The semiconductor technology development requires a full understanding of material implications at the device level. This requires connecting the microscopic/atomic properties of the material (e.g. defect) to the macroscopic electrical characteristics of the device. In this scenario, we developed a new methodology, supported by a multi-scale modeling and simulation (MS) software [1], [2], which allows extracting from the simulations of the electrical characterization measurements (I-V, C-V, G-V, BTI, Charge-Pumping, noise, stress) the material and device properties that can be used for the technology development, the design of novel devices and the analysis of the device reliability also at statistical level (TDDB, leakage currents), Fig. 1.

Electrical defect spectroscopy and reliability prediction through a novel simulation-based methodology / Larcher, Luca; Sereni, Gabriele; Padovani, Andrea; Vandelli, Luca. - (2016), pp. 1-2. ((Intervento presentato al convegno International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2016 tenutosi a twn nel 2016 [10.1109/VLSI-TSA.2016.7480529].

I metadati presenti in IRIS UNIMORE sono rilasciati con licenza Creative Commons CC0 1.0 Universal, mentre i file delle pubblicazioni sono rilasciati con licenza Attribuzione 4.0 Internazionale (CC BY 4.0), salvo diversa indicazione.
In caso di violazione di copyright, contattare Supporto Iris

Powered by IRIS-about IRIS-Utilizzo dei cookie

 Copyright © 2022