New failure mechanisms induced by hot-electrons in AlGaAs/InGaAs pseudomorphic HEMT's have been identified by means of accelerated testing of commercial devices from four different supplier.
Enhancement and Degradation of Drain Current in Pseudomorphic AlGaAs/InGaAs HEMT's Induced by Hot-Electrons / C., Canali; P., Cova; E., De Bortoli; Fantini, Fausto; G., Meneghesso; R., Menozzi; E., Zanoni. - STAMPA. - (1995), pp. 205-211. (Intervento presentato al convegno International Reliability Physics Symposium tenutosi a Las Vegas nel 4-6 aprile 1995).
Enhancement and Degradation of Drain Current in Pseudomorphic AlGaAs/InGaAs HEMT's Induced by Hot-Electrons.
FANTINI, Fausto;
1995
Abstract
New failure mechanisms induced by hot-electrons in AlGaAs/InGaAs pseudomorphic HEMT's have been identified by means of accelerated testing of commercial devices from four different supplier.
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