ItalianoVANDELLI, LUCA
Pubblicazioni
Risultati 1 - 20 di 38 (tempo di esecuzione: 0.002 secondi).
| Titolo | Data di pubblicazione | Autore(i) | |
|---|---|---|---|
| 1 | Charge transport in high-k stacks for charge-trapping memory applications: A modeling perspective (invited) | 2011 | Larcher, Luca; Padovani, Andrea; Vandelli, Luca; Pavan, Paolo |
| 2 | A Charge-Trapping Model for the Fast Component of Positive Bias Temperature Instability (PBTI) in High-k Gate-Stacks | 2014 | Vandelli, Luca; Larcher, Luca; Veksler, Dmitry; Padovani, Andrea; Bersuker, Gennadi; Matthews, Kenneth |
| 3 | A Compact Model of Program Window in HfOx RRAM Devices for Conductive Filament Characteristics Analysis | 2014 | Larcher, Luca; Puglisi, Francesco Maria; Pavan, Paolo; Padovani, Andrea; Vandelli, Luca; Bersuker, Gennadi |
| 4 | Comprehensive physical modeling of forming and switching operations in HfO2 RRAM devices | 2011 | Vandelli, Luca; Padovani, Andrea; Larcher, Luca; G., Broglia; G., Ori; Montorsi, Monia; G., Bersuker; Pavan, Paolo |
| 5 | A Comprehensive Understanding of the Erase of TANOS Memories Through Charge Separation Experiments and Simulations | 2011 | Padovani, Andrea; A., Arreghini; Vandelli, Luca; Larcher, Luca; G., Van den Bosh; Pavan, Paolo; J., Van Houdt |
| 6 | Connecting the physical and electrical properties of Hafnia-based RRAM | 2013 | B., Butcher; G., Bersuker; D., Gilmer; P., Kirsch; Larcher, Luca; Padovani, Andrea; Vandelli, Luca; R., Geer; P. D., Kirsch |
| 7 | Cross-correlation of electrical measurements via physics-based device simulations: Linking electrical and structural characteristics | 2015 | Padovani, A.; Larcher, L.; Vandelli, L.; Bertocchi, M.; Cavicchioli, R.; Veksler, D.; Bersuker, G. |
| 8 | Defect density evaluation in a high-k MOSFET gate stack combining experimental and modeling methods | 2014 | Puglisi, Francesco Maria; Veksler, D.; Matthews, K.; Bersuker, G.; Larcher, Luca; Padovani, Andrea; Vandelli, Luca; Pavan, Paolo |
| 9 | Defect spectroscopy and engineering for nanoscale electron device applications: A novel simulation-based methodology | 2016 | Larcher, Luca; Sereni, Gabriele; Vandelli, Luca |
| 10 | Electrical defect spectroscopy and reliability prediction through a novel simulation-based methodology | 2016 | Larcher, Luca; Sereni, Gabriele; Padovani, Andrea; Vandelli, Luca |
| 11 | Evidences for vertical charge dipole formation in charge-trapping memories and its impact on reliability | 2012 | Padovani, Andrea; A., Arreghini; Vandelli, Luca; Larcher, Luca; G., Van den bosch; J., Van Houdt |
| 12 | Experimental and Theoretical Study of Electrode Effects in HfO2 based RRAM | 2011 | C., Cagli; J., Buckley; V., Jousseaume; A., Salaun; H., Grampeix; J. F., Nodin; H., Feldis; A., Persico; J., Cluzel; P., Lorenzi; L., Massari; R., Rao; F., Irrera; T., Cabout; F., Aussenac; C., Carabasse; M., Coue; P., Calka; E., Martinez; L., Perniola; P., Blaise; Z., Fang; Y. H., Yu; G., Ghibaudo; D., Deleruyelle; M., Bocquet; C., Muller; Padovani, Andrea; Pirrotta, Onofrio; Vandelli, Luca; Larcher, Luca; G., Reimbold; B., de Salvo |
| 13 | Experimental assessment of electrons and holes in erase transient of TANOS and TANVaS memories | 2010 | A., Suhane; A., Arreghini; G., Van den bosch; Vandelli, Luca; Padovani, Andrea; L., Breuil; Larcher, Luca; K., De Meyer; J., Van Houdt |
| 14 | Grain boundary-driven leakage path formation in HfO2 dielectrics | 2011 | G., Bersuker; J., Yum; Vandelli, Luca; Padovani, Andrea; Larcher, Luca; V., Iglesias; M., Porti; M., Nafría; K., Mckenna; A., Shluger; P., Kirsch; R., Jammy |
| 15 | (Invited) Physical Modeling of Charge Transport and Degradation in HfO2 Stacks for Logic Device and Memory Applications | 2011 | Larcher, Luca; Padovani, Andrea; Vandelli, Luca; G., Bersuker |
| 16 | Low Power RRAM with Improved HRS/LRS Uniformity through Efficient Filament Control Using CVS Forming | 2011 | A., Kalantarian; G., Bersuker; D. C., Gilmer; B., Butcher; Padovani, Andrea; Vandelli, Luca; Larcher, Luca; R., Geer; Y., Nishi; P., Kirsch |
| 17 | Metal oxide resistive memory switching mechanism based on conductive filament properties | 2011 | G., Bersuker; D. C., Gilmer; D., Veksler; P., Kirsch; Vandelli, Luca; Padovani, Andrea; Larcher, Luca; K., Mckenna; A., Shluger; V., Iglesias; M., Porti; M., Nafría |
| 18 | Metal oxide RRAM switching mechanism based on conductive filament microscopic properties | 2010 | G., Bersuker; D. C., Gilmer; D., Veksler; J., Yum; H., Park; S., Lian; Vandelli, Luca; Padovani, Andrea; Larcher, Luca; K., Mckenna; A., Shluger; V., Iglesias; M., Porti; M., Nafría; W., Taylor; P. D., Kirsch; R., Jammy |
| 19 | Microscopic Modeling of Electrical Stress -Induced Breakdown in Poly-Crystalline Hafnium Oxide Dielectrics | 2013 | Vandelli, Luca; Padovani, Andrea; Larcher, Luca; G., Bersuker |
| 20 | Microscopic Modeling of HfOₓ RRAM Operations: From Forming to Switching | 2015 | Padovani, Andrea; Larcher, Luca; Pirrotta, Onofrio; Vandelli, Luca; Bersuker, Gennadi |
Dettaglio
VANDELLI, LUCA
Dipartimento di Ingegneria "Enzo Ferrari"
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