The reliability of InGaP/GaAs N-p-n heterojunction bipolar transistors (HBTs) with different base metal contact systems (Au/Zn/Au, Ti/Au, Ti/Pt/Au and the novel Ti/ZrB2/Au) under current and temperature stress is studied in this paper. We further report results of current stress on three p-GaAs doping Impurities namely Zn, Be and C. The effect of O+/H+ and O+/He+ ions, used in the fabrication of planar self-aligned HBTs, is also investigated in the stability of device de current gain, The instability phenomena typical of each factors and their effects on the HBT characteristics are reported. (C) 1999 Elsevier Science Ltd, All rights reserved.
Reliability investigation of InGaP/GaAs HBTs under current and temperature stress / Aa, Rezazadeh; Sa, Bashar; H., Sheng; Fa, Amin; Ah, Khalid; M., Sotoodeh; Ma, Crouch; L., Cattani; Fantini, Fausto; Jj, Liou. - In: MICROELECTRONICS RELIABILITY. - ISSN 0026-2714. - STAMPA. - 39:(1999), pp. 1809-1816.
Reliability investigation of InGaP/GaAs HBTs under current and temperature stress
FANTINI, Fausto;
1999
Abstract
The reliability of InGaP/GaAs N-p-n heterojunction bipolar transistors (HBTs) with different base metal contact systems (Au/Zn/Au, Ti/Au, Ti/Pt/Au and the novel Ti/ZrB2/Au) under current and temperature stress is studied in this paper. We further report results of current stress on three p-GaAs doping Impurities namely Zn, Be and C. The effect of O+/H+ and O+/He+ ions, used in the fabrication of planar self-aligned HBTs, is also investigated in the stability of device de current gain, The instability phenomena typical of each factors and their effects on the HBT characteristics are reported. (C) 1999 Elsevier Science Ltd, All rights reserved.
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