Commercial pseudomorphic AlGaAs/InGaAs HEMTs designed for low noise operation have demonstrated weak sensitivity to hot electron stress. We have investigated underlying physical mechanisms by LF channel noise analysis and Drain Current Transient Spectroscopy (DCTS).
Analysis of hot electron degradation in pseudomorphic HEMTs by DCTS and LF noise characterisation / N., Labat; N., Saysset; A., Touboul; Y., Danto; P., Cova; Fantini, Fausto. - In: MICROELECTRONICS RELIABILITY. - ISSN 0026-2714. - STAMPA. - 37:(1997), pp. 1675-1678.
Analysis of hot electron degradation in pseudomorphic HEMTs by DCTS and LF noise characterisation
FANTINI, Fausto
1997-01-01
Abstract
Commercial pseudomorphic AlGaAs/InGaAs HEMTs designed for low noise operation have demonstrated weak sensitivity to hot electron stress. We have investigated underlying physical mechanisms by LF channel noise analysis and Drain Current Transient Spectroscopy (DCTS).
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