In the framework of the development of a submicron CMOS technology, we investigate the reliability of Al stripes 1.5-8 micron wide and compared the results obtained with various techniques; in particular in this paper the resistometric method is compared with the standard MYF technique for the narrowest stripes.

On the validity of resistometric technique in electromigration studies of narrow stripes / Fantini, Fausto; G., Specchiulli; C., Caprile. - In: THIN SOLID FILMS. - ISSN 0040-6090. - STAMPA. - 72:(1989), pp. L85-L89.

On the validity of resistometric technique in electromigration studies of narrow stripes

FANTINI, Fausto;
1989

Abstract

In the framework of the development of a submicron CMOS technology, we investigate the reliability of Al stripes 1.5-8 micron wide and compared the results obtained with various techniques; in particular in this paper the resistometric method is compared with the standard MYF technique for the narrowest stripes.
72
L85
L89
On the validity of resistometric technique in electromigration studies of narrow stripes / Fantini, Fausto; G., Specchiulli; C., Caprile. - In: THIN SOLID FILMS. - ISSN 0040-6090. - STAMPA. - 72:(1989), pp. L85-L89.
Fantini, Fausto; G., Specchiulli; C., Caprile
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11380/451795
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