The contnuous trend to further I.C. miniaturization implies increased local electric field strength and power dissipation density, and a "perverse scaling" behaviour of metal interconnections and contacts. This will result in new failure mechanisms while old ones, non under control, may become a threat again.Thi work reports on the most relevant results, related to VLSI reliability, obtained by the seven Univeristy Research Yeams involved in a three years Research Program sponsored by the Italian Ministero Pubblica Istruzione.
VLSI Reliability: Contributions from a Three Year National Research Program / G., S., C., C., E., Z., F., C., A., D., Fantini, F., V. A., M., G., M., C., M.. - In: EUROPEAN TRANSACTIONS ON TELECOMMUNICATIONS AND RELATED TECHNOLOGIES. - ISSN 1120-3862. - STAMPA. - 1:(1990), pp. 127-138. [10.1002/ett.4460010221]
VLSI Reliability: Contributions from a Three Year National Research Program
FANTINI, Fausto;
1990
Abstract
The contnuous trend to further I.C. miniaturization implies increased local electric field strength and power dissipation density, and a "perverse scaling" behaviour of metal interconnections and contacts. This will result in new failure mechanisms while old ones, non under control, may become a threat again.Thi work reports on the most relevant results, related to VLSI reliability, obtained by the seven Univeristy Research Yeams involved in a three years Research Program sponsored by the Italian Ministero Pubblica Istruzione.
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