The semiconductor technology development requires a full understanding of material implications at the device level. This requires connecting the microscopic/atomic properties of the material (e.g. defect) to the macroscopic electrical characteristics of the device. In this scenario, we developed a new methodology, supported by a multi-scale modeling and simulation (MS) software [1], [2], which allows extracting from the simulations of the electrical characterization measurements (I-V, C-V, G-V, BTI, Charge-Pumping, noise, stress) the material and device properties that can be used for the technology development, the design of novel devices and the analysis of the device reliability also at statistical level (TDDB, leakage currents), Fig. 1.
Data di pubblicazione: | 2016 |
Titolo: | Electrical defect spectroscopy and reliability prediction through a novel simulation-based methodology |
Autore/i: | Larcher, Luca; Sereni, Gabriele; Padovani, Andrea; Vandelli, Luca |
Autore/i UNIMORE: | |
Digital Object Identifier (DOI): | 10.1109/VLSI-TSA.2016.7480529 |
Nome del convegno: | International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2016 |
Luogo del convegno: | twn |
Data del convegno: | 2016 |
Tipologia | Relazione in Atti di Convegno |
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