Influence of interface states at Schottky junction on the large signal behaviour of Cu-gate standard AlGaN/GaN HEMTs

Copper (Cu)-gate AlGaN/GaN High Electron Mobility Transistors have been already proposed by Ao et al. [5] and more recently by Sun et al. [6]. Gate leakage currents, Schottky barrier heights and other small signal parameters have found to be very interesting for Cu-gate devices. The aim of our work is to evaluate the large signal characteristics, giving a direct comparison between Cu-gate device and Ni/Au-gate one.