FANTINI, Fausto
 Distribuzione geografica
Continente #
NA - Nord America 12.682
EU - Europa 5.077
AS - Asia 1.234
SA - Sud America 12
OC - Oceania 6
Continente sconosciuto - Info sul continente non disponibili 4
Totale 19.015
Nazione #
US - Stati Uniti d'America 12.546
GB - Regno Unito 2.123
SE - Svezia 710
DE - Germania 598
CN - Cina 463
IT - Italia 447
UA - Ucraina 420
TR - Turchia 356
HK - Hong Kong 318
FI - Finlandia 247
BG - Bulgaria 158
CA - Canada 136
FR - Francia 133
BE - Belgio 78
RU - Federazione Russa 60
IE - Irlanda 57
IN - India 24
NL - Olanda 16
MY - Malesia 11
TW - Taiwan 11
IL - Israele 10
KR - Corea 10
JP - Giappone 9
SG - Singapore 8
BD - Bangladesh 7
BR - Brasile 5
HU - Ungheria 5
CO - Colombia 4
EU - Europa 4
AU - Australia 3
DK - Danimarca 3
ES - Italia 3
NZ - Nuova Zelanda 3
RO - Romania 3
AT - Austria 2
BA - Bosnia-Erzegovina 2
CH - Svizzera 2
CZ - Repubblica Ceca 2
GR - Grecia 2
ID - Indonesia 2
PE - Perù 2
PH - Filippine 2
AR - Argentina 1
IR - Iran 1
JO - Giordania 1
LV - Lettonia 1
ME - Montenegro 1
MT - Malta 1
NO - Norvegia 1
RS - Serbia 1
SI - Slovenia 1
VN - Vietnam 1
Totale 19.015
Città #
Fairfield 1.747
Southend 1.614
Woodbridge 1.295
Chandler 1.080
Houston 1.009
Jacksonville 960
Ashburn 878
Ann Arbor 701
Dearborn 674
Seattle 623
Cambridge 585
Wilmington 581
Nyköping 359
Hong Kong 315
Izmir 263
Des Moines 262
Beijing 176
Modena 171
San Diego 171
Princeton 161
Sofia 158
Eugene 156
Munich 106
Montréal 92
Mcallen 91
Helsinki 87
Brussels 77
Dublin 57
London 57
Grafing 56
New York 48
Milan 41
Bremen 38
Redwood City 38
Boardman 32
Nanjing 26
Norwalk 26
Toronto 25
Kunming 24
Hefei 23
Verona 21
Padova 17
Ottawa 16
Auburn Hills 15
Indiana 14
Philadelphia 14
Rome 14
Saint Petersburg 13
Shanghai 13
Nanchang 12
Jinan 11
Shenyang 11
Pune 10
Taipei 10
Guangzhou 9
Prescot 9
Acton 8
Bologna 8
Cagliari 8
Chiswick 8
Hounslow 8
Islington 7
Kilburn 7
Los Angeles 7
Mountain View 7
Duncan 6
Hanover 6
San Mateo 6
Turin 6
Wuhan 6
Budapest 5
Fuzhou 5
Parma 5
Trento 5
Xian 5
Chengdu 4
Hebei 4
San Francisco 4
Tokyo 4
Venlo 4
Wandsworth 4
Amsterdam 3
Bengaluru 3
Cavriago 3
Changsha 3
Dresden 3
Golden 3
Nanning 3
New Bedfont 3
Novosibirsk 3
Rho 3
Segrate 3
São Paulo 3
Taizhou 3
Wenzhou 3
Alfianello 2
Atlanta 2
Auckland 2
Augusta 2
Bartlesville 2
Totale 15.291
Nome #
The Correlation Resistance for Low-Frequency Noise Compact Modeling of Si/SiGe HBT's 579
Experimental and Numerical Analysis of Hole Emission Process from Carbon-Related Traps in GaN Buffer Layers 230
Reliability in automotive electronics: a case study applied to diesel engine control 182
False surface-trap signatures induced by buffer traps in AlGaN-GaN HEMTs 179
Study of GaN HEMTs electrical degradation by means of numerical simulations 178
Field plate related reliability improvements in GaN-on-Si HEMTs 177
Experimental and simulated dc degradation of GaN HEMTs by means of gate-drain and gate-source reverse bias stress 171
Failure Analysis-assisted FMEA 170
An Investigation of the Electrical Degradation of GaN High-Electron-Mobility Transistors by Numerical Simulations of DC Characteristics and Scattering Parameters 169
Correlation between DC and rf degradation due to deep levels in AlGaN/GaN HEMTs 169
Analysis of GaN HEMT Failure Mechanisms During DC and Large-Signal RF Operation 165
Physical investigation of high-field degradation mechanisms in GaN/AlGaN/GaN hemts 163
Impact of field-plate geometry on the reliability of GaN-on-SiC HEMTs 162
Degradation based long-term reliability assessment for electronic components in submarine applications 160
Reliability evaluation of plastic packaged devices for long life applications by THB test 158
Appunti di Microelettronica 157
