The characterization of the excess low-frequency noise (LFN) properties of electronic devices is a useful tool in the field of reliability physics, because LFN is related to the interactions between charge carriers and material imperfections and defects. The LFN behavior of a bipolar transistor can be described in terms of extrinsic or intrinsic noise sources. The noise representation based on intrinsic noise sources allows more insight, because each source is associated with a particular transistor region. The availability of an intrinsic noise source model therefore allows to locate the degradation occurring during a life test.
Investigation of the Hot-Carrier Degradation in Si/SiGe HBT’s by Intrinsic Low Frequency Noise Source Modeling / Borgarino, Mattia; Kuchenbecker, J.; Tartarin, J. C.; Bary, L.; Kovacic, S.; Plana, R.; Menozzi, R.; Fantini, Fausto; Graffeuil, J.. - STAMPA. - not available:(2001), pp. 15-20. (Intervento presentato al convegno 2001 GaAs Reliability Workshop tenutosi a Baltimora, Maryland (USA) nel 21/10/2001).
Investigation of the Hot-Carrier Degradation in Si/SiGe HBT’s by Intrinsic Low Frequency Noise Source Modeling
BORGARINO, Mattia;FANTINI, Fausto;
2001
Abstract
The characterization of the excess low-frequency noise (LFN) properties of electronic devices is a useful tool in the field of reliability physics, because LFN is related to the interactions between charge carriers and material imperfections and defects. The LFN behavior of a bipolar transistor can be described in terms of extrinsic or intrinsic noise sources. The noise representation based on intrinsic noise sources allows more insight, because each source is associated with a particular transistor region. The availability of an intrinsic noise source model therefore allows to locate the degradation occurring during a life test.
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