In this work we show for the first time evidence of gate-drain breakdown walkout due to hot electrons in pseudomorphic AlGaAs-InGaAs-GaAs HEMTs (PHEMTs). Experiments performed on passivated commercial PHEMTs show that hot electron stress cycles induce a large and permanent increase of the gate-drain breakdown voltage. Three-terminal and two-terminal stress conditions are compared, the former producing a much larger walkout due to hot electrons flowing in the channel. Experimental results indicate that a build-up of negative charge in the region between gate and drain is responsible for the breakdown walkout, due to a local widening of the depletion region and a reduction of the peak electric field

Breakdown walkout in pseudomorphic HEMT's / R., Menozzi; P., Cova; C., Canali; Fantini, Fausto. - In: IEEE TRANSACTIONS ON ELECTRON DEVICES. - ISSN 0018-9383. - STAMPA. - 43:(1996), pp. 543-546.

Breakdown walkout in pseudomorphic HEMT's

FANTINI, Fausto
1996

Abstract

In this work we show for the first time evidence of gate-drain breakdown walkout due to hot electrons in pseudomorphic AlGaAs-InGaAs-GaAs HEMTs (PHEMTs). Experiments performed on passivated commercial PHEMTs show that hot electron stress cycles induce a large and permanent increase of the gate-drain breakdown voltage. Three-terminal and two-terminal stress conditions are compared, the former producing a much larger walkout due to hot electrons flowing in the channel. Experimental results indicate that a build-up of negative charge in the region between gate and drain is responsible for the breakdown walkout, due to a local widening of the depletion region and a reduction of the peak electric field
43
543
546
Breakdown walkout in pseudomorphic HEMT's / R., Menozzi; P., Cova; C., Canali; Fantini, Fausto. - In: IEEE TRANSACTIONS ON ELECTRON DEVICES. - ISSN 0018-9383. - STAMPA. - 43:(1996), pp. 543-546.
R., Menozzi; P., Cova; C., Canali; Fantini, Fausto
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11380/451777
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