Traps are characterized in AlGaN-GaN HEMTs by means of DLTS techniques and the associated charge/discharge behavior is interpreted with the aid of numerical device simulations. Under specific bias conditions, buffer traps can produce “false” surface-trap signals, i.e. the same type of current-mode DLTS (I-DLTS) or ICTS signals that are generally attributed to surface traps. Clarifying this aspect is important for both reliability testing and device optimization, as it can lead to erroneous identification of the degradation mechanism, thus resulting in wrong correction actions on the technological process.
Characterization and analysis of trap-related effects in AlGaN/GaN HEMTs / Faqir, Mustapha; Verzellesi, Giovanni; Fantini, Fausto; F., Danesin; F., Rampazzo; G., Meneghesso; E., Zanoni; A., Cavallini; A., Castaldini; N., Labat; A., Touboul; C., Dua. - In: MICROELECTRONICS RELIABILITY. - ISSN 0026-2714. - STAMPA. - 47:9-11(2007), pp. 1639-1642. [10.1016/j.microrel.2007.07.005]
Characterization and analysis of trap-related effects in AlGaN/GaN HEMTs
FAQIR, Mustapha;VERZELLESI, Giovanni;FANTINI, Fausto;
2007
Abstract
Traps are characterized in AlGaN-GaN HEMTs by means of DLTS techniques and the associated charge/discharge behavior is interpreted with the aid of numerical device simulations. Under specific bias conditions, buffer traps can produce “false” surface-trap signals, i.e. the same type of current-mode DLTS (I-DLTS) or ICTS signals that are generally attributed to surface traps. Clarifying this aspect is important for both reliability testing and device optimization, as it can lead to erroneous identification of the degradation mechanism, thus resulting in wrong correction actions on the technological process.
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