PADOVANI, ANDREA
 Distribuzione geografica
Salva come PNG Salva come JPEG
Continente #
NA - Nord America 22.532
AS - Asia 11.419
EU - Europa 8.767
SA - Sud America 1.328
AF - Africa 175
Continente sconosciuto - Info sul continente non disponibili 19
OC - Oceania 13
Totale 44.253
Salva come PNG Salva come JPEG
Nazione #
US - Stati Uniti d'America 22.168
SG - Singapore 3.384
CN - Cina 3.084
GB - Regno Unito 2.078
HK - Hong Kong 1.725
IT - Italia 1.341
PL - Polonia 1.029
BR - Brasile 1.002
VN - Vietnam 982
SE - Svezia 862
DE - Germania 732
KR - Corea 530
BD - Bangladesh 419
RU - Federazione Russa 392
TR - Turchia 375
FI - Finlandia 374
FR - Francia 366
UA - Ucraina 365
IE - Irlanda 300
IN - India 208
CA - Canada 199
NL - Olanda 187
ES - Italia 172
BG - Bulgaria 160
AR - Argentina 125
PT - Portogallo 121
TW - Taiwan 112
JP - Giappone 96
MX - Messico 84
ID - Indonesia 82
IQ - Iraq 70
BE - Belgio 62
AE - Emirati Arabi Uniti 55
CH - Svizzera 54
PK - Pakistan 53
ZA - Sudafrica 53
EC - Ecuador 49
CO - Colombia 37
AT - Austria 34
SA - Arabia Saudita 31
MA - Marocco 29
CL - Cile 28
LU - Lussemburgo 28
MY - Malesia 25
VE - Venezuela 25
PY - Paraguay 21
IR - Iran 20
PH - Filippine 20
EG - Egitto 19
CZ - Repubblica Ceca 17
IL - Israele 16
DZ - Algeria 15
TN - Tunisia 15
EU - Europa 14
GR - Grecia 14
JO - Giordania 14
LT - Lituania 14
UY - Uruguay 14
AZ - Azerbaigian 13
BY - Bielorussia 13
JM - Giamaica 13
NP - Nepal 13
PE - Perù 13
RO - Romania 13
KZ - Kazakistan 12
AU - Australia 11
BO - Bolivia 11
DO - Repubblica Dominicana 11
TH - Thailandia 11
UZ - Uzbekistan 11
KE - Kenya 10
TT - Trinidad e Tobago 9
CR - Costa Rica 8
ET - Etiopia 7
OM - Oman 7
AL - Albania 6
CU - Cuba 6
CY - Cipro 6
GT - Guatemala 6
HN - Honduras 6
MD - Moldavia 6
NI - Nicaragua 6
SN - Senegal 6
AM - Armenia 5
BH - Bahrain 5
KG - Kirghizistan 5
BB - Barbados 4
EE - Estonia 4
GE - Georgia 4
HU - Ungheria 4
NG - Nigeria 4
QA - Qatar 4
CI - Costa d'Avorio 3
DK - Danimarca 3
LK - Sri Lanka 3
LV - Lettonia 3
PA - Panama 3
PR - Porto Rico 3
PS - Palestinian Territory 3
RS - Serbia 3
Totale 44.197
Salva come PNG Salva come JPEG
Città #
Fairfield 2.264
Ashburn 2.102
Singapore 2.073
Santa Clara 2.014
Hong Kong 1.698
Woodbridge 1.423
Southend 1.322
Chandler 1.130
Houston 1.070
Warsaw 1.020
San Jose 1.012
Hefei 962
Seattle 908
Ann Arbor 786
Wilmington 715
Cambridge 693
Jacksonville 655
Nyköping 580
Beijing 512
Dearborn 503
London 479
Chicago 388
Council Bluffs 382
Seoul 381
Modena 374
Los Angeles 326
Ho Chi Minh City 299
The Dalles 294
Dublin 279
Hanoi 252
San Diego 240
New York 234
Buffalo 227
Helsinki 227
Izmir 226
Princeton 171
Milan 170
Sofia 150
Lauterbourg 134
Eugene 124
Moscow 115
Boardman 112
Dallas 104
Badalona 101
São Paulo 99
Shanghai 89
Frankfurt am Main 87
Columbus 83
Munich 81
Salt Lake City 81
Grafing 75
Tokyo 69
East Aurora 65
Redwood City 65
Des Moines 63
Guangzhou 62
Atlanta 59
Da Nang 57
Taipei 55
Montreal 52
Orem 52
Rome 52
Tampa 51
Amsterdam 50
Bremen 50
Wuhan 47
Washington 43
Brooklyn 42
Chennai 41
Haiphong 37
Toronto 37
Brantford 36
Delfgauw 36
Phoenix 36
Bologna 35
Mexico City 34
Redondo Beach 34
Elk Grove Village 33
Jakarta 33
Leesburg 33
Rio de Janeiro 32
San Francisco 30
Baghdad 28
Dhaka 28
Turku 28
Miano 27
Belo Horizonte 26
Poplar 26
Reggio Emilia 26
Denver 25
Groningen 25
Hangzhou 25
Shenzhen 25
Nanjing 24
Parma 24
Mumbai 23
Nuremberg 23
Boston 22
Falls Church 22
Norwalk 22
Totale 31.696
Salva come PNG Salva come JPEG
Nome #
A Complete Statistical Investigation of RTN in HfO₂-Based RRAM in High Resistive State 761
A Compact Model of Program Window in HfOx RRAM Devices for Conductive Filament Characteristics Analysis 697
A Charge-Trapping Model for the Fast Component of Positive Bias Temperature Instability (PBTI) in High-k Gate-Stacks 618
Leakage current in HfO2 stacks: from physical to compact modeling 487
A HydroDynamic Model for Trap-Assisted Tunneling Conduction in Ovonic Devices 419
Physical Mechanisms behind the Field-Cycling Behavior of HfO2-Based Ferroelectric Capacitors 411
Anomalous random telegraph noise and temporary phenomena in resistive random access memory 398
A microscopic physical description of RTN current fluctuations in HfOx RRAM 388
Random telegraph noise: Measurement, data analysis, and interpretation 380
A Comprehensive Understanding of the Erase of TANOS Memories Through Charge Separation Experiments and Simulations 378
