SEM, microprobe measurements, AES and X-ray diffraction were used to investigate interdiffusion phenomena occurring in the c-Si/PtSi/(Ti-W)/Al system widely used in silicon integrated circuits.
Interdiffusion and compound formation in the c-Si/PtSi/(Ti-W)/Al system / Canali, C.; Celotti, G.; Fantini, Fausto; Zanoni, E.. - In: THIN SOLID FILMS. - ISSN 0040-6090. - STAMPA. - 88:(1982), pp. 9-23.