High-electric-field degradation phenomena are investigated in GaN-capped AlGaN-GaN HEMTs by comparing experimental data with numerical device simulations. Simulations indicate that the stress-induced amplification of gate-lag effects and the correlated gate-leakage-current reduction can be ascribed to the generation of acceptor traps at the gate-drain surface. The drop in DC drain current observed after stress should rather be attributed to trap accumulation within the GaN buffer region. Only the simultaneous generation of surface and buffer traps can account for all of the observed degradation modes. © 2006 JEDEC.
Physical investigation of high-field degradation mechanisms in GaN/AlGaN/GaN hemts / Faqir, Mustapha; Chini, Alessandro; Verzellesi, Giovanni; Fantini, Fausto; Rampazzo, F.; Meneghesso, G.; Zanoni, E.; Bernat, J.; Kordos, P.. - STAMPA. - (2006), pp. 25-31. (Intervento presentato al convegno 2006 ROCS Workshop - Reliability of Compound Semiconductors tenutosi a San Antonio, TX, USA nel 2006) [10.1109/ROCS.2006.323400].
Physical investigation of high-field degradation mechanisms in GaN/AlGaN/GaN hemts
FAQIR, Mustapha;CHINI, Alessandro;VERZELLESI, Giovanni;FANTINI, Fausto;
2006
Abstract
High-electric-field degradation phenomena are investigated in GaN-capped AlGaN-GaN HEMTs by comparing experimental data with numerical device simulations. Simulations indicate that the stress-induced amplification of gate-lag effects and the correlated gate-leakage-current reduction can be ascribed to the generation of acceptor traps at the gate-drain surface. The drop in DC drain current observed after stress should rather be attributed to trap accumulation within the GaN buffer region. Only the simultaneous generation of surface and buffer traps can account for all of the observed degradation modes. © 2006 JEDEC.
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