Failure analysis of RuO2 thick film chip resistors 157
Sulfur-contamination of high power white LED 156
Analysis of current collapse effect in AlGaN/GaN HEMT: experiments and numerical simulations 154
Metal-GaAs interaction and contact degradation in microwave MESFETs 150
Electromigration in thin-film interconnection lines: models, methods and results 150
Pulsed current stress of Berillium doped AlGaAs/GaAs HBTs 150
Correlation between dynamic Rdson transients and Carbon related buffer traps in AlGaN/GaN HEMTs 149
On the short and long term degradation of GaInP/GaAs heterojunction bipolar transistors 147
Failure mechanisms in compound semiconductor electron devices 147
Design and screening of highly reliable 980nm pump lasers 147
Low-temperature spectrally resolved cathodoluminescence study of degradation in opto-electronic and microelectronic devices 147
A percolative simulation of electromigration phenomena 146
Reliability problems in TTL-LS devices 145
A comparison between normally and highly accelerated electromigration tests 144
Investigation of High-Electric-Field Degradation Effects in AlGaN/GaN HEMTs 143
On the use of matrix algebra for the description of EPROM failures 141
Correlation between light emission and currents in pseudomorphic HEMTs 141
Observation of latch-up phenomena in CMOS IC's by means of Digital Differential Voltage Contrast 141
On the effects of hot electrons on the DC and RF characteristics of lattice-matched InAlAs/InGaAs/InP HEMT's 141
A proposal for a standard procedure for moderately accelerated electromigration tests on metal lines 141
The effect of hot electron stress on the DC and microwave characteristics of AlGaAs/InGaAs/GaAs PHEMTS 141
Interdiffusion and compound formation in the c-Si/PtSi/(Ti-W)/Al system 140
High electric field induced degradation of the DC characteristics in Si/SiGe HEMT's 140
Anodic Gold corrosion in plastic encapsulated devices 139
Electrical properties and thermal stability of MBE-grown Al/AlxGa1-xAs/Al(0.25)Ga(0.75)As Schottky barriers 139
Degradation mechanisms induced by high current density in Al-gate GaAs MESFETs 139
The effect of Hot Electron Stress on the DC and Microwave Characteristics of GaAs-PHEMTs and InP-HEMTs 139
Are high resolution resistometric methods really useful for early detection of electromigration damage? 139
Thermal characterisation of IGBT power modules 138
Reliability predictions in electronic industrial applications 137
A Single-Chip 5GHz WLAN Transmitter in 0.35um Si/SiGe BiCMOS Technology 137
Failure modes induced in TTL-LS bipolar logics by negative inputs 137
Electromigration testing of integrated circuit interconnections 136
Early Variations of the Base Current in In/C-doped GaInP/GaAs HBT's 136
Investigation of the Hot-Carrier Degradation in Si/SiGe HBT’s by Intrinsic Low Frequency Noise Source Modeling 135
Increase in barrier height of Al/n-GaAs contacts induced by high current 135
Characterization and analysis of trap-related effects in AlGaN/GaN HEMTs 135
A Foveated Retina-Like Sensor Using CCD Technology 134
A percolative approach to electromigration in metallic lines 134
Reliability physics of compound semiconductor transistors for microwave applications 133
Investigation of information loss mechanisms in EPROMs 132
Reliability problems with VLSI 132
Evaluation of current density distribution in MESFET gates 131
A study of hot electron degradation effects in pseudomorphic HEMTs 131
Influence of interface states at Schottky junction on the large signal behaviour of Cu-gate standard AlGaN/GaN HEMTs 130
Evaluation of the hot carrier/ionizing radiation induced effects on the RF characteristics of low-complexity SiGe heterojunction bipolar transistors by numerical simulation 130
