ItalianoPADOVANI, ANDREA
Pubblicazioni
Risultati 1 - 20 di 122 (tempo di esecuzione: 0.002 secondi).
| Titolo | Data di pubblicazione | Autore(i) | |
|---|---|---|---|
| 1 | A novel Algorithm for the Solution of Charge Transport Equations in MANOS Devices Including Charge Trapping in Alumina and Temperature Effects | 2010 | Padovani, Andrea; Larcher, Luca |
| 2 | A Novel Fluorine Incorporated Band Engineered (BE) Tunnel (SiO2/ HfSiO/ SiO2) TANOS with Excellent Program/Erase & Endurance to 10^5 Cycles | 2009 | S., Verma; G., Bersuker; D. C., Gilmer; Padovani, Andrea; P., Hokyung; A., Nainani; D., Heh; J., Huang; J., Jiang; K., Parat; P. D., Kirsch; Larcher, Luca; Hsing Huang, Tseng; K. C., Saraswat; R., Jammy |
| 3 | A Physical Model for Post-Breakdown Digital Gate Current Noise | 2010 | Padovani, Andrea; Morassi, Luca; N., Raghavan; Larcher, Luca; L., Wenhu; K. L., Pey; G., Bersuker |
| 4 | A technique to extract high-k IPD stack layer thicknesses from C-V measurements | 2009 | Larcher, Luca; Pavan, Paolo; Padovani, Andrea; G., Ghidini |
| 5 | Advanced high-k materials and electrical analysis for memories: the role of SiO2-high-k dielectric intermixing | 2009 | Morassi, Luca; Larcher, Luca; L., Pantisano; Padovani, Andrea; R., Degreave; M. B., Zahid; B. J., O'Sullivan |
| 6 | Advanced modeling and characterization techniques for innovative memory devices: The RRAM case | 2019 | Puglisi, Francesco Maria; Padovani, Andrea; Pavan, Paolo; Larcher, Luca |
| 7 | Analysis of Correlated Gate and Drain Random Telegraph Noise in Post-Soft Breakdown TiN/HfLaO/SiOx nMOSFETs | 2014 | W. H., Liu; Padovani, Andrea; Larcher, Luca; N., Raghavan; K. L., Pey |
| 8 | Analysis of interface-trap effects in inversion-type InGaAs/ZrO2 MOSFETs | 2010 | Morassi, Luca; Verzellesi, Giovanni; Padovani, Andrea; Larcher, Luca; Pavan, Paolo; D., Veksler; Injo, Ok; G., Bersuker |
| 9 | Analysis of RTN and cycling variability in HfO2 RRAM devices in LRS | 2014 | Puglisi, Francesco Maria; Pavan, Paolo; Larcher, Luca; Padovani, Andrea |
| 10 | Anomalous random telegraph noise and temporary phenomena in resistive random access memory | 2016 | Puglisi, Francesco Maria; Larcher, Luca; Padovani, Andrea; Pavan, Paolo |
| 11 | Bipolar Resistive RAM Based on HfO2: Physics, Compact Modeling, and Variability Control | 2016 | Puglisi, Francesco Maria; Larcher, Luca; Padovani, Andrea; Pavan, Paolo |
| 12 | Breakdown in the metal/high-k gate stack: Identifying the “weak link” in the multilayer dielectric | 2008 | G., Bersuker; D., Heh; C., Young; H., Park; P., Khanal; Larcher, Luca; Padovani, Andrea; P., Lenahan; J., Ryan; B. H., Lee; H., Tseng; R., Jammy |
| 13 | Characterization of anomalous Random Telegraph Noise in Resistive Random Access Memory | 2015 | Puglisi, Francesco Maria; Larcher, Luca; Padovani, Andrea; Pavan, Paolo |
| 14 | Charge loss in TANOS devices caused by Vt sensing measurements during retention | 2010 | H., Park; G., Bersuker; D., Gilmer; K. Y., Lim