FANTINI, Fausto
 Distribuzione geografica
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Continente #
NA - Nord America 20.787
AS - Asia 7.761
EU - Europa 6.635
SA - Sud America 951
Continente sconosciuto - Info sul continente non disponibili 113
AF - Africa 98
OC - Oceania 11
Totale 36.356
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Nazione #
US - Stati Uniti d'America 20.357
GB - Regno Unito 2.503
CN - Cina 2.462
SG - Singapore 2.191
HK - Hong Kong 1.073
IT - Italia 854
BR - Brasile 767
SE - Svezia 744
DE - Germania 697
VN - Vietnam 690
UA - Ucraina 446
TR - Turchia 381
FR - Francia 327
FI - Finlandia 311
KR - Corea 307
RU - Federazione Russa 307
CA - Canada 266
BG - Bulgaria 165
IN - India 132
BD - Bangladesh 125
AR - Argentina 68
IQ - Iraq 51
IE - Irlanda 49
MX - Messico 48
NL - Olanda 41
ES - Italia 35
JP - Giappone 34
PH - Filippine 33
PK - Pakistan 33
BE - Belgio 32
CR - Costa Rica 30
ZA - Sudafrica 30
CO - Colombia 29
IL - Israele 27
ID - Indonesia 26
TW - Taiwan 25
EC - Ecuador 24
AE - Emirati Arabi Uniti 22
PL - Polonia 22
VE - Venezuela 20
MY - Malesia 18
JO - Giordania 17
SA - Arabia Saudita 16
CL - Cile 15
HN - Honduras 14
MA - Marocco 14
JM - Giamaica 13
UZ - Uzbekistan 13
KE - Kenya 12
TH - Thailandia 12
AT - Austria 11
GT - Guatemala 11
NP - Nepal 11
TN - Tunisia 11
PE - Perù 10
PR - Porto Rico 10
EG - Egitto 9
NI - Nicaragua 9
AZ - Azerbaigian 8
BH - Bahrain 8
LT - Lituania 8
RO - Romania 8
UY - Uruguay 8
DZ - Algeria 7
EE - Estonia 7
HU - Ungheria 7
IR - Iran 7
NZ - Nuova Zelanda 7
AL - Albania 6
SK - Slovacchia (Repubblica Slovacca) 6
SV - El Salvador 6
BA - Bosnia-Erzegovina 5
CH - Svizzera 5
DK - Danimarca 5
KZ - Kazakistan 5
PS - Palestinian Territory 5
PY - Paraguay 5
AU - Australia 4
BB - Barbados 4
BO - Bolivia 4
EU - Europa 4
GR - Grecia 4
PT - Portogallo 4
RS - Serbia 4
SC - Seychelles 4
BY - Bielorussia 3
CW - ???statistics.table.value.countryCode.CW??? 3
CY - Cipro 3
DO - Repubblica Dominicana 3
LB - Libano 3
OM - Oman 3
SN - Senegal 3
TT - Trinidad e Tobago 3
AM - Armenia 2
BS - Bahamas 2
CI - Costa d'Avorio 2
CZ - Repubblica Ceca 2
GE - Georgia 2
GP - Guadalupe 2
HR - Croazia 2
Totale 36.203
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Città #
Ashburn 2.357
Fairfield 1.747
Santa Clara 1.681
Southend 1.614
Singapore 1.336
Woodbridge 1.295
Hefei 1.106
Chandler 1.080
Hong Kong 1.058
Houston 1.024
Jacksonville 968
San Jose 793
Council Bluffs 716
Ann Arbor 701
Dearborn 674
Seattle 640
Wilmington 597
Cambridge 586
London 371
Nyköping 359
Beijing 325
Seoul 280
Izmir 264
Des Moines 263
Los Angeles 232
Ho Chi Minh City 205
Hanoi 185
Modena 183
Chicago 177
San Diego 172
The Dalles 171
Princeton 170
Sofia 161
Milan 158
Eugene 156
Helsinki 148
Lauterbourg 132
New York 123
Munich 117
Buffalo 106
Moscow 99
São Paulo 99
Montréal 92
Mcallen 91
Dallas 88
Kent 82
Shanghai 80
Norfolk 62
Toronto 57
Boardman 56
Grafing 56
Salt Lake City 52
Dublin 48
Rome 41
Bremen 38
Redwood City 38
Phoenix 37
Columbus 35
Frankfurt am Main 34
Guangzhou 33
Miano 33
Atlanta 32
Brussels 31
Elk Grove Village 30
Da Nang 29
Kunming 29
Orem 29
Tampa 29
Haiphong 27
Norwalk 27
Philadelphia 27
Brooklyn 26
Nanjing 26
Washington 25
North Bergen 24
Rio de Janeiro 24
Baghdad 23
Belo Horizonte 23
San José 22
Verona 22
Falkenstein 20
Padova 20
Tokyo 20
Wuhan 19
Miami 18
Ottawa 18
San Francisco 18
Brantford 17
Boston 16
Denver 16
Mumbai 16
Shenyang 16
Auburn Hills 15
Cagliari 15
Charlotte 15
Jinan 15
Las Vegas 15
Pune 15
Chennai 14
Dulles 14
Totale 26.519
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Nome #
The Correlation Resistance for Low-Frequency Noise Compact Modeling of Si/SiGe HBT's 703
Experimental and Numerical Analysis of Hole Emission Process from Carbon-Related Traps in GaN Buffer Layers 374
Reliability in automotive electronics: a case study applied to diesel engine control 373
Appunti di Microelettronica 357
Analysis of GaN HEMT Failure Mechanisms During DC and Large-Signal RF Operation 337
False surface-trap signatures induced by buffer traps in AlGaN-GaN HEMTs 335
Characterization and analysis of trap-related effects in AlGaN/GaN HEMTs 320
