PADOVANI, ANDREA
 Distribuzione geografica
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Continente #
NA - Nord America 21.507
AS - Asia 11.040
EU - Europa 8.522
SA - Sud America 1.326
AF - Africa 173
Continente sconosciuto - Info sul continente non disponibili 19
OC - Oceania 13
Totale 42.600
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Nazione #
US - Stati Uniti d'America 21.188
SG - Singapore 3.372
CN - Cina 3.047
GB - Regno Unito 2.078
HK - Hong Kong 1.718
IT - Italia 1.114
PL - Polonia 1.029
BR - Brasile 1.002
VN - Vietnam 981
SE - Svezia 862
DE - Germania 724
KR - Corea 523
RU - Federazione Russa 392
TR - Turchia 375
FI - Finlandia 374
UA - Ucraina 365
FR - Francia 363
IE - Irlanda 300
IN - India 207
NL - Olanda 186
ES - Italia 172
CA - Canada 169
BG - Bulgaria 160
AR - Argentina 124
PT - Portogallo 121
BD - Bangladesh 112
TW - Taiwan 112
JP - Giappone 95
ID - Indonesia 81
MX - Messico 81
IQ - Iraq 69
BE - Belgio 61
AE - Emirati Arabi Uniti 54
CH - Svizzera 54
PK - Pakistan 53
ZA - Sudafrica 53
EC - Ecuador 49
CO - Colombia 37
AT - Austria 32
SA - Arabia Saudita 31
MA - Marocco 29
CL - Cile 28
LU - Lussemburgo 28
VE - Venezuela 24
MY - Malesia 23
PY - Paraguay 21
IR - Iran 20
PH - Filippine 20
CZ - Repubblica Ceca 17
EG - Egitto 17
IL - Israele 16
DZ - Algeria 15
TN - Tunisia 15
EU - Europa 14
GR - Grecia 14
JO - Giordania 14
LT - Lituania 14
UY - Uruguay 14
AZ - Azerbaigian 13
PE - Perù 13
RO - Romania 13
KZ - Kazakistan 12
NP - Nepal 12
AU - Australia 11
BO - Bolivia 11
DO - Repubblica Dominicana 11
JM - Giamaica 11
TH - Thailandia 11
UZ - Uzbekistan 11
BY - Bielorussia 10
KE - Kenya 10
CR - Costa Rica 7
ET - Etiopia 7
OM - Oman 7
TT - Trinidad e Tobago 7
AL - Albania 6
CU - Cuba 6
CY - Cipro 6
MD - Moldavia 6
SN - Senegal 6
AM - Armenia 5
BH - Bahrain 5
HN - Honduras 5
KG - Kirghizistan 5
NI - Nicaragua 5
BB - Barbados 4
EE - Estonia 4
GE - Georgia 4
GT - Guatemala 4
HU - Ungheria 4
NG - Nigeria 4
QA - Qatar 4
CI - Costa d'Avorio 3
DK - Danimarca 3
LK - Sri Lanka 3
LV - Lettonia 3
PA - Panama 3
PS - Palestinian Territory 3
RS - Serbia 3
SI - Slovenia 3
Totale 42.547
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Città #
Fairfield 2.264
Singapore 2.065
Ashburn 1.986
Santa Clara 1.962
Hong Kong 1.691
Woodbridge 1.422
Southend 1.322
Chandler 1.130
Houston 1.068
Warsaw 1.020
Hefei 962
Seattle 908
Ann Arbor 774
San Jose 739
Wilmington 714
Cambridge 693
Jacksonville 652
Nyköping 580
Beijing 508
Dearborn 503
London 474
Chicago 380
Seoul 380
Modena 372
Ho Chi Minh City 299
The Dalles 294
Los Angeles 290
Dublin 279
Hanoi 251
San Diego 239
Helsinki 227
Izmir 226
Council Bluffs 216
Buffalo 206
New York 176
Princeton 171
Sofia 150
Lauterbourg 134
Eugene 124
Milan 115
Moscow 115
Badalona 101
São Paulo 99
Boardman 97
Dallas 90
Shanghai 88
Frankfurt am Main 87
Columbus 82
Munich 81
Salt Lake City 77
Grafing 75
Tokyo 68
East Aurora 65
Redwood City 65
Des Moines 63
Guangzhou 62
Atlanta 57
Da Nang 57
Taipei 55
Orem 51
Amsterdam 50
Bremen 50
Tampa 49
Wuhan 47
Montreal 45
Washington 42
Brooklyn 40
Chennai 40
Haiphong 37
Brantford 36
Delfgauw 36
Bologna 35
Phoenix 35
Redondo Beach 34
Elk Grove Village 33
Jakarta 33
Leesburg 33
Rio de Janeiro 32
Rome 32
Mexico City 31
Toronto 31
Baghdad 28
Dhaka 28
San Francisco 28
Turku 28
Belo Horizonte 26
Poplar 26
Groningen 25
Hangzhou 25
Reggio Emilia 25
Shenzhen 25
Nanjing 24
Denver 23
Mumbai 23
Nuremberg 23
Parma 23
Falls Church 22
Norwalk 22
Boston 21
Brussels 21
Totale 30.768
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Nome #
A Complete Statistical Investigation of RTN in HfO₂-Based RRAM in High Resistive State 751
A Compact Model of Program Window in HfOx RRAM Devices for Conductive Filament Characteristics Analysis 686
A Charge-Trapping Model for the Fast Component of Positive Bias Temperature Instability (PBTI) in High-k Gate-Stacks 605
Leakage current in HfO2 stacks: from physical to compact modeling 483
A HydroDynamic Model for Trap-Assisted Tunneling Conduction in Ovonic Devices 406
Physical Mechanisms behind the Field-Cycling Behavior of HfO2-Based Ferroelectric Capacitors 400
Anomalous random telegraph noise and temporary phenomena in resistive random access memory 374
A microscopic physical description of RTN current fluctuations in HfOx RRAM 374
Random telegraph noise: Measurement, data analysis, and interpretation 368
Recommended Methods to Study Resistive Switching Devices 368
