GaN on SiC HEMTs fabricated with different gate-connected field plate structures have been tested by means of RF reliability tests. The increase in field-plate length yielded an improvement of both the dynamic and the reliability performance during RF testing. Results are thus suggesting that reliability in field-plate devices can be improved by a proper design of the field-plate geometry.
Impact of field-plate geometry on the reliability of GaN-on-SiC HEMTs / Chini, Alessandro; Soci, Fabio; Fantini, Fausto; Nanni, A.; Pantellini, A.; Lanzieri, C.; Meneghesso, G.; Zanoni, E.. - In: MICROELECTRONICS RELIABILITY. - ISSN 0026-2714. - STAMPA. - 53:9-11(2013), pp. 1461-1465. [10.1016/j.microrel.2013.07.033]
Impact of field-plate geometry on the reliability of GaN-on-SiC HEMTs
CHINI, Alessandro;SOCI, FABIO;FANTINI, Fausto;
2013
Abstract
GaN on SiC HEMTs fabricated with different gate-connected field plate structures have been tested by means of RF reliability tests. The increase in field-plate length yielded an improvement of both the dynamic and the reliability performance during RF testing. Results are thus suggesting that reliability in field-plate devices can be improved by a proper design of the field-plate geometry.
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