Resistance degradation of thin film conductors is studied within a stochastic approach based on a random resistor network. Both defect generation and recovery are considered and assumed to depend on the stressing current. The main features of available experiments are well reproduced thus providing a unified interpretation of degradation processes and failure in terms of physical parameters. (C) 1999 Elsevier Science Ltd. All rights reserved.

A stochastic approach to failure analysis in electromigration phenomena / C., Pennetta; L., Reggiani; G., Trefan; Fantini, Fausto; I., Demunari; A., Scorzoni. - In: MICROELECTRONICS RELIABILITY. - ISSN 0026-2714. - STAMPA. - 39:(1999), pp. 857-862.

A stochastic approach to failure analysis in electromigration phenomena

FANTINI, Fausto;
1999

Abstract

Resistance degradation of thin film conductors is studied within a stochastic approach based on a random resistor network. Both defect generation and recovery are considered and assumed to depend on the stressing current. The main features of available experiments are well reproduced thus providing a unified interpretation of degradation processes and failure in terms of physical parameters. (C) 1999 Elsevier Science Ltd. All rights reserved.
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A stochastic approach to failure analysis in electromigration phenomena / C., Pennetta; L., Reggiani; G., Trefan; Fantini, Fausto; I., Demunari; A., Scorzoni. - In: MICROELECTRONICS RELIABILITY. - ISSN 0026-2714. - STAMPA. - 39:(1999), pp. 857-862.
C., Pennetta; L., Reggiani; G., Trefan; Fantini, Fausto; I., Demunari; A., Scorzoni
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11380/303903
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