PADOVANI, ANDREA
 Distribuzione geografica
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Continente #
NA - Nord America 14.190
EU - Europa 4.976
AS - Asia 2.233
SA - Sud America 19
Continente sconosciuto - Info sul continente non disponibili 16
OC - Oceania 9
AF - Africa 7
Totale 21.450
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Nazione #
US - Stati Uniti d'America 14.161
GB - Regno Unito 1.597
SE - Svezia 760
IT - Italia 759
CN - Cina 694
DE - Germania 492
SG - Singapore 483
HK - Hong Kong 463
TR - Turchia 321
UA - Ucraina 317
IE - Irlanda 281
FI - Finlandia 198
BG - Bulgaria 148
FR - Francia 140
PT - Portogallo 111
KR - Corea 105
TW - Taiwan 55
RU - Federazione Russa 47
IN - India 44
BE - Belgio 29
CA - Canada 22
NL - Olanda 22
CH - Svizzera 18
JP - Giappone 18
ES - Italia 16
IR - Iran 15
EU - Europa 14
ID - Indonesia 12
AT - Austria 11
BR - Brasile 10
AU - Australia 7
CZ - Repubblica Ceca 7
CU - Cuba 6
IL - Israele 6
RO - Romania 6
MY - Malesia 5
AR - Argentina 4
CL - Cile 4
LT - Lituania 4
PK - Pakistan 4
DZ - Algeria 3
LU - Lussemburgo 3
MA - Marocco 3
A2 - ???statistics.table.value.countryCode.A2??? 2
AM - Armenia 2
BD - Bangladesh 2
GR - Grecia 2
MD - Moldavia 2
NZ - Nuova Zelanda 2
SA - Arabia Saudita 2
VN - Vietnam 2
AD - Andorra 1
AL - Albania 1
DK - Danimarca 1
HU - Ungheria 1
MX - Messico 1
PE - Perù 1
PL - Polonia 1
SC - Seychelles 1
SI - Slovenia 1
Totale 21.450
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Città #
Fairfield 2.260
Woodbridge 1.422
Southend 1.322
Ashburn 1.230
Chandler 1.130
Houston 1.051
Seattle 901
Ann Arbor 774
Wilmington 698
Cambridge 693
Jacksonville 650
Nyköping 580
Dearborn 503
Hong Kong 446
Modena 344
Singapore 326
Dublin 268
Beijing 239
Izmir 224
San Diego 224
Princeton 171
Sofia 147
Eugene 124
Boardman 96
London 91
Chicago 89
Helsinki 86
Grafing 75
New York 75
Redwood City 65
Des Moines 60
Bremen 50
Milan 44
Leesburg 33
Taipei 33
Shanghai 31
Hefei 26
Guangzhou 23
Falls Church 22
Norwalk 22
Wuhan 21
Nanjing 20
San Mateo 19
Bologna 18
Kilburn 18
Kunming 17
Atlanta 16
Chiswick 16
Dresden 16
Hounslow 16
Parma 16
Rome 16
Los Angeles 15
Reggio Emilia 14
Indiana 13
Brussels 12
Jakarta 12
Xian 12
Aachen 11
Mountain View 11
Amsterdam 10
Augusta 10
Frankfurt am Main 10
Pohang 10
Saint Petersburg 10
Seoul 10
Buffalo 9
Dallas 9
Dongguan 9
Hsinchu 9
Seongnam-si 9
Toronto 9
Zhengzhou 9
Ardabil 8
Cesena 8
Fremont 8
Leuven 8
Munich 8
Prescot 8
San Francisco 8
Santa Clara 8
Shenzhen 8
Stanford 8
Suwon 8
Tokyo 8
Varallo 8
Bellaterra 7
Changsha 7
Hangzhou 7
Jinan 7
Monmouth Junction 7
Mumbai 7
Verona 7
Vienna 7
Andover 6
Durham 6
Gif-sur-yvette 6
Gothenburg 6
Grenoble 6
Havana 6
Totale 17.276
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Nome #
Leakage current in HfO2 stacks: from physical to compact modeling 275
Recommended Methods to Study Resistive Switching Devices 268
A Complete Statistical Investigation of RTN in HfO₂-Based RRAM in High Resistive State 261
Anomalous random telegraph noise and temporary phenomena in resistive random access memory 247
A HydroDynamic Model for Trap-Assisted Tunneling Conduction in Ovonic Devices 220
A microscopic physical description of RTN current fluctuations in HfOx RRAM 206
Progresses in Modeling HfOx RRAM Operations and Variability 204
A Compact Model of Hafnium-Oxide-Based Resistive Random Access Memory 203
A Compact Model of Program Window in HfOx RRAM Devices for Conductive Filament Characteristics Analysis 201
Random telegraph noise: Measurement, data analysis, and interpretation 200
Statistical analysis of random telegraph noise in HfO2-based RRAM devices in LRS 198
Investigation of trapping/detrapping mechanisms in Al2O3 electron/hole traps and their influence on TANOS memory operations 192
Charge transport in high-k stacks for charge-trapping memory applications: A modeling perspective (invited) 189
Dielectric Reliability for Future Logic and Non-Volatile Memory Applications: a Statistical Simulation Analysis Approach 187
Perimeter and area current components in HfO2 and HfO2-x metal-insulator-metal capacitors 187
Evidences for vertical charge dipole formation in charge-trapping memories and its impact on reliability 186
