In this paper, we investigate the effects of dc stress on GaN high-electron mobility transistors (HEMTs) by means of numerical simulations. Following stress tests showing a degradation of static characteristics (dc), the formation of an electron trap in the AlGaN barrier layer was related to the observed degradation according to the results obtained from numerical simulations carried out by introducing a trapping region underneath the gate edge. The worsening of the device dc performance is evaluated by changing the extension of the degraded region and the trap concentration while studying the variation of parameters like the saturated drain current IDSS, the output conductance g O, and the device transconductance gM. An increase in the trap concentration induces a worsening of any of the abovementioned parameters; an increase in the extension of the degraded region induces a degradation of IDSS and gM, but can reduce gO.

Study of GaN HEMTs electrical degradation by means of numerical simulations / DI LECCE, Valerio; Esposto, Michele; Bonaiuti, Matteo; Fantini, Fausto; Chini, Alessandro. - (2010), pp. 285-288. (Intervento presentato al convegno 2010 European Solid State Device Research Conference, ESSDERC 2010 tenutosi a Sevilla, Spain nel 14-16 September 2010) [10.1109/ESSDERC.2010.5618358].

Study of GaN HEMTs electrical degradation by means of numerical simulations

DI LECCE, Valerio;ESPOSTO, Michele;BONAIUTI, Matteo;FANTINI, Fausto;CHINI, Alessandro
2010

Abstract

In this paper, we investigate the effects of dc stress on GaN high-electron mobility transistors (HEMTs) by means of numerical simulations. Following stress tests showing a degradation of static characteristics (dc), the formation of an electron trap in the AlGaN barrier layer was related to the observed degradation according to the results obtained from numerical simulations carried out by introducing a trapping region underneath the gate edge. The worsening of the device dc performance is evaluated by changing the extension of the degraded region and the trap concentration while studying the variation of parameters like the saturated drain current IDSS, the output conductance g O, and the device transconductance gM. An increase in the trap concentration induces a worsening of any of the abovementioned parameters; an increase in the extension of the degraded region induces a degradation of IDSS and gM, but can reduce gO.
2010
2010 European Solid State Device Research Conference, ESSDERC 2010
Sevilla, Spain
14-16 September 2010
285
288
DI LECCE, Valerio; Esposto, Michele; Bonaiuti, Matteo; Fantini, Fausto; Chini, Alessandro
Study of GaN HEMTs electrical degradation by means of numerical simulations / DI LECCE, Valerio; Esposto, Michele; Bonaiuti, Matteo; Fantini, Fausto; Chini, Alessandro. - (2010), pp. 285-288. (Intervento presentato al convegno 2010 European Solid State Device Research Conference, ESSDERC 2010 tenutosi a Sevilla, Spain nel 14-16 September 2010) [10.1109/ESSDERC.2010.5618358].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11380/1077874
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