Both gate and source/drain electromigration are significant failure mechanisms in power MESFTs. The correlation between electromigration effects due to high current density and measured electrical degradation is investigated in devices of different technologies. A safety zone of operation for ohmic contact electromigration is defined.

Electromigration effects in power MESFET rectifying and ohmic contacts / C., Canali; F., Chiussi; Fantini, Fausto; L., Umena; M., Vanzi. - In: ELECTRONICS LETTERS. - ISSN 0013-5194. - STAMPA. - 23:(1987), pp. 364-365.

Electromigration effects in power MESFET rectifying and ohmic contacts

FANTINI, Fausto;
1987

Abstract

Both gate and source/drain electromigration are significant failure mechanisms in power MESFTs. The correlation between electromigration effects due to high current density and measured electrical degradation is investigated in devices of different technologies. A safety zone of operation for ohmic contact electromigration is defined.
23
364
365
Electromigration effects in power MESFET rectifying and ohmic contacts / C., Canali; F., Chiussi; Fantini, Fausto; L., Umena; M., Vanzi. - In: ELECTRONICS LETTERS. - ISSN 0013-5194. - STAMPA. - 23:(1987), pp. 364-365.
C., Canali; F., Chiussi; Fantini, Fausto; L., Umena; M., Vanzi
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11380/451797
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