Investigation of the hot-carrier degradation in Si/SiGe HBT's by intrinsic low frequency noise source modeling 318
Investigation of High-Electric-Field Degradation Effects in AlGaN/GaN HEMTs 312
Experimental and simulated dc degradation of GaN HEMTs by means of gate-drain and gate-source reverse bias stress 311
Analysis of current collapse effect in AlGaN/GaN HEMT: experiments and numerical simulations 310
Failure Analysis-assisted FMEA 305
An Investigation of the Electrical Degradation of GaN High-Electron-Mobility Transistors by Numerical Simulations of DC Characteristics and Scattering Parameters 305
Anodic Gold corrosion in plastic encapsulated devices 299
Field plate related reliability improvements in GaN-on-Si HEMTs 297
A Foveated Retina-Like Sensor Using CCD Technology 295
A comparison between normally and highly accelerated electromigration tests 293
A proposal for a standard procedure for moderately accelerated electromigration tests on metal lines 293
Correlation between DC and rf degradation due to deep levels in AlGaN/GaN HEMTs 291
Impact of field-plate geometry on the reliability of GaN-on-SiC HEMTs 287
Mechanisms of RF Current Collapse in AlGaN–GaN High Electron Mobility Transistors 286
Study of GaN HEMTs electrical degradation by means of numerical simulations 286
A percolative simulation of electromigration phenomena 283
A Single-Chip 5GHz WLAN Transmitter in 0.35um Si/SiGe BiCMOS Technology 281
Reliability physics of compound semiconductor transistors for microwave applications 280
Correlation between dynamic Rdson transients and Carbon related buffer traps in AlGaN/GaN HEMTs 278
High electric field induced degradation of the DC characteristics in Si/SiGe HEMT's 277
Activation energy in the early stage of electromigration in Al-1%Si/TiN/Ti bamboo lines 276
On the short and long term degradation of GaInP/GaAs heterojunction bipolar transistors 275
Analysis of High-Electric-Field Degradation in AlGaN/GaN HEMTs 272
Low-temperature spectrally resolved cathodoluminescence study of degradation in opto-electronic and microelectronic devices 270
Failure mechanisms in compound semiconductor electron devices 269
A stochastic approach to failure analysis in electromigration phenomena 268
Electromigration testing of integrated circuit interconnections 266
Degradation based long-term reliability assessment for electronic components in submarine applications 266
Physical investigation of high-field degradation mechanisms in GaN/AlGaN/GaN hemts 265
Correlation between light emission and currents in pseudomorphic HEMTs 264
Thermal characterisation of IGBT power modules 264
Metal-GaAs interaction and contact degradation in microwave MESFETs 264
A Retinal CCD Sensor for Fast 2D Shape Recognition and Tracking 264
Design and screening of highly reliable 980nm pump lasers 263
Reliability evaluation of plastic packaged devices for long life applications by THB test 263
A percolative approach to electromigration in metallic lines 263
Interdiffusion and compound formation in the c-Si/PtSi/(Ti-W)/Al system 261
Affidabilità e fisica dei guasti nei circuiti integrati in silicio 261
On the use of matrix algebra for the description of EPROM failures 258
Failure analysis of RuO2 thick film chip resistors 258
Influence of interface states at Schottky junction on the large signal behaviour of Cu-gate standard AlGaN/GaN HEMTs 257
Reliability predictions in electronic industrial applications 256
A SEM based system for a complete characterisation of latch-up in CMOS integrated circuits 256
Cathodoluminescence evidence of stress-induced outdiffusion of beryllium in AlGaAs/GaAs heterojunction bipolar transistors 256
Observation of latch-up phenomena in CMOS IC's by means of Digital Differential Voltage Contrast 255
Electromigration in thin-film interconnection lines: models, methods and results 255
Degradation mechanisms induced by high current density in Al-gate GaAs MESFETs 254
Bias Dependent, Compact Low-Frequency Noise Model of GaInP/GaAs HBT: Experimental Identification and CAD Implementation 252
On the effects of hot electrons on the DC and RF characteristics of lattice-matched InAlAs/InGaAs/InP HEMT's 250
