The contnuous trend to further I.C. miniaturization implies increased local electric field strength and power dissipation density, and a "perverse scaling" behaviour of metal interconnections and contacts. This will result in new failure mechanisms while old ones, non under control, may become a threat again.Thi work reports on the most relevant results, related to VLSI reliability, obtained by the seven Univeristy Research Yeams involved in a three years Research Program sponsored by the Italian Ministero Pubblica Istruzione.
VLSI Reliability: Contributions from a Three Year National Research Program / G., Soncini; C., Canali; E., Zanoni; F., Corsi; A., Diligenti; Fantini, Fausto; V. A., Monaco; G., Masetti; C., Morandi. - In: EUROPEAN TRANSACTIONS ON TELECOMMUNICATIONS AND RELATED TECHNOLOGIES. - ISSN 1120-3862. - STAMPA. - 1:(1990), pp. 127-138.
VLSI Reliability: Contributions from a Three Year National Research Program
FANTINI, Fausto;
1990
Abstract
The contnuous trend to further I.C. miniaturization implies increased local electric field strength and power dissipation density, and a "perverse scaling" behaviour of metal interconnections and contacts. This will result in new failure mechanisms while old ones, non under control, may become a threat again.Thi work reports on the most relevant results, related to VLSI reliability, obtained by the seven Univeristy Research Yeams involved in a three years Research Program sponsored by the Italian Ministero Pubblica Istruzione.
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