In this chapter, we review the main failure mechanisms that affect advanced compound semiconductor electron devices such as high electron mobility transistors (HEMTs) and heterostructure bipolar transistors (HBTs).
Failure mechanisms in compound semiconductor electron devices / Fantini, F., R., M., Borgarino, M., L., C., D., D. - In: Semiconductor Devices / HARI SINGH NALWA. - STAMPA. - SAN DIEGO : Academic Press, 2001. - ISBN 0125137524. - pp. 155-170
Failure mechanisms in compound semiconductor electron devices
FANTINI, Fausto;BORGARINO, Mattia;
2001
Abstract
In this chapter, we review the main failure mechanisms that affect advanced compound semiconductor electron devices such as high electron mobility transistors (HEMTs) and heterostructure bipolar transistors (HBTs).
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