A Compact Model of Hafnium-Oxide-Based Resistive Random Access Memory 366
Comprehensive physical modeling of forming and switching operations in HfO2 RRAM devices 362
Characterization of anomalous Random Telegraph Noise in Resistive Random Access Memory 347
A Comprehensive Understanding of the Erase of TANOS Memories Through Charge Separation Experiments and Simulations 344
Leakage current through the poly-crystalline HfO2: trap densities at grains and grain boundaries 332
Dielectric breakdown of oxide films in electronic devices 331
Charge transport in high-k stacks for charge-trapping memory applications: A modeling perspective (invited) 325
A study on HfO2 RRAM in HRS based on I–V and RTN analysis 317
Progresses in Modeling HfOx RRAM Operations and Variability 312
A study of the leakage current in TiN/HfO2/TiN capacitors 309
Charge Transport and Degradation in HfO2 and HfOx Dielectrics 309
Experimental and Theoretical Study of Electrode Effects in HfO2 based RRAM 307
A Physics-Based Model of the Dielectric Breakdown in HfO2 for Statistical Reliability Prediction 306
Metal oxide resistive memory switching mechanism based on conductive filament properties 306
A novel Algorithm for the Solution of Charge Transport Equations in MANOS Devices Including Charge Trapping in Alumina and Temperature Effects 303
Analysis of interface-trap effects in inversion-type InGaAs/ZrO2 MOSFETs 301
On the RESET-SET transition in Phase Change Memories 299
Bipolar Resistive RAM Based on HfO2: Physics, Compact Modeling, and Variability Control 298
Defect density evaluation in a high-k MOSFET gate stack combining experimental and modeling methods 298
Electrical defect spectroscopy and reliability prediction through a novel simulation-based methodology 296
A Physical Model for Post-Breakdown Digital Gate Current Noise 295
Localized characterization of charge transport and random telegraph noise at the nanoscale in HfO2 films combining scanning tunneling microscopy and multi-scale simulations 295
Evidences for vertical charge dipole formation in charge-trapping memories and its impact on reliability 294
Experimental assessment of electrons and holes in erase transient of TANOS and TANVaS memories 293
Mechanism of high-k dielectric-induced breakdown of interfacial SiO2 layer 292
RTS Noise Characterization of HfOx RRAM in High Resistive State 291
Dielectric Reliability for Future Logic and Non-Volatile Memory Applications: a Statistical Simulation Analysis Approach 288
An Empirical Model for RRAM Resistance in Low- and High-Resistance State 288
Random Telegraph Noise analysis to investigate the properties of active traps of HfO2-Based RRAM in HRS 287
A simulation framework for modeling charge transport and degradation in high-k stacks 286
Analysis of RTN and cycling variability in HfO2 RRAM devices in LRS 285
Grain boundary-driven leakage path formation in HfO2 dielectrics 285
Device‐to‐Materials Pathway for Electron Traps Detection in Amorphous GeSe‐Based Selectors 283
Statistical analysis of random telegraph noise in HfO2-based RRAM devices in LRS 283
Self-rectifying behavior and analog switching under identical pulses using Tri-layer RRAM crossbar array for neuromorphic systems 283
Charge trapping in alumina and its impact on the operation of metal-alumina-nitride-oxide-silicon memories: experiments and simulations 280
Single vacancy defect spectroscopy on HfO2 using random telegraph noise signals from scanning tunneling microscopy 276
A Sensitivity Map-Based Approach to Profile Defects in MIM Capacitors From I-V, C-V, and G-V Measurements 275
A microscopic mechanism of dielectric breakdown in SiO2films: An insight from multi-scale modeling 273
Scaling perspective and reliability of conductive filament formation in ultra-scaled HfO2 Resistive Random Access Memory 272
Hole Distributions in NROM Devices: Profiling Technique and Correlation to Memory Retention 271
Extracting Atomic Defect Properties From Leakage Current Temperature Dependence 271
A Physical model of the temperature dependence of the current through SiO2/HfO2 stacks 270
Investigation of trapping/detrapping mechanisms in Al2O3 electron/hole traps and their influence on TANOS memory operations 270
Perimeter and area current components in HfO2 and HfO2-x metal-insulator-metal capacitors 269
Microscopic Modeling of HfOₓ RRAM Operations: From Forming to Switching 268
Feasibility of SIO2/Al2O3 tunnel dielectric for future Flash memories generations 266
