The role of carbon-related traps in GaN-based ungated high-electron mobility transistor structures has been investigated both experimentally and by means of numerical simulations. A clear quantitative correlation between the experimental data and numerical simulations has been obtained. The observed current decrease in the tested structure during backgating measurements has been explained simply by means of a thermally activated hole-emission process with E-A = 0.9eV, corresponding to the distance of the acceptor-like hole-Trap level from the GaN valence band. Moreover, it has been demonstrated by means of electrical measurements and numerical simulations that only a low percentage of the nominal carbon doping levels induces the observed current reduction when negative substrate bias is applied to the tested structure.

Experimental and Numerical Analysis of Hole Emission Process from Carbon-Related Traps in GaN Buffer Layers / Chini, Alessandro; Meneghesso, G.; Meneghini, M.; Fantini, Fausto; Verzellesi, Giovanni; Patti, A.; Iucolano, F.. - In: IEEE TRANSACTIONS ON ELECTRON DEVICES. - ISSN 0018-9383. - 63:9(2016), pp. 3473-3478. [10.1109/TED.2016.2593791]

Experimental and Numerical Analysis of Hole Emission Process from Carbon-Related Traps in GaN Buffer Layers

CHINI, Alessandro;FANTINI, Fausto;VERZELLESI, Giovanni;
2016

Abstract

The role of carbon-related traps in GaN-based ungated high-electron mobility transistor structures has been investigated both experimentally and by means of numerical simulations. A clear quantitative correlation between the experimental data and numerical simulations has been obtained. The observed current decrease in the tested structure during backgating measurements has been explained simply by means of a thermally activated hole-emission process with E-A = 0.9eV, corresponding to the distance of the acceptor-like hole-Trap level from the GaN valence band. Moreover, it has been demonstrated by means of electrical measurements and numerical simulations that only a low percentage of the nominal carbon doping levels induces the observed current reduction when negative substrate bias is applied to the tested structure.
2016
63
9
3473
3478
Experimental and Numerical Analysis of Hole Emission Process from Carbon-Related Traps in GaN Buffer Layers / Chini, Alessandro; Meneghesso, G.; Meneghini, M.; Fantini, Fausto; Verzellesi, Giovanni; Patti, A.; Iucolano, F.. - In: IEEE TRANSACTIONS ON ELECTRON DEVICES. - ISSN 0018-9383. - 63:9(2016), pp. 3473-3478. [10.1109/TED.2016.2593791]
Chini, Alessandro; Meneghesso, G.; Meneghini, M.; Fantini, Fausto; Verzellesi, Giovanni; Patti, A.; Iucolano, F.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11380/1112606
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