Two independent failure mechanisms, mainly induced by temperature, were observed in unpassivated, Au-metallised, commercially available power MESFETs. They result in a high gate/source (drain) leakage and in an increase in the open channel resistance, and may explain the burn-out of the devices in practical applications.
Degradation mechanisms induced by temperature in power MESFETs / C., Canali; Fantini, Fausto; L., Umena; E., Zanoni. - In: ELECTRONICS LETTERS. - ISSN 0013-5194. - STAMPA. - 21:(1985), pp. 600-601.
Degradation mechanisms induced by temperature in power MESFETs
FANTINI, Fausto;
1985
Abstract
Two independent failure mechanisms, mainly induced by temperature, were observed in unpassivated, Au-metallised, commercially available power MESFETs. They result in a high gate/source (drain) leakage and in an increase in the open channel resistance, and may explain the burn-out of the devices in practical applications.
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