We demonstrate the formation of a vertical charge dipole in the nitride layer of TaN/Al2O3/Si3N4/SiO2/Si memories and use dedicated experiments and device simulations to investigate its dependence on program and erase conditions. We show that the polarity of the dipole depends on the program/erase operation sequence and demonstrate that is at the origin of the charge losses observed during retention. This dipole severely affects the retention of mildly programmed and erased states, representing a serious reliability concern especially for multi-level applications.
Evidences for vertical charge dipole formation in charge-trapping memories and its impact on reliability / Padovani, Andrea; A., Arreghini; Vandelli, Luca; Larcher, Luca; G., Van den bosch; J., Van Houdt. - In: APPLIED PHYSICS LETTERS. - ISSN 0003-6951. - ELETTRONICO. - 101:(2012), pp. 053505-1-053505-4. [10.1063/1.4740255]
Evidences for vertical charge dipole formation in charge-trapping memories and its impact on reliability
PADOVANI, ANDREA;VANDELLI, LUCA;LARCHER, Luca;
2012
Abstract
We demonstrate the formation of a vertical charge dipole in the nitride layer of TaN/Al2O3/Si3N4/SiO2/Si memories and use dedicated experiments and device simulations to investigate its dependence on program and erase conditions. We show that the polarity of the dipole depends on the program/erase operation sequence and demonstrate that is at the origin of the charge losses observed during retention. This dipole severely affects the retention of mildly programmed and erased states, representing a serious reliability concern especially for multi-level applications.
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