GaN-based high-electron mobility transistors (HEMTs) have received increasing attention for their outstanding performance in RF-power applications [1]–[3]. Gallium nitride’s wide energy gap (3.49eV) and breakdown field (3MV/cm) allow HEMTs to tolerate high voltages and high temperatures, while its higher saturation velocity and the absence of doping atoms in the channel make them very fast switching devices compared to silicon-based ones. However, HEMTs still suffer from reliability problems like current collapse, gate-lag, and RF degradation, to be solved before they can be used for commercial purposes [4]–[5]. In this paper a review of RF and pseudo-RF stress campaigns carried out on GaN HEMTs is presented.

Influence of RF drive and switching frequency on degradation mechanisms in GaN HEMTs / DI LECCE, Valerio; Esposto, Michele; Bonaiuti, Matteo; Fantini, Fausto; Chini, Alessandro; Meneghesso, G.; Zanoni, E.. - (2009). (Intervento presentato al convegno 18th European Workshop on Heterostructure Technology - HETECH 2009 tenutosi a Günzburg / Ulm, Germany nel 2-4 November 2009).

Influence of RF drive and switching frequency on degradation mechanisms in GaN HEMTs

DI LECCE, Valerio;ESPOSTO, Michele;BONAIUTI, Matteo;FANTINI, Fausto;CHINI, Alessandro;
2009

Abstract

GaN-based high-electron mobility transistors (HEMTs) have received increasing attention for their outstanding performance in RF-power applications [1]–[3]. Gallium nitride’s wide energy gap (3.49eV) and breakdown field (3MV/cm) allow HEMTs to tolerate high voltages and high temperatures, while its higher saturation velocity and the absence of doping atoms in the channel make them very fast switching devices compared to silicon-based ones. However, HEMTs still suffer from reliability problems like current collapse, gate-lag, and RF degradation, to be solved before they can be used for commercial purposes [4]–[5]. In this paper a review of RF and pseudo-RF stress campaigns carried out on GaN HEMTs is presented.
2009
18th European Workshop on Heterostructure Technology - HETECH 2009
Günzburg / Ulm, Germany
2-4 November 2009
DI LECCE, Valerio; Esposto, Michele; Bonaiuti, Matteo; Fantini, Fausto; Chini, Alessandro; Meneghesso, G.; Zanoni, E.
Influence of RF drive and switching frequency on degradation mechanisms in GaN HEMTs / DI LECCE, Valerio; Esposto, Michele; Bonaiuti, Matteo; Fantini, Fausto; Chini, Alessandro; Meneghesso, G.; Zanoni, E.. - (2009). (Intervento presentato al convegno 18th European Workshop on Heterostructure Technology - HETECH 2009 tenutosi a Günzburg / Ulm, Germany nel 2-4 November 2009).
File in questo prodotto:
File Dimensione Formato  
Influence of RF drive and switching frequency on degradation mechanisms in GaN HEMTs.pdf

Accesso riservato

Tipologia: Altro
Dimensione 915.26 kB
Formato Adobe PDF
915.26 kB Adobe PDF   Visualizza/Apri   Richiedi una copia
Pubblicazioni consigliate

Licenza Creative Commons
I metadati presenti in IRIS UNIMORE sono rilasciati con licenza Creative Commons CC0 1.0 Universal, mentre i file delle pubblicazioni sono rilasciati con licenza Attribuzione 4.0 Internazionale (CC BY 4.0), salvo diversa indicazione.
In caso di violazione di copyright, contattare Supporto Iris

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11380/623858
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus ND
  • ???jsp.display-item.citation.isi??? ND
social impact