaN/GaN HEMTs 139
Thermal characterisation of IGBT power modules 138
The effect of Hot Electron Stress on the DC and Microwave Characteristics of GaAs-PHEMTs and InP-HEMTs 138
Failure modes induced in TTL-LS bipolar logics by negative inputs 138
Investigation of the Hot-Carrier Degradation in Si/SiGe HBT’s by Intrinsic Low Frequency Noise Source Modeling 137
Increase in barrier height of Al/n-GaAs contacts induced by high current 137
Reliability physics of compound semiconductor transistors for microwave applications 137
A percolative approach to electromigration in metallic lines 137
A Single-Chip 5GHz WLAN Transmitter in 0.35um Si/SiGe BiCMOS Technology 137
Early Variations of the Base Current in In/C-doped GaInP/GaAs HBT's 136
A Foveated Retina-Like Sensor Using CCD Technology 135
Electromigration testing of integrated circuit interconnections 135
Reliability problems with VLSI 135
Investigation of information loss mechanisms in EPROMs 133
A stochastic approach to failure analysis in electromigration phenomena 132
Cathodoluminescence evidence of stress-induced outdiffusion of beryllium in AlGaAs/GaAs heterojunction bipolar transistors 132
A study of hot electron degradation effects in pseudomorphic HEMTs 132
Bipolar Schottky logic device failure modes due to contact metallurgical degradation 132
EPROM testing - part II: application to 16K N-channel devices 131
On the validity of resistometric technique in electromigration studies of narrow stripes 131
Evaluation of the hot carrier/ionizing radiation induced effects on the RF characteristics of low-complexity SiGe heterojunction bipolar transistors by numerical simulation 131
VLSI Reliability: Contributions from a Three Year National Research Program 130
Evaluation of current density distribution in MESFET gates 130
Electrical degradation of n-Si/PtSi/(Ti-W)/Al Schottky contacts induced by thermal treatments 130
Influence of interface states at Schottky junction on the large signal behaviour of Cu-gate standard AlGaN/GaN HEMTs 130
Activation energy in the early stage of electromigration in Al-1%Si/TiN/Ti bamboo lines 129
On the ASTM electromigration test structure applied to Al-1%Si/TiN/Ti bamboo metal lines 128
A Retinal CCD Sensor for Fast 2D Shape Recognition and Tracking 128
Reliability of GaAs MESFETs 128
Hot electron degradation of the DC and RF characteristics of AlGaAs/InGaAs/GaAs PHEMT’s. 127
Degradation mechanisms induced by temperature in power MESFETs 126
Dynamic thermal characterization and modeling of packaged AlGaAs/GaAs HBT's 126
Breakdown walkout in pseudomorphic HEMT's 124
Bias Dependent, Compact Low-Frequency Noise Model of GaInP/GaAs HBT: Experimental Identification and CAD Implementation 124
Design and Simulation of a Test Pattern for Three-Dimensional Latch-up Analysis 123
Electromigration effects in power MESFET rectifying and ohmic contacts 122
Mechanisms of RF Current Collapse in AlGaN–GaN High Electron Mobility Transistors 122
Electrical and thermal simulation of local effects for electromigration 121
Hot Carrier Effects in Si/SiGe HBT's 121
Potential of Digital Differential Voltage Contrast for the observation of latch-up phenomena in CMOS ICs. 119
EPROM testing - part I: theoretical considerations 119
Influence of surface recombination on the burn-in effect in microwave GaInP/GaAs HBT's 118
On the effect of power cycling stress on IGBT modules 118
Electromigration in Thin-Films for Microelectronics 117
Reliability of compound semiconductor devices 117
Design of field-plated InP-based HEMTs 116
Reliability investigation of InGaP/GaAs HBTs under current and temperature stress 116
The thermally balanced bridge technique (TBBT): a new high resolution resistometric measurement technique for the study of electromigration-induced early resistance changes in metal stripes 116
Very high temperature test of InP-based Laser Diodes 116
Negative Vbe shift due to base dopant outdiffusion in DHBT 116
Biased resistor network model for electromigration failure and related phenomena in metallic lines 116
Drawbacks to using NIST electromigration test structures to test bamboo metal lines 116
Enhancement and Degradation of Drain Current in Pseudomorphic AlGaAs/InGaAs HEMT's Induced by Hot-Electrons. 114
Investigation of the role of compositional effects on electromigration damage of metallic interconnects 113
Gate metallization 'sinking' into the active channel in Ti/W/Au metallized power MESFET's 113
Effects of surface and buffer traps in passivated AlGaN/GaN HEMTs 111
Totale 14.416
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Categoria #
all - tutte 74.423
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 74.423
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/20203.847 0 0 197 319 442 609 769 393 401 161 279 277
2020/20213.140 300 154 283 235 407 227 277 390 192 395 133 147
2021/20222.779 37 401 370 164 74 125 215 130 242 284 413 324
2022/20232.681 321 270 172 222 270 615 43 293 313 18 88 56
2023/20241.309 53 89 119 158 357 83 55 220 44 24 1 106
2024/2025306 258 44 4 0 0 0 0 0 0 0 0 0
Totale 19.447