The effects of the Al mole fraction of a thin (4 nm) AlxGa1-xAs cap on the barrier height and the thermal stability of Al/AlxGa1-xAs/Al0.25 Ga0.75As Schottky barriers prepared in situ by MBE have been investigated. The behaviour of the barrier heights and the ideality factors of diodes after annealing up to 435°C are studied

Electrical properties and thermal stability of MBE-grown Al/AlxGa1-xAs/Al(0.25)Ga(0.75)As Schottky barriers / A., Bosacchi; S., Franchi; E., Gombia; R., Mosca; Fantini, Fausto; R., Menozzi; S., Naccarella. - In: ELECTRONICS LETTERS. - ISSN 0013-5194. - STAMPA. - 30:(1994), pp. 820-822.

Electrical properties and thermal stability of MBE-grown Al/AlxGa1-xAs/Al(0.25)Ga(0.75)As Schottky barriers

FANTINI, Fausto;
1994

Abstract

The effects of the Al mole fraction of a thin (4 nm) AlxGa1-xAs cap on the barrier height and the thermal stability of Al/AlxGa1-xAs/Al0.25 Ga0.75As Schottky barriers prepared in situ by MBE have been investigated. The behaviour of the barrier heights and the ideality factors of diodes after annealing up to 435°C are studied
30
820
822
Electrical properties and thermal stability of MBE-grown Al/AlxGa1-xAs/Al(0.25)Ga(0.75)As Schottky barriers / A., Bosacchi; S., Franchi; E., Gombia; R., Mosca; Fantini, Fausto; R., Menozzi; S., Naccarella. - In: ELECTRONICS LETTERS. - ISSN 0013-5194. - STAMPA. - 30:(1994), pp. 820-822.
A., Bosacchi; S., Franchi; E., Gombia; R., Mosca; Fantini, Fausto; R., Menozzi; S., Naccarella
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11380/451782
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