Experimental and Numerical Analysis of Hole Emission Process from Carbon-Related Traps in GaN Buffer Layers

Chini, Alessandro; Meneghesso, G.; Meneghini, M.; Fantini, Fausto; Verzellesi, Giovanni; Patti, A.; Iucolano, F.

doi:10.1109/TED.2016.2593791

The role of carbon-related traps in GaN-based ungated high-electron mobility transistor structures has been investigated both experimentally and by means of numerical simulations. A clear quantitative correlation between the experimental data and numerical simulations has been obtained. The observed current decrease in the tested structure during backgating measurements has been explained simply by means of a thermally activated hole-emission process with E-A = 0.9eV, corresponding to the distance of the acceptor-like hole-Trap level from the GaN valence band. Moreover, it has been demonstrated by means of electrical measurements and numerical simulations that only a low percentage of the nominal carbon doping levels induces the observed current reduction when negative substrate bias is applied to the tested structure.

Experimental and Numerical Analysis of Hole Emission Process from Carbon-Related Traps in GaN Buffer Layers / CHINI, Alessandro; Meneghesso, G.; Meneghini, M.; FANTINI, Fausto; VERZELLESI, Giovanni; Patti, A.; Iucolano, F.. - In: IEEE TRANSACTIONS ON ELECTRON DEVICES. - ISSN 0018-9383. - 63(9)(2016), pp. 3473-3478.

Data di pubblicazione:	2016
Titolo:	Experimental and Numerical Analysis of Hole Emission Process from Carbon-Related Traps in GaN Buffer Layers
Autore/i:	CHINI, Alessandro; Meneghesso, G.; Meneghini, M.; FANTINI, Fausto; VERZELLESI, Giovanni; Patti, A.; Iucolano, F.
Autore/i UNIMORE:	CHINI, Alessandro Meneghesso, G. Meneghini, M. FANTINI, Fausto VERZELLESI, Giovanni Patti, A. Iucolano, F. mostra contributor esterni nascondi contributor esterni
Digital Object Identifier (DOI):	http://dx.doi.org/10.1109/TED.2016.2593791
Rivista:	IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume:	63(9)
Pagina iniziale:	3473
Pagina finale:	3478
Codice identificativo ISI:	WOS:000384574400015
Codice identificativo Scopus:	2-s2.0-84981738006
Citazione:	Experimental and Numerical Analysis of Hole Emission Process from Carbon-Related Traps in GaN Buffer Layers / CHINI, Alessandro; Meneghesso, G.; Meneghini, M.; FANTINI, Fausto; VERZELLESI, Giovanni; Patti, A.; Iucolano, F.. - In: IEEE TRANSACTIONS ON ELECTRON DEVICES. - ISSN 0018-9383. - 63(9)(2016), pp. 3473-3478.
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http://hdl.handle.net/11380/1112606

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