EPROM testing - part II: application to 16K N-channel devices 248
Investigation of information loss mechanisms in EPROMs 247
Sulfur-contamination of high power white LED 246
Reliability investigation of InGaP/GaAs HBTs under current and temperature stress 245
On the effect of power cycling stress on IGBT modules 245
Increase in barrier height of Al/n-GaAs contacts induced by high current 244
VLSI Reliability: Contributions from a Three Year National Research Program 244
Design of field-plated InP-based HEMTs 243
Reliability of GaAs MESFETs 243
Dynamic thermal characterization and modeling of packaged AlGaAs/GaAs HBT's 243
Evaluation of current density distribution in MESFET gates 241
Enhancement and Degradation of Drain Current in Pseudomorphic AlGaAs/InGaAs HEMT's Induced by Hot-Electrons. 241
Evaluation of the hot carrier/ionizing radiation induced effects on the RF characteristics of low-complexity SiGe heterojunction bipolar transistors by numerical simulation 241
Influence of surface recombination on the burn-in effect in microwave GaInP/GaAs HBT's 240
Breakdown walkout in pseudomorphic HEMT's 239
Study of high-field degradation phenomena in GaN-capped AlGaN/GaN HEMTs 239
Design of RFIC's in 0.35um Si/SiGe BiCMOS Technology for a 5GHz Domotic Transmitter 238
Pulsed current stress of Berillium doped AlGaAs/GaAs HBTs 238
The effect of Hot Electron Stress on the DC and Microwave Characteristics of GaAs-PHEMTs and InP-HEMTs 237
Analysis of hot electron degradation in pseudomorphic HEMTs by DCTS and LF noise characterisation 236
Electrical properties and thermal stability of MBE-grown Al/AlxGa1-xAs/Al(0.25)Ga(0.75)As Schottky barriers 236
GaAs MESFET technology and reliability aspects. 236
Electromigration effects in power MESFET rectifying and ohmic contacts 233
Power GaAs MESFET: reliability aspects and failure mechanisms 233
A study of hot electron degradation effects in pseudomorphic HEMTs 233
Are high resolution resistometric methods really useful for early detection of electromigration damage? 233
On the ASTM electromigration test structure applied to Al-1%Si/TiN/Ti bamboo metal lines 231
The effect of hot electron stress on the DC and microwave characteristics of AlGaAs/InGaAs/GaAs PHEMTS 231
Reliability problems in TTL-LS devices 230
Influence of RF drive and switching frequency on degradation mechanisms in GaN HEMTs 229
Electromigration in Thin-Films for Microelectronics 228
Negative Vbe shift due to base dopant outdiffusion in DHBT 228
Bipolar Schottky logic device failure modes due to contact metallurgical degradation 228
Hot electron degradation of the DC and RF characteristics of AlGaAs/InGaAs/GaAs PHEMT’s. 224
Failure modes induced in TTL-LS bipolar logics by negative inputs 223
High base current ideality factors due to trap-assisted band-to-band tunneling in AlGaAs/GaAs HBTs 222
Early Variations of the Base Current in In/C-doped GaInP/GaAs HBT's 220
Very high temperature test of InP-based Laser Diodes 219
The thermally balanced bridge technique (TBBT): a new high resolution resistometric measurement technique for the study of electromigration-induced early resistance changes in metal stripes 218
The low frequency noise in electron devices: an engineering sight 217
Low Noise, Low Interference Automated Bias Networks for Low Frequency Noise Characterization Set-Up's 213
Degradation mechanisms induced by temperature in power MESFETs 213
Electrical and thermal simulation of local effects for electromigration 212
Reliability of compound semiconductor devices 211
Totale 26.526
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Categoria #
all - tutte 133.517
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 133.517
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/20221.807 0 0 0 0 74 125 215 130 242 284 413 324
2022/20232.681 321 270 172 222 270 615 43 293 313 18 88 56
2023/20241.309 53 89 119 158 357 83 55 220 44 24 1 106
2024/20255.617 258 44 44 309 1.140 686 368 355 624 136 679 974
2025/20267.973 533 648 870 825 726 840 795 420 766 826 401 323
2026/20273.625 379 509 1.160 1.474 103 0 0 0 0 0 0 0
Totale 36.356