Both gate and source/drain electromigration are significant failure mechanisms in power MESFTs. The correlation between electromigration effects due to high current density and measured electrical degradation is investigated in devices of different technologies. A safety zone of operation for ohmic contact electromigration is defined.
Electromigration effects in power MESFET rectifying and ohmic contacts / C., Canali; F., Chiussi; Fantini, Fausto; L., Umena; M., Vanzi. - In: ELECTRONICS LETTERS. - ISSN 0013-5194. - STAMPA. - 23:(1987), pp. 364-365.
Electromigration effects in power MESFET rectifying and ohmic contacts
FANTINI, Fausto;
1987
Abstract
Both gate and source/drain electromigration are significant failure mechanisms in power MESFTs. The correlation between electromigration effects due to high current density and measured electrical degradation is investigated in devices of different technologies. A safety zone of operation for ohmic contact electromigration is defined.
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