VANDELLI, LUCA

VANDELLI, LUCA  

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Risultati 1 - 20 di 38 (tempo di esecuzione: 0.027 secondi).
Titolo Data di pubblicazione Autore(i) File
A Charge-Trapping Model for the Fast Component of Positive Bias Temperature Instability (PBTI) in High-k Gate-Stacks 1-gen-2014 Vandelli, Luca; Larcher, Luca; Veksler, Dmitry; Padovani, Andrea; Bersuker, Gennadi; Matthews, Kenneth
A Compact Model of Program Window in HfOx RRAM Devices for Conductive Filament Characteristics Analysis 1-gen-2014 Larcher, Luca; Puglisi, Francesco Maria; Pavan, Paolo; Padovani, Andrea; Vandelli, Luca; Bersuker, Gennadi
A Comprehensive Understanding of the Erase of TANOS Memories Through Charge Separation Experiments and Simulations 1-gen-2011 Padovani, Andrea; A., Arreghini; Vandelli, Luca; Larcher, Luca; G., Van den Bosh; Pavan, Paolo; J., Van Houdt
A microscopic physical description of RTN current fluctuations in HfOx RRAM 1-gen-2015 Puglisi, Francesco Maria; Pavan, Paolo; Vandelli, Luca; Padovani, Andrea; Bertocchi, Matteo; Larcher, Luca
A New Physical Method Based on CV--GV Simulations for the Characterization of the Interfacial and Bulk Defect Density in High-k/III--V MOSFETs 1-gen-2015 Sereni, Gabriele; Vandelli, Luca; Veksler, Dmitry; Larcher, Luca
A novel technique exploiting C-V, G-V and I-V simulations to investigate defect distribution and native oxide in high-κ dielectrics for III-V MOSFETs 1-gen-2015 Sereni, Gabriele; Larcher, Luca; Vandelli, Luca; Veksler, D.; Kim, T.; Koh, D.; Bersuker, Gennadi
A Physical model of the temperature dependence of the current through SiO2/HfO2 stacks 1-gen-2011 Vandelli, Luca; Padovani, Andrea; Larcher, Luca; R. G., Southwick III; W. B., Knowlton; G., Bersuker
A Physics-Based Model of the Dielectric Breakdown in HfO2 for Statistical Reliability Prediction 1-gen-2011 Vandelli, Luca; G., Bersuker; Padovani, Andrea; J. H., Yum; Larcher, Luca; Pavan, Paolo
A simulation framework for modeling charge transport and degradation in high-k stacks 1-gen-2013 Larcher, Luca; Padovani, Andrea; Vandelli, Luca
Charge transport in high-k stacks for charge-trapping memory applications: A modeling perspective (invited) 1-gen-2011 Larcher, Luca; Padovani, Andrea; Vandelli, Luca; Pavan, Paolo
Comprehensive physical modeling of forming and switching operations in HfO2 RRAM devices 1-gen-2011 Vandelli, Luca; Padovani, Andrea; Larcher, Luca; G., Broglia; G., Ori; Montorsi, Monia; G., Bersuker; Pavan, Paolo
Connecting the physical and electrical properties of Hafnia-based RRAM 1-gen-2013 B., Butcher; G., Bersuker; D., Gilmer; P., Kirsch; Larcher, Luca; Padovani, Andrea; Vandelli, Luca; R., Geer; P. D., Kirsch
Cross-correlation of electrical measurements via physics-based device simulations: Linking electrical and structural characteristics 1-gen-2015 Padovani, A.; Larcher, L.; Vandelli, L.; Bertocchi, M.; Cavicchioli, R.; Veksler, D.; Bersuker, G.
Defect density evaluation in a high-k MOSFET gate stack combining experimental and modeling methods 1-gen-2014 Puglisi, Francesco Maria; Veksler, D.; Matthews, K.; Bersuker, G.; Larcher, Luca; Padovani, Andrea; Vandelli, Luca; Pavan, Paolo
Defect spectroscopy and engineering for nanoscale electron device applications: A novel simulation-based methodology 1-gen-2016 Larcher, Luca; Sereni, Gabriele; Vandelli, Luca
Electrical defect spectroscopy and reliability prediction through a novel simulation-based methodology 1-gen-2016 Larcher, Luca; Sereni, Gabriele; Padovani, Andrea; Vandelli, Luca
Evidences for vertical charge dipole formation in charge-trapping memories and its impact on reliability 1-gen-2012 Padovani, Andrea; A., Arreghini; Vandelli, Luca; Larcher, Luca; G., Van den bosch; J., Van Houdt
Experimental and Theoretical Study of Electrode Effects in HfO2 based RRAM 1-gen-2011 C., Cagli; J., Buckley; V., Jousseaume; A., Salaun; H., Grampeix; J. F., Nodin; H., Feldis; A., Persico; J., Cluzel; P., Lorenzi; L., Massari; R., Rao; F., Irrera; T., Cabout; F., Aussenac; C., Carabasse; M., Coue; P., Calka; E., Martinez; L., Perniola; P., Blaise; Z., Fang; Y. H., Yu; G., Ghibaudo; D., Deleruyelle; M., Bocquet; C., Muller; Padovani, Andrea; Pirrotta, Onofrio; Vandelli, Luca; Larcher, Luca; G., Reimbold; B., de Salvo
Experimental assessment of electrons and holes in erase transient of TANOS and TANVaS memories 1-gen-2010 A., Suhane; A., Arreghini; G., Van den bosch; Vandelli, Luca; Padovani, Andrea; L., Breuil; Larcher, Luca; K., De Meyer; J., Van Houdt
Grain boundary-driven leakage path formation in HfO2 dielectrics 1-gen-2011 G., Bersuker; J., Yum; Vandelli, Luca; Padovani, Andrea; Larcher, Luca; V., Iglesias; M., Porti; M., Nafría; K., Mckenna; A., Shluger; P., Kirsch; R., Jammy