Recommended Methods to Study Resistive Switching Devices 377
Leakage current through the poly-crystalline HfO2: trap densities at grains and grain boundaries 369
A Compact Model of Hafnium-Oxide-Based Resistive Random Access Memory 368
Comprehensive physical modeling of forming and switching operations in HfO2 RRAM devices 367
Characterization of anomalous Random Telegraph Noise in Resistive Random Access Memory 364
Dielectric breakdown of oxide films in electronic devices 351
Charge transport in high-k stacks for charge-trapping memory applications: A modeling perspective (invited) 329
A study of the leakage current in TiN/HfO2/TiN capacitors 327
A study on HfO2 RRAM in HRS based on I–V and RTN analysis 325
Metal oxide resistive memory switching mechanism based on conductive filament properties 321
Experimental and Theoretical Study of Electrode Effects in HfO2 based RRAM 318
Progresses in Modeling HfOx RRAM Operations and Variability 317
Bipolar Resistive RAM Based on HfO2: Physics, Compact Modeling, and Variability Control 316
Charge Transport and Degradation in HfO2 and HfOx Dielectrics 314
Instability of HfO2 RRAM devices: Comparing RTN and cycling variability 312
Analysis of RTN and cycling variability in HfO2 RRAM devices in LRS 310
A Physics-Based Model of the Dielectric Breakdown in HfO2 for Statistical Reliability Prediction 309
A simulation framework for modeling charge transport and degradation in high-k stacks 309
A novel Algorithm for the Solution of Charge Transport Equations in MANOS Devices Including Charge Trapping in Alumina and Temperature Effects 307
Evidences for vertical charge dipole formation in charge-trapping memories and its impact on reliability 305
Defect density evaluation in a high-k MOSFET gate stack combining experimental and modeling methods 303
Localized characterization of charge transport and random telegraph noise at the nanoscale in HfO2 films combining scanning tunneling microscopy and multi-scale simulations 302
Electrical defect spectroscopy and reliability prediction through a novel simulation-based methodology 302
Analysis of interface-trap effects in inversion-type InGaAs/ZrO2 MOSFETs 301
A Physical Model for Post-Breakdown Digital Gate Current Noise 300
On the RESET-SET transition in Phase Change Memories 299
A Physical model of the temperature dependence of the current through SiO2/HfO2 stacks 298
Experimental assessment of electrons and holes in erase transient of TANOS and TANVaS memories 296
RTS Noise Characterization of HfOx RRAM in High Resistive State 295
Mechanism of high-k dielectric-induced breakdown of interfacial SiO2 layer 294
A microscopic mechanism of dielectric breakdown in SiO2films: An insight from multi-scale modeling 293
Device‐to‐Materials Pathway for Electron Traps Detection in Amorphous GeSe‐Based Selectors 292
Dielectric Reliability for Future Logic and Non-Volatile Memory Applications: a Statistical Simulation Analysis Approach 291
Self-rectifying behavior and analog switching under identical pulses using Tri-layer RRAM crossbar array for neuromorphic systems 290
Random Telegraph Noise analysis to investigate the properties of active traps of HfO2-Based RRAM in HRS 289
Perimeter and area current components in HfO2 and HfO2-x metal-insulator-metal capacitors 289
An Empirical Model for RRAM Resistance in Low- and High-Resistance State 289
Feasibility of SIO2/Al2O3 tunnel dielectric for future Flash memories generations 288
Microscopic Modeling of HfOₓ RRAM Operations: From Forming to Switching 288
Grain boundary-driven leakage path formation in HfO2 dielectrics 287
Charge trapping in alumina and its impact on the operation of metal-alumina-nitride-oxide-silicon memories: experiments and simulations 286
Statistical analysis of random telegraph noise in HfO2-based RRAM devices in LRS 286
Investigation of the role of electrodes on the retention performance of HfOx based RRAM cells by experiments, atomistic simulations and device physical modeling 285
A Sensitivity Map-Based Approach to Profile Defects in MIM Capacitors From I-V, C-V, and G-V Measurements 285
Microscopic Modeling of Electrical Stress -Induced Breakdown in Poly-Crystalline Hafnium Oxide Dielectrics 285
Extracting Atomic Defect Properties From Leakage Current Temperature Dependence 283
Operations, Charge Transport, and Random Telegraph Noise in HfOx Resistive Random Access Memory: a Multi-scale Modeling Study 282
