In the framework of the development of a submicron CMOS technology, we investigate the reliability of Al stripes 1.5-8 micron wide and compared the results obtained with various techniques; in particular in this paper the resistometric method is compared with the standard MYF technique for the narrowest stripes.
On the validity of resistometric technique in electromigration studies of narrow stripes / Fantini, Fausto; G., Specchiulli; C., Caprile. - In: THIN SOLID FILMS. - ISSN 0040-6090. - STAMPA. - 72:(1989), pp. L85-L89.
On the validity of resistometric technique in electromigration studies of narrow stripes
FANTINI, Fausto;
1989
Abstract
In the framework of the development of a submicron CMOS technology, we investigate the reliability of Al stripes 1.5-8 micron wide and compared the results obtained with various techniques; in particular in this paper the resistometric method is compared with the standard MYF technique for the narrowest stripes.
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