FANTINI, Fausto
 Distribuzione geografica
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Continente #
NA - Nord America 13.487
EU - Europa 5.058
AS - Asia 1.878
SA - Sud America 12
OC - Oceania 6
Continente sconosciuto - Info sul continente non disponibili 4
Totale 20.445
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Nazione #
US - Stati Uniti d'America 13.350
GB - Regno Unito 2.098
SE - Svezia 714
DE - Germania 601
CN - Cina 583
SG - Singapore 514
IT - Italia 481
UA - Ucraina 420
TR - Turchia 356
HK - Hong Kong 319
FI - Finlandia 251
BG - Bulgaria 158
FR - Francia 142
CA - Canada 137
RU - Federazione Russa 63
IE - Irlanda 45
IN - India 35
BE - Belgio 31
NL - Olanda 17
MY - Malesia 12
TW - Taiwan 12
IL - Israele 10
KR - Corea 10
JP - Giappone 9
BD - Bangladesh 7
ES - Italia 6
BR - Brasile 5
HU - Ungheria 5
RO - Romania 5
CH - Svizzera 4
CO - Colombia 4
EU - Europa 4
ID - Indonesia 4
AU - Australia 3
DK - Danimarca 3
IR - Iran 3
NZ - Nuova Zelanda 3
AT - Austria 2
BA - Bosnia-Erzegovina 2
GR - Grecia 2
PE - Perù 2
PH - Filippine 2
AR - Argentina 1
CZ - Repubblica Ceca 1
JO - Giordania 1
LT - Lituania 1
LV - Lettonia 1
ME - Montenegro 1
MT - Malta 1
NO - Norvegia 1
RS - Serbia 1
SI - Slovenia 1
VN - Vietnam 1
Totale 20.445
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Città #
Fairfield 1.747
Southend 1.614
Woodbridge 1.295
Chandler 1.080
Houston 1.009
Jacksonville 960
Ashburn 898
Santa Clara 707
Ann Arbor 701
Dearborn 674
Seattle 623
Cambridge 585
Wilmington 581
Singapore 399
Nyköping 359
Hong Kong 315
Izmir 263
Des Moines 262
Beijing 184
Modena 171
San Diego 171
Princeton 161
Sofia 158
Eugene 156
Munich 107
Montréal 92
Mcallen 91
Helsinki 90
Grafing 56
Milan 53
Boardman 51
New York 48
London 47
Dublin 45
Bremen 38
Redwood City 38
Brussels 30
Nanjing 26
Norwalk 26
Toronto 25
Kunming 24
Hefei 23
Shanghai 21
Verona 21
Padova 18
Chicago 17
Ottawa 17
Auburn Hills 15
Guangzhou 15
Indiana 14
Rome 14
Saint Petersburg 13
Jinan 12
Nanchang 12
Pune 12
Shenyang 11
Taipei 10
Philadelphia 9
Wuhan 9
Bengaluru 8
Bologna 8
Cagliari 8
Los Angeles 8
Acton 7
Hounslow 7
Kilburn 7
Mountain View 7
Duncan 6
Hanover 6
San Mateo 6
Turin 6
Budapest 5
Chiswick 5
Fuzhou 5
Islington 5
Parma 5
Prescot 5
Trento 5
Xian 5
Chengdu 4
Hebei 4
Jiaxing 4
San Francisco 4
Sassari 4
Tokyo 4
Venlo 4
Wandsworth 4
Amsterdam 3
Bra 3
Cavriago 3
Changsha 3
Córdoba 3
Dallas 3
Dresden 3
Golden 3
Jakarta 3
Lausanne 3
Mola di Bari 3
Nanning 3
Novosibirsk 3
Totale 16.418
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Nome #
The Correlation Resistance for Low-Frequency Noise Compact Modeling of Si/SiGe HBT's 588
Experimental and Numerical Analysis of Hole Emission Process from Carbon-Related Traps in GaN Buffer Layers 243
Reliability in automotive electronics: a case study applied to diesel engine control 215
Field plate related reliability improvements in GaN-on-Si HEMTs 191
False surface-trap signatures induced by buffer traps in AlGaN-GaN HEMTs 188
Appunti di Microelettronica 187
Study of GaN HEMTs electrical degradation by means of numerical simulations 187
Experimental and simulated dc degradation of GaN HEMTs by means of gate-drain and gate-source reverse bias stress 182
Correlation between DC and rf degradation due to deep levels in AlGaN/GaN HEMTs 180
Failure Analysis-assisted FMEA 179
An Investigation of the Electrical Degradation of GaN High-Electron-Mobility Transistors by Numerical Simulations of DC Characteristics and Scattering Parameters 178
Analysis of GaN HEMT Failure Mechanisms During DC and Large-Signal RF Operation 175
Physical investigation of high-field degradation mechanisms in GaN/AlGaN/GaN hemts 175
Impact of field-plate geometry on the reliability of GaN-on-SiC HEMTs 174