Scaling perspective and reliability of conductive filament formation in ultra-scaled HfO2 Resistive Random Access Memory 281
Single vacancy defect spectroscopy on HfO2 using random telegraph noise signals from scanning tunneling microscopy 280
Multiscale modeling for application-oriented optimization of resistive random-access memory 276
Threshold Shift Observed in Resistive Switching in Metal-Oxide-Semiconductor Transistors and the Effect of Forming Gas Anneal 275
Investigation of trapping/detrapping mechanisms in Al2O3 electron/hole traps and their influence on TANOS memory operations 275
Hole Distributions in NROM Devices: Profiling Technique and Correlation to Memory Retention 272
Modeling NAND Flash Memories for IC Design 272
Connecting electrical and structural dielectric characteristics 271
Compact modeling of TANOS program/erase operations for SPICE-like circuit simulations 269
Role of Holes and Electrons During Erase of TANOS Memories: Evidences for Dipole Formation and its Impact on Reliability 268
Multi-scale modeling of oxygen vacancies assisted charge transport in sub-stoichiometric TiOx for RRAM application 268
Hole Distributions in Erased NROM Devices: profiling method and effects on reliability 264
Multiscale modeling of electron-ion interactions for engineering novel electronic devices and materials 262
Multiscale modeling of defect-related phenomena in high-k based logic and memory devices 260
Temperature Effects on Metal-Alumina-Nitride-Oxide-Silicon Memory Operations 255
Root cause of degradation in novel HfO2-based ferroelectric memories 255
Connecting the physical and electrical properties of Hafnia-based RRAM 253
Microscopic understanding and modeling of HfO2 RRAM device physics 252
Advanced modeling and characterization techniques for innovative memory devices: The RRAM case 251
Monte-Carlo Simulations of Flash Memory Array Retention 250
Modeling NAND Flash memories for circuit simulations 249
Cross-correlation of electrical measurements via physics-based device simulations: Linking electrical and structural characteristics 249
Metal oxide RRAM switching mechanism based on conductive filament microscopic properties 246
Modeling of the forming operation in HfO2-base resistive switching memories 243
Random Telegraph Signal Noise Properties of HfOx RRAM in High Resistive States 243
Modeling TANOS Memory Program Transients to Investigate Charge Trapping Dynamics 242
Dielectric morphology and RRAM resistive switching characteristics 240
Charge loss in TANOS devices caused by Vt sensing measurements during retention 239
Random telegraph noise (RTN) in scaled RRAM devices 239
Fundamental reliability issues of advanced charge-trapping Flash memory devices 237
Linking Conductive Filament Properties and Evolution to Synaptic Behavior of RRAM Devices for Neuromorphic Applications 237
A technique to extract high-k IPD stack layer thicknesses from C-V measurements 235
Connecting electrical and structural dielectric characteristics 234
Role of electron and hole trapping in the degradation and breakdown of SiO2 and HfO2 films 231
Advanced high-k materials and electrical analysis for memories: the role of SiO2-high-k dielectric intermixing 230
Temperature impact (up to 200 °C) on performance and reliability of HfO2-based RRAMs 229
New insights into SILC-based life time extraction 229
Multiscale modeling of electron-ion interactions for engineering novel electronic device and materials 228
SET switching effects on PCM endurance 227
Physical modeling of charge transport and degradation in HfO 2 stacks for logic device and memory applications 226
Random telegraph noise in 2D hexagonal boron nitride dielectric films 226
Leakage Current - Forming Voltage Relation and Oxygen Gettering in HfOx RRAM Devices 225
Connecting RRAM Performance to the Properties of the Hafnia-based Dielectrics 225
Totale 30.148
Salva come PNG Salva come JPEG
Categoria #
all - tutte 169.099
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 169.099
Salva come PNG Salva come JPEG


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/2021194 0 0 0 0 0 0 0 0 0 0 0 194
2021/20223.246 199 301 330 123 77 278 149 147 324 282 738 298
2022/20233.119 272 382 226 223 363 520 46 326 390 41 165 165
2023/20242.460 122 182 132 283 587 307 178 268 31 64 59 247
2024/20258.176 442 94 98 538 1.337 1.034 640 484 864 348 1.098 1.199
2025/202615.115 925 830 1.167 1.112 1.941 1.848 1.877 697 1.415 1.327 1.170 806
Totale 44.522