Bipolar Schottky logic device failure modes due to contact metallurgical degradation 130
A stochastic approach to failure analysis in electromigration phenomena 129
EPROM testing - part II: application to 16K N-channel devices 129
VLSI Reliability: Contributions from a Three Year National Research Program 129
Electrical degradation of n-Si/PtSi/(Ti-W)/Al Schottky contacts induced by thermal treatments 129
Cathodoluminescence evidence of stress-induced outdiffusion of beryllium in AlGaAs/GaAs heterojunction bipolar transistors 128
On the validity of resistometric technique in electromigration studies of narrow stripes 128
A Retinal CCD Sensor for Fast 2D Shape Recognition and Tracking 127
On the ASTM electromigration test structure applied to Al-1%Si/TiN/Ti bamboo metal lines 126
Activation energy in the early stage of electromigration in Al-1%Si/TiN/Ti bamboo lines 126
Reliability of GaAs MESFETs 126
Hot electron degradation of the DC and RF characteristics of AlGaAs/InGaAs/GaAs PHEMT’s. 126
Dynamic thermal characterization and modeling of packaged AlGaAs/GaAs HBT's 124
Breakdown walkout in pseudomorphic HEMT's 123
Design and Simulation of a Test Pattern for Three-Dimensional Latch-up Analysis 123
Degradation mechanisms induced by temperature in power MESFETs 122
Bias Dependent, Compact Low-Frequency Noise Model of GaInP/GaAs HBT: Experimental Identification and CAD Implementation 122
Electromigration effects in power MESFET rectifying and ohmic contacts 121
Mechanisms of RF Current Collapse in AlGaN–GaN High Electron Mobility Transistors 121
Electrical and thermal simulation of local effects for electromigration 120
On the effect of power cycling stress on IGBT modules 118
Hot Carrier Effects in Si/SiGe HBT's 118
Reliability of compound semiconductor devices 117
Influence of surface recombination on the burn-in effect in microwave GaInP/GaAs HBT's 117
Biased resistor network model for electromigration failure and related phenomena in metallic lines 117
Potential of Digital Differential Voltage Contrast for the observation of latch-up phenomena in CMOS ICs. 117
Electromigration in Thin-Films for Microelectronics 116
Negative Vbe shift due to base dopant outdiffusion in DHBT 116
EPROM testing - part I: theoretical considerations 116
The thermally balanced bridge technique (TBBT): a new high resolution resistometric measurement technique for the study of electromigration-induced early resistance changes in metal stripes 115
Very high temperature test of InP-based Laser Diodes 115
Reliability investigation of InGaP/GaAs HBTs under current and temperature stress 114
Enhancement and Degradation of Drain Current in Pseudomorphic AlGaAs/InGaAs HEMT's Induced by Hot-Electrons. 114
Drawbacks to using NIST electromigration test structures to test bamboo metal lines 114
Design of field-plated InP-based HEMTs 113
Gate metallization 'sinking' into the active channel in Ti/W/Au metallized power MESFET's 112
Investigation of the role of compositional effects on electromigration damage of metallic interconnects 111
Power GaAs MESFET: reliability aspects and failure mechanisms 109
Totale 14.213
Categoria #
all - tutte 65.397
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 65.397


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2018/20191.649 0 0 0 0 0 0 0 0 53 243 687 666
2019/20204.545 294 404 197 319 442 609 769 393 401 161 279 277
2020/20213.140 300 154 283 235 407 227 277 390 192 395 133 147
2021/20222.779 37 401 370 164 74 125 215 130 242 284 413 324
2022/20232.729 321 270 172 222 270 615 47 298 330 22 99 63
2023/20241.239 57 104 127 166 383 83 55 220 44 0 0 0
Totale 19.119