The paper presents new data on the reliability of GaAs MESFETs for microwave telecommunications obtained from the analysis of field repairs and accelerated tests. This work represents a systematic investigation of devices in the context of real applications, thus providing a significative contribution to the state of the art in the field.
Reliability of GaAs MESFETs / B., Ricco'; Fantini, Fausto; F., Magistrali; P., Brambilla. - STAMPA. - (1990), pp. 455-469. ((Intervento presentato al convegno NATO ADVANCED RESEARCH WORKSHOP ON SEMICONDUCTOR DEVICE RELIABILITY tenutosi a HERAKLION, GREECE nel JUN 04-09, 1989.
Reliability of GaAs MESFETs
FANTINI, Fausto;
1990
Abstract
The paper presents new data on the reliability of GaAs MESFETs for microwave telecommunications obtained from the analysis of field repairs and accelerated tests. This work represents a systematic investigation of devices in the context of real applications, thus providing a significative contribution to the state of the art in the field.
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