Single vacancy defect spectroscopy on HfO2 using random telegraph noise signals from scanning tunneling microscopy 185
A Comprehensive Understanding of the Erase of TANOS Memories Through Charge Separation Experiments and Simulations 184
Charge Transport and Degradation in HfO2 and HfOx Dielectrics 183
Random Telegraph Noise analysis to investigate the properties of active traps of HfO2-Based RRAM in HRS 182
Localized characterization of charge transport and random telegraph noise at the nanoscale in HfO2 films combining scanning tunneling microscopy and multi-scale simulations 181
Comprehensive physical modeling of forming and switching operations in HfO2 RRAM devices 181
Experimental and Theoretical Study of Electrode Effects in HfO2 based RRAM 178
Bipolar Resistive RAM Based on HfO2: Physics, Compact Modeling, and Variability Control 178
Physical Mechanisms behind the Field-Cycling Behavior of HfO2-Based Ferroelectric Capacitors 178
Modeling NAND Flash Memories for IC Design 177
Defect density evaluation in a high-k MOSFET gate stack combining experimental and modeling methods 177
RTS Noise Characterization of HfOx RRAM in High Resistive State 176
A study of the leakage current in TiN/HfO2/TiN capacitors 175
A novel Algorithm for the Solution of Charge Transport Equations in MANOS Devices Including Charge Trapping in Alumina and Temperature Effects 174
A study on HfO2 RRAM in HRS based on I–V and RTN analysis 174
Linking Conductive Filament Properties and Evolution to Synaptic Behavior of RRAM Devices for Neuromorphic Applications 174
Characterization of anomalous Random Telegraph Noise in Resistive Random Access Memory 173
Operations, Charge Transport, and Random Telegraph Noise in HfOx Resistive Random Access Memory: a Multi-scale Modeling Study 173
Compact modeling of TANOS program/erase operations for SPICE-like circuit simulations 172
Experimental assessment of electrons and holes in erase transient of TANOS and TANVaS memories 171
Mechanism of high-k dielectric-induced breakdown of interfacial SiO2 layer 171
Charge trapping in alumina and its impact on the operation of metal-alumina-nitride-oxide-silicon memories: experiments and simulations 171
Scaling perspective and reliability of conductive filament formation in ultra-scaled HfO2 Resistive Random Access Memory 171
Connecting electrical and structural dielectric characteristics 171
A Physical Model for Post-Breakdown Digital Gate Current Noise 170
A simulation framework for modeling charge transport and degradation in high-k stacks 170
Self-rectifying behavior and analog switching under identical pulses using Tri-layer RRAM crossbar array for neuromorphic systems 170
Metal oxide resistive memory switching mechanism based on conductive filament properties 170
On the RESET-SET transition in Phase Change Memories 165
Microscopic Modeling of HfOₓ RRAM Operations: From Forming to Switching 165
Hole Distributions in Erased NROM Devices: profiling method and effects on reliability 165
Multiscale modeling of electron-ion interactions for engineering novel electronic devices and materials 165
Grain boundary-driven leakage path formation in HfO2 dielectrics 165
Analysis of interface-trap effects in inversion-type InGaAs/ZrO2 MOSFETs 165
Leakage current through the poly-crystalline HfO2: trap densities at grains and grain boundaries 164
Multiscale modeling of defect-related phenomena in high-k based logic and memory devices 164
Electrical defect spectroscopy and reliability prediction through a novel simulation-based methodology 164
Extracting Atomic Defect Properties From Leakage Current Temperature Dependence 163
Dielectric morphology and RRAM resistive switching characteristics 162
Temperature Effects on Metal-Alumina-Nitride-Oxide-Silicon Memory Operations 160
Microscopic Modeling of Electrical Stress -Induced Breakdown in Poly-Crystalline Hafnium Oxide Dielectrics 160
Monte-Carlo Simulations of Flash Memory Array Retention 158
Threshold Shift Observed in Resistive Switching in Metal-Oxide-Semiconductor Transistors and the Effect of Forming Gas Anneal 157
Instability of HfO2 RRAM devices: Comparing RTN and cycling variability 157