Degradation based long-term reliability assessment for electronic components in submarine applications 173
Analysis of current collapse effect in AlGaN/GaN HEMT: experiments and numerical simulations 170
Reliability evaluation of plastic packaged devices for long life applications by THB test 167
Failure analysis of RuO2 thick film chip resistors 167
Sulfur-contamination of high power white LED 165
Pulsed current stress of Berillium doped AlGaAs/GaAs HBTs 161
Metal-GaAs interaction and contact degradation in microwave MESFETs 160
Failure mechanisms in compound semiconductor electron devices 159
Correlation between dynamic Rdson transients and Carbon related buffer traps in AlGaN/GaN HEMTs 158
Electromigration in thin-film interconnection lines: models, methods and results 156
Design and screening of highly reliable 980nm pump lasers 155
A comparison between normally and highly accelerated electromigration tests 155
Low-temperature spectrally resolved cathodoluminescence study of degradation in opto-electronic and microelectronic devices 155
Investigation of High-Electric-Field Degradation Effects in AlGaN/GaN HEMTs 155
On the short and long term degradation of GaInP/GaAs heterojunction bipolar transistors 154
A percolative simulation of electromigration phenomena 153
Reliability problems in TTL-LS devices 153
Anodic Gold corrosion in plastic encapsulated devices 152
Observation of latch-up phenomena in CMOS IC's by means of Digital Differential Voltage Contrast 152
Correlation between light emission and currents in pseudomorphic HEMTs 151
High electric field induced degradation of the DC characteristics in Si/SiGe HEMT's 151
A proposal for a standard procedure for moderately accelerated electromigration tests on metal lines 151
On the use of matrix algebra for the description of EPROM failures 150
A Foveated Retina-Like Sensor Using CCD Technology 150
Are high resolution resistometric methods really useful for early detection of electromigration damage? 150
Interdiffusion and compound formation in the c-Si/PtSi/(Ti-W)/Al system 149
Reliability predictions in electronic industrial applications 148
Degradation mechanisms induced by high current density in Al-gate GaAs MESFETs 148
The effect of hot electron stress on the DC and microwave characteristics of AlGaAs/InGaAs/GaAs PHEMTS 148
Electrical properties and thermal stability of MBE-grown Al/AlxGa1-xAs/Al(0.25)Ga(0.75)As Schottky barriers 147
Characterization and analysis of trap-related effects in AlGaN/GaN HEMTs 147
On the effects of hot electrons on the DC and RF characteristics of lattice-matched InAlAs/InGaAs/InP HEMT's 147
A Single-Chip 5GHz WLAN Transmitter in 0.35um Si/SiGe BiCMOS Technology 147
A percolative approach to electromigration in metallic lines 146
Failure modes induced in TTL-LS bipolar logics by negative inputs 145
Investigation of the Hot-Carrier Degradation in Si/SiGe HBT’s by Intrinsic Low Frequency Noise Source Modeling 144
Reliability physics of compound semiconductor transistors for microwave applications 144
The effect of Hot Electron Stress on the DC and Microwave Characteristics of GaAs-PHEMTs and InP-HEMTs 144
Thermal characterisation of IGBT power modules 143
Increase in barrier height of Al/n-GaAs contacts induced by high current 143
Electromigration testing of integrated circuit interconnections 143
Early Variations of the Base Current in In/C-doped GaInP/GaAs HBT's 142
A stochastic approach to failure analysis in electromigration phenomena 141
A study of hot electron degradation effects in pseudomorphic HEMTs 141
EPROM testing - part II: application to 16K N-channel devices 140
Investigation of information loss mechanisms in EPROMs 140
Cathodoluminescence evidence of stress-induced outdiffusion of beryllium in AlGaAs/GaAs heterojunction bipolar transistors 140
