The work reports on hot electron reliability of 0.25 micron Al(0.25)Ga(0.75)As/In(0.2)Ga(0.8)As/GaAs PHEMTs from the viewpoint of both DC and RF characteristics.
The effect of hot electron stress on the DC and microwave characteristics of AlGaAs/InGaAs/GaAs PHEMTS / R., Menozzi; Borgarino, Mattia; P., Cova; Y., Baeyens; Fantini, Fausto. - In: MICROELECTRONICS RELIABILITY. - ISSN 0026-2714. - STAMPA. - 36:(1996), pp. 1899-1902.
The effect of hot electron stress on the DC and microwave characteristics of AlGaAs/InGaAs/GaAs PHEMTS
BORGARINO, Mattia;FANTINI, Fausto
1996
Abstract
The work reports on hot electron reliability of 0.25 micron Al(0.25)Ga(0.75)As/In(0.2)Ga(0.8)As/GaAs PHEMTs from the viewpoint of both DC and RF characteristics.
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