The effects of surface and buffer traps in passivated AlGaN-GaN HEMT on their pulsed I-V characteristics has been investigated by means of numerical simulations.
Effects of Surface and Buffer Traps in Passivated AlGaN-GaN HEMT / Faqir, Mustapha; Verzellesi, Giovanni; Chini, Alessandro; Fantini, Fausto; Danesin, F.; Rampazzo, F.; Meneghesso, G.; Zanoni, E.; Labat, N.; Touboul, A.; Dua, C.. - (2008). (Intervento presentato al convegno 32nd Workshop on Compound Semiconductor Devices and Integrated Circuits, WOCSDICE 2008 tenutosi a Leuven (Belgium) nel 18-21 May, 2008).
Effects of Surface and Buffer Traps in Passivated AlGaN-GaN HEMT
FAQIR, Mustapha;VERZELLESI, Giovanni;CHINI, Alessandro;FANTINI, Fausto;
2008
Abstract
The effects of surface and buffer traps in passivated AlGaN-GaN HEMT on their pulsed I-V characteristics has been investigated by means of numerical simulations.
Pubblicazioni consigliate
I metadati presenti in IRIS UNIMORE sono rilasciati con licenza Creative Commons CC0 1.0 Universal, mentre i file delle pubblicazioni sono rilasciati con licenza Attribuzione 4.0 Internazionale (CC BY 4.0), salvo diversa indicazione.
In caso di violazione di copyright, contattare Supporto Iris
