We report, for the first time, results on the reliability of Si/SiGe HEMT´s. The present work addresses the high electric field stress effects on the DC characteristics. In particular, we report the variations of the output characteristics (drain and gate current), of the transconductance, of the threshold voltage, and of the breakdown voltage. Subsequently, possible degradation mechanisms are presented. The observed variations are discussed in comparison with similar experiments carried out on PHEMT´s issued of the III-V technology. Keywords: HEMT´s, Reliability, SiGe, DC Characteristics
High electric field induced degradation of the DC characteristics in Si/SiGe HEMT's / J., Kuchenbecker; Borgarino, Mattia; M., Zeuner; U., Konig; R., Plana; Fantini, Fausto. - In: MICROELECTRONICS RELIABILITY. - ISSN 0026-2714. - STAMPA. - 43:9-11(2003), pp. 1719-1723. [10.1016/S0026-2714(03)00341-X]
High electric field induced degradation of the DC characteristics in Si/SiGe HEMT's
BORGARINO, Mattia;FANTINI, Fausto
2003
Abstract
We report, for the first time, results on the reliability of Si/SiGe HEMT´s. The present work addresses the high electric field stress effects on the DC characteristics. In particular, we report the variations of the output characteristics (drain and gate current), of the transconductance, of the threshold voltage, and of the breakdown voltage. Subsequently, possible degradation mechanisms are presented. The observed variations are discussed in comparison with similar experiments carried out on PHEMT´s issued of the III-V technology. Keywords: HEMT´s, Reliability, SiGe, DC Characteristics
Pubblicazioni consigliate
I metadati presenti in IRIS UNIMORE sono rilasciati con licenza Creative Commons CC0 1.0 Universal, mentre i file delle pubblicazioni sono rilasciati con licenza Attribuzione 4.0 Internazionale (CC BY 4.0), salvo diversa indicazione.
In caso di violazione di copyright, contattare Supporto Iris
