The electromigration phenomenon has been one of the most intriguing physical problems in the semiconductor device reliability. The models to explain the phenomenon are here revised, together with the influence of materials and their microstructure. The various measuring techniques are described, including the design of special test patterns, and statistical data analysis is briefly reviewed.
Electromigration testing of integrated circuit interconnections / Fantini, Fausto; J. R., Lloyd; I., De Munari; A., Scorzoni. - In: MICROELECTRONIC ENGINEERING. - ISSN 0167-9317. - STAMPA. - 40:(1998), pp. 207-221.
Electromigration testing of integrated circuit interconnections
FANTINI, Fausto;
1998
Abstract
The electromigration phenomenon has been one of the most intriguing physical problems in the semiconductor device reliability. The models to explain the phenomenon are here revised, together with the influence of materials and their microstructure. The various measuring techniques are described, including the design of special test patterns, and statistical data analysis is briefly reviewed.
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