An analytical evaluation of the distribution of the current density both along the gate finger and perpendicular to the metal/semiconductor interface in MESFET transistors is reported for the case of forward-biased gate junctions. Examples are given for two gate resistances per unit length to evidence the current crowding effect which appears near the gate pad on increasing the gate resistance.

Evaluation of current density distribution in MESFET gates / A., Scorzoni; C., Canali; Fantini, Fausto; E., Zanoni. - In: ELECTRONICS LETTERS. - ISSN 0013-5194. - STAMPA. - 22:(1986), pp. 512-514.

Evaluation of current density distribution in MESFET gates

FANTINI, Fausto;
1986-01-01

Abstract

An analytical evaluation of the distribution of the current density both along the gate finger and perpendicular to the metal/semiconductor interface in MESFET transistors is reported for the case of forward-biased gate junctions. Examples are given for two gate resistances per unit length to evidence the current crowding effect which appears near the gate pad on increasing the gate resistance.
22
512
514
Evaluation of current density distribution in MESFET gates / A., Scorzoni; C., Canali; Fantini, Fausto; E., Zanoni. - In: ELECTRONICS LETTERS. - ISSN 0013-5194. - STAMPA. - 22:(1986), pp. 512-514.
A., Scorzoni; C., Canali; Fantini, Fausto; E., Zanoni
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11380/451800
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