Bipolar Schottky logic device failure modes due to contact metallurgical degradation 140
Reliability problems with VLSI 140
Activation energy in the early stage of electromigration in Al-1%Si/TiN/Ti bamboo lines 139
On the validity of resistometric technique in electromigration studies of narrow stripes 139
Influence of interface states at Schottky junction on the large signal behaviour of Cu-gate standard AlGaN/GaN HEMTs 139
Evaluation of the hot carrier/ionizing radiation induced effects on the RF characteristics of low-complexity SiGe heterojunction bipolar transistors by numerical simulation 139
Electrical degradation of n-Si/PtSi/(Ti-W)/Al Schottky contacts induced by thermal treatments 137
VLSI Reliability: Contributions from a Three Year National Research Program 136
A Retinal CCD Sensor for Fast 2D Shape Recognition and Tracking 136
Evaluation of current density distribution in MESFET gates 135
Dynamic thermal characterization and modeling of packaged AlGaAs/GaAs HBT's 135
Breakdown walkout in pseudomorphic HEMT's 134
On the ASTM electromigration test structure applied to Al-1%Si/TiN/Ti bamboo metal lines 134
Reliability of GaAs MESFETs 134
Hot electron degradation of the DC and RF characteristics of AlGaAs/InGaAs/GaAs PHEMT’s. 134
Degradation mechanisms induced by temperature in power MESFETs 132
Mechanisms of RF Current Collapse in AlGaN–GaN High Electron Mobility Transistors 132
Bias Dependent, Compact Low-Frequency Noise Model of GaInP/GaAs HBT: Experimental Identification and CAD Implementation 132
Hot Carrier Effects in Si/SiGe HBT's 131
Design and Simulation of a Test Pattern for Three-Dimensional Latch-up Analysis 130
Electromigration effects in power MESFET rectifying and ohmic contacts 128
Electrical and thermal simulation of local effects for electromigration 128
Influence of surface recombination on the burn-in effect in microwave GaInP/GaAs HBT's 126
Potential of Digital Differential Voltage Contrast for the observation of latch-up phenomena in CMOS ICs. 126
Design of field-plated InP-based HEMTs 125
On the effect of power cycling stress on IGBT modules 125
Very high temperature test of InP-based Laser Diodes 124
EPROM testing - part I: theoretical considerations 124
Reliability investigation of InGaP/GaAs HBTs under current and temperature stress 123
Reliability of compound semiconductor devices 123
Negative Vbe shift due to base dopant outdiffusion in DHBT 123
Biased resistor network model for electromigration failure and related phenomena in metallic lines 123
Electromigration in Thin-Films for Microelectronics 122
Drawbacks to using NIST electromigration test structures to test bamboo metal lines 122
The thermally balanced bridge technique (TBBT): a new high resolution resistometric measurement technique for the study of electromigration-induced early resistance changes in metal stripes 121
Enhancement and Degradation of Drain Current in Pseudomorphic AlGaAs/InGaAs HEMT's Induced by Hot-Electrons. 121
Effects of surface and buffer traps in passivated AlGaN/GaN HEMTs 121
Gate metallization 'sinking' into the active channel in Ti/W/Au metallized power MESFET's 120
Study of high-field degradation phenomena in GaN-capped AlGaN/GaN HEMTs 118
Totale 15.193
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Categoria #
all - tutte 78.898
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 78.898
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/20203.331 0 0 0 0 442 609 769 393 401 161 279 277
2020/20213.140 300 154 283 235 407 227 277 390 192 395 133 147
2021/20222.779 37 401 370 164 74 125 215 130 242 284 413 324
2022/20232.681 321 270 172 222 270 615 43 293 313 18 88 56
2023/20241.309 53 89 119 158 357 83 55 220 44 24 1 106
2024/20251.408 258 44 44 309 753 0 0 0 0 0 0 0
Totale 20.549