FANTINI, Fausto
Distribuzione geografica
Continente | # |
---|---|
AS - Asia | 77 |
EU - Europa | 58 |
NA - Nord America | 57 |
AF - Africa | 1 |
OC - Oceania | 1 |
Totale | 194 |
Nazione | # |
---|---|
US - Stati Uniti d'America | 55 |
JP - Giappone | 30 |
IT - Italia | 20 |
CN - Cina | 13 |
IN - India | 10 |
NL - Olanda | 10 |
TW - Taiwan | 10 |
SE - Svezia | 6 |
DE - Germania | 5 |
HK - Hong Kong | 5 |
SG - Singapore | 5 |
AT - Austria | 3 |
FR - Francia | 3 |
PL - Polonia | 3 |
CA - Canada | 2 |
GB - Regno Unito | 2 |
AU - Australia | 1 |
BD - Bangladesh | 1 |
CH - Svizzera | 1 |
CZ - Repubblica Ceca | 1 |
FI - Finlandia | 1 |
IS - Islanda | 1 |
KR - Corea | 1 |
NO - Norvegia | 1 |
PH - Filippine | 1 |
PK - Pakistan | 1 |
RU - Federazione Russa | 1 |
ZA - Sudafrica | 1 |
Totale | 194 |
Città | # |
---|---|
Osaka | 11 |
Fairfield | 10 |
Modena | 10 |
Santa Cruz | 8 |
Tokyo | 7 |
Kaohsiung City | 6 |
Stockholm | 6 |
Beijing | 5 |
Boardman | 4 |
Man Kok | 4 |
Roermond | 4 |
Houston | 3 |
Milan | 3 |
Nanjing | 3 |
Singapore | 3 |
Taipei | 3 |
Villach | 3 |
Albuquerque | 2 |
Ashburn | 2 |
Delhi | 2 |
Elst | 2 |
Kobe | 2 |
Maletto | 2 |
Nijmegen | 2 |
Padova | 2 |
Polska | 2 |
San Diego | 2 |
San Jose | 2 |
Waterloo | 2 |
Woodbridge | 2 |
Akishima | 1 |
Amsterdam | 1 |
Bengaluru | 1 |
Boulder | 1 |
Bremen | 1 |
Buffalo | 1 |
Central | 1 |
Council Bluffs | 1 |
Davao City | 1 |
Denver | 1 |
Des Moines | 1 |
Ekimaedori | 1 |
Frydek-mistek | 1 |
Gujranwala | 1 |
Helsinki | 1 |
Hiratsuka | 1 |
Huilong | 1 |
Inuyama | 1 |
Jinan | 1 |
Johannesburg | 1 |
Kolkata | 1 |
Lausanne | 1 |
Lillestrøm | 1 |
Los Angeles | 1 |
Mosfellsbaer | 1 |
Nagoya | 1 |
Oakland | 1 |
Oegstgeest | 1 |
Offenbach | 1 |
Paris | 1 |
Pioltello | 1 |
Saint Petersburg | 1 |
Seattle | 1 |
Segrate | 1 |
Shanghai | 1 |
Southend | 1 |
Utsunomiya | 1 |
Warsaw | 1 |
Woking | 1 |
Totale | 158 |
Nome | # |
---|---|
Experimental and Numerical Analysis of Hole Emission Process from Carbon-Related Traps in GaN Buffer Layers, file e31e124e-9894-987f-e053-3705fe0a095a | 130 |
A SEM based system for a complete characterisation of latch-up in CMOS integrated circuits, file e31e124e-1382-987f-e053-3705fe0a095a | 60 |
Influence of interface states at Schottky junction on the large signal behaviour of Cu-gate standard AlGaN/GaN HEMTs, file e31e124b-b8a1-987f-e053-3705fe0a095a | 1 |
Influence of RF drive and switching frequency on degradation mechanisms in GaN HEMTs, file e31e124b-bcd2-987f-e053-3705fe0a095a | 1 |
Study of GaN HEMTs degradation by numerical simulations of scattering parameters, file e31e124b-bfec-987f-e053-3705fe0a095a | 1 |
Correlation between dynamic Rdson transients and Carbon related buffer traps in AlGaN/GaN HEMTs, file e31e124b-e0fa-987f-e053-3705fe0a095a | 1 |
Totale | 194 |
Categoria | # |
---|---|
all - tutte | 553 |
article - articoli | 0 |
book - libri | 0 |
conference - conferenze | 0 |
curatela - curatele | 0 |
other - altro | 0 |
patent - brevetti | 0 |
selected - selezionate | 0 |
volume - volumi | 0 |
Totale | 553 |
Totale | Lug | Ago | Sett | Ott | Nov | Dic | Gen | Feb | Mar | Apr | Mag | Giu | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|
2019/2020 | 2 | 0 | 0 | 0 | 0 | 0 | 0 | 0 | 1 | 1 | 0 | 0 | 0 |
2020/2021 | 4 | 0 | 0 | 1 | 0 | 1 | 2 | 0 | 0 | 0 | 0 | 0 | 0 |
2021/2022 | 61 | 0 | 5 | 2 | 0 | 1 | 0 | 1 | 6 | 20 | 2 | 18 | 6 |
2022/2023 | 76 | 2 | 1 | 6 | 6 | 4 | 16 | 7 | 5 | 8 | 5 | 11 | 5 |
2023/2024 | 47 | 6 | 14 | 10 | 2 | 0 | 6 | 6 | 1 | 1 | 1 | 0 | 0 |
Totale | 194 |