The major concern for reliability of Berillium doped HBTs is the diffusion of the base dopant towards the emitter. This degradation can be enhanced by the device self-heating and/or by REID mechanism. In order to separate the thermal and REID components to the Berillium outdiffusion we performed a pulsed current stress on AlGaAs/GaAs HBTs. In this paper we report on results obtained with different values of the duty cycles for this current.

Pulsed current stress of Berillium doped AlGaAs/GaAs HBTs / L., Cattani; Borgarino, Mattia; Fantini, Fausto. - In: MICROELECTRONICS RELIABILITY. - ISSN 0026-2714. - STAMPA. - 38:(1998), pp. 1233-1237.

Pulsed current stress of Berillium doped AlGaAs/GaAs HBTs

BORGARINO, Mattia;FANTINI, Fausto
1998

Abstract

The major concern for reliability of Berillium doped HBTs is the diffusion of the base dopant towards the emitter. This degradation can be enhanced by the device self-heating and/or by REID mechanism. In order to separate the thermal and REID components to the Berillium outdiffusion we performed a pulsed current stress on AlGaAs/GaAs HBTs. In this paper we report on results obtained with different values of the duty cycles for this current.
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Pulsed current stress of Berillium doped AlGaAs/GaAs HBTs / L., Cattani; Borgarino, Mattia; Fantini, Fausto. - In: MICROELECTRONICS RELIABILITY. - ISSN 0026-2714. - STAMPA. - 38:(1998), pp. 1233-1237.
L., Cattani; Borgarino, Mattia; Fantini, Fausto
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11380/612568
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