The measurement of the correlation between the noise generators is a mandatory issue for the low-frequency noise modeling of bipolar transistors, and it is recognized as a very hard experimental task. In the present work, we introduce the concept of correlation resistance and we demonstrate that it can be usefully employed as a guideline for the low-frequency noise modeling in terms of intrinsic noise sources. As a proof of concept, the investigation technique is applied to submicron, BiCMOS-compatible Si/SiGe heterojunction bipolar transistors. It is pointed out that a satisfactory description of the transistor low-frequency noise behavior can be obtained by taking into account noise sources associated with surface recombination/fluctuation in the extrinsic base region.
The Correlation Resistance for Low-Frequency Noise Compact Modeling of Si/SiGe HBT's / Borgarino, Mattia; L., Bary; D., Vescovi; R., Menozzi; A., Monroy; M., Laurens; R., Plana; Fantini, Fausto; J., Graffeuil. - In: IEEE TRANSACTIONS ON ELECTRON DEVICES. - ISSN 0018-9383. - STAMPA. - 49:5(2002), pp. 863-870. [10.1109/16.998596]
The Correlation Resistance for Low-Frequency Noise Compact Modeling of Si/SiGe HBT's
BORGARINO, Mattia;FANTINI, Fausto;
2002
Abstract
The measurement of the correlation between the noise generators is a mandatory issue for the low-frequency noise modeling of bipolar transistors, and it is recognized as a very hard experimental task. In the present work, we introduce the concept of correlation resistance and we demonstrate that it can be usefully employed as a guideline for the low-frequency noise modeling in terms of intrinsic noise sources. As a proof of concept, the investigation technique is applied to submicron, BiCMOS-compatible Si/SiGe heterojunction bipolar transistors. It is pointed out that a satisfactory description of the transistor low-frequency noise behavior can be obtained by taking into account noise sources associated with surface recombination/fluctuation in the extrinsic base region.
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