Experimental results of Gold metallization failures in semiconductor devices due to the corrosion of Gold in the absence of a complexing medium or contaminants are reported. In particular, we show the corrosion of anodically biased lines which was observed on unpassivated plastic encapsulated high-frequency transistors and on passivated linear integrated circuits operating at 85°C, 85% R.H., for a few thousend hours.
Anodic Gold corrosion in plastic encapsulated devices / Brambilla, E.; Brambilla, P.; Canali, C.; Fantini, Fausto; Vanzi, M.. - In: MICROELECTRONICS RELIABILITY. - ISSN 0026-2714. - STAMPA. - 23:(1983), pp. 577-583.
Anodic Gold corrosion in plastic encapsulated devices
FANTINI, Fausto;
1983
Abstract
Experimental results of Gold metallization failures in semiconductor devices due to the corrosion of Gold in the absence of a complexing medium or contaminants are reported. In particular, we show the corrosion of anodically biased lines which was observed on unpassivated plastic encapsulated high-frequency transistors and on passivated linear integrated circuits operating at 85°C, 85% R.H., for a few thousend hours.
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