Microscopic understanding and modeling of HfO2 RRAM device physics 156
Feasibility of SIO2/Al2O3 tunnel dielectric for future Flash memories generations 155
Metal oxide RRAM switching mechanism based on conductive filament microscopic properties 155
High-k related reliability issues in advanced Non-Volatile Memories 155
Hole Distributions in NROM Devices: Profiling Technique and Correlation to Memory Retention 154
A microscopic mechanism of dielectric breakdown in SiO2films: An insight from multi-scale modeling 153
New insights into SILC-based life time extraction 152
Analysis of RTN and cycling variability in HfO2 RRAM devices in LRS 151
Root cause of degradation in novel HfO2-based ferroelectric memories 151
Connecting the physical and electrical properties of Hafnia-based RRAM 151
Multi-scale modeling of oxygen vacancies assisted charge transport in sub-stoichiometric TiOx for RRAM application 151
Leakage Current - Forming Voltage Relation and Oxygen Gettering in HfOx RRAM Devices 149
Modeling TANOS Memory Program Transients to Investigate Charge Trapping Dynamics 146
Role of Holes and Electrons During Erase of TANOS Memories: Evidences for Dipole Formation and its Impact on Reliability 145
Random telegraph noise (RTN) in scaled RRAM devices 145
Resilience of Ultra-Thin Oxynitride Films to Percolative Wear-Out and Reliability Implications for High-k Stacks at Low Voltage Stress 145
Fundamental reliability issues of advanced charge-trapping Flash memory devices 143
Charge loss in TANOS devices caused by Vt sensing measurements during retention 142
Random telegraph noise in 2D hexagonal boron nitride dielectric films 142
A Sensitivity Map-Based Approach to Profile Defects in MIM Capacitors From I-V, C-V, and G-V Measurements 142
A Physics-Based Model of the Dielectric Breakdown in HfO2 for Statistical Reliability Prediction 141
A Charge-Trapping Model for the Fast Component of Positive Bias Temperature Instability (PBTI) in High-k Gate-Stacks 141
SET switching effects on PCM endurance 140
Multiscale modeling for application-oriented optimization of resistive random-access memory 138
Investigation of the role of electrodes on the retention performance of HfOx based RRAM cells by experiments, atomistic simulations and device physical modeling 137
Statistical Methodologies for Integrated Circuits Design 136
Random Telegraph Signal Noise Properties of HfOx RRAM in High Resistive States 135
Physical modeling of charge transport and degradation in HfO 2 stacks for logic device and memory applications 135
Multiscale modeling of oxide RRAM devices for memory applications: from material properties to device performance 134
An Empirical Model for RRAM Resistance in Low- and High-Resistance State 133
Modeling the Effects of Different Forming Conditions on RRAM Conductive Filament Stability 132
Modeling NAND Flash memories for circuit simulations 131
Temperature impact (up to 200 °C) on performance and reliability of HfO2-based RRAMs 131
Connecting RRAM Performance to the Properties of the Hafnia-based Dielectrics 131
Understanding the Role of the Ti Metal Electrode on the Forming of HfO2-based RRAMs 131
Device‐to‐Materials Pathway for Electron Traps Detection in Amorphous GeSe‐Based Selectors 130
Correlated Effects on Forming and Retention of Al Doping in HfO2-Based RRAM 130
Modeling of the forming operation in HfO2-base resistive switching memories 128
A Physical model of the temperature dependence of the current through SiO2/HfO2 stacks 127
Cross-correlation of electrical measurements via physics-based device simulations: Linking electrical and structural characteristics 124
Totale 16.581
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Categoria #
all - tutte 94.569
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 94.569
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/20204.098 0 164 132 305 557 684 725 468 482 186 256 139
2020/20213.806 285 124 249 293 355 403 312 503 255 553 280 194
2021/20223.246 199 301 330 123 77 278 149 147 324 282 738 298
2022/20233.119 272 382 226 223 363 520 46 326 390 41 165 165
2023/20242.460 122 182 132 283 587 307 178 268 31 64 59 247
2024/2025456 442 14 0 0 0 0 0 0 0 0 0 0
Totale 21.687