We present a stochastic model which simulates electromigration damage in metallic interconnects by biased percolation of a random resistor network in the presence of degradation and recovery processes. The main features of experiments including Black's law, times to failure distribution, current threshold for the onset of electromigration, etc are properly reproduced. Compositional effects showing up in early resistance changes measured on Al-0.5%Cu and Al-1%Si lines are also studied.
A percolative approach to electromigration in metallic lines / C., Pennetta; L., Reggiani; G., Trefan; Fantini, Fausto; A., Scorzoni; I., De Munari. - In: JOURNAL OF PHYSICS D. APPLIED PHYSICS. - ISSN 0022-3727. - STAMPA. - 34:(2001), pp. 1421-1429. [10.1088/0022-3727/34/9/321]
A percolative approach to electromigration in metallic lines
FANTINI, Fausto;
2001
Abstract
We present a stochastic model which simulates electromigration damage in metallic interconnects by biased percolation of a random resistor network in the presence of degradation and recovery processes. The main features of experiments including Black's law, times to failure distribution, current threshold for the onset of electromigration, etc are properly reproduced. Compositional effects showing up in early resistance changes measured on Al-0.5%Cu and Al-1%Si lines are also studied.
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