Operations, Charge Transport, and Random Telegraph Noise in HfOx Resistive Random Access Memory: a Multi-scale Modeling Study 266
Connecting electrical and structural dielectric characteristics 266
Multiscale modeling for application-oriented optimization of resistive random-access memory 266
Modeling NAND Flash Memories for IC Design 265
Compact modeling of TANOS program/erase operations for SPICE-like circuit simulations 262
Instability of HfO2 RRAM devices: Comparing RTN and cycling variability 262
Multi-scale modeling of oxygen vacancies assisted charge transport in sub-stoichiometric TiOx for RRAM application 262
Multiscale modeling of electron-ion interactions for engineering novel electronic devices and materials 258
Multiscale modeling of defect-related phenomena in high-k based logic and memory devices 257
Role of Holes and Electrons During Erase of TANOS Memories: Evidences for Dipole Formation and its Impact on Reliability 255
Hole Distributions in Erased NROM Devices: profiling method and effects on reliability 252
Connecting the physical and electrical properties of Hafnia-based RRAM 252
Root cause of degradation in novel HfO2-based ferroelectric memories 251
Microscopic understanding and modeling of HfO2 RRAM device physics 249
Advanced modeling and characterization techniques for innovative memory devices: The RRAM case 248
Threshold Shift Observed in Resistive Switching in Metal-Oxide-Semiconductor Transistors and the Effect of Forming Gas Anneal 247
Monte-Carlo Simulations of Flash Memory Array Retention 247
Cross-correlation of electrical measurements via physics-based device simulations: Linking electrical and structural characteristics 246
Temperature Effects on Metal-Alumina-Nitride-Oxide-Silicon Memory Operations 244
Modeling NAND Flash memories for circuit simulations 242
Metal oxide RRAM switching mechanism based on conductive filament microscopic properties 242
Modeling TANOS Memory Program Transients to Investigate Charge Trapping Dynamics 241
Investigation of the role of electrodes on the retention performance of HfOx based RRAM cells by experiments, atomistic simulations and device physical modeling 241
Random Telegraph Signal Noise Properties of HfOx RRAM in High Resistive States 240
Modeling of the forming operation in HfO2-base resistive switching memories 239
Microscopic Modeling of Electrical Stress -Induced Breakdown in Poly-Crystalline Hafnium Oxide Dielectrics 239
Random telegraph noise (RTN) in scaled RRAM devices 235
Charge loss in TANOS devices caused by Vt sensing measurements during retention 234
Dielectric morphology and RRAM resistive switching characteristics 234
Fundamental reliability issues of advanced charge-trapping Flash memory devices 232
Linking Conductive Filament Properties and Evolution to Synaptic Behavior of RRAM Devices for Neuromorphic Applications 231
A technique to extract high-k IPD stack layer thicknesses from C-V measurements 230
Connecting electrical and structural dielectric characteristics 227
Multiscale modeling of electron-ion interactions for engineering novel electronic device and materials 227
Advanced high-k materials and electrical analysis for memories: the role of SiO2-high-k dielectric intermixing 226
New insights into SILC-based life time extraction 225
Temperature impact (up to 200 °C) on performance and reliability of HfO2-based RRAMs 224
SET switching effects on PCM endurance 223
Leakage Current - Forming Voltage Relation and Oxygen Gettering in HfOx RRAM Devices 222
Physical modeling of charge transport and degradation in HfO 2 stacks for logic device and memory applications 221
Connecting RRAM Performance to the Properties of the Hafnia-based Dielectrics 219
Random telegraph noise in 2D hexagonal boron nitride dielectric films 219
Role of electron and hole trapping in the degradation and breakdown of SiO2 and HfO2 films 216
Totale 29.156
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Categoria #
all - tutte 161.078
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 161.078
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/2021474 0 0 0 0 0 0 0 0 0 0 280 194
2021/20223.246 199 301 330 123 77 278 149 147 324 282 738 298
2022/20233.119 272 382 226 223 363 520 46 326 390 41 165 165
2023/20242.460 122 182 132 283 587 307 178 268 31 64 59 247
2024/20258.176 442 94 98 538 1.337 1.034 640 484 864 348 1.098 1.199
2025/202613.460 925 830 1.167 1.112 1.941 1.848 1.877 697 1.415 1.327 321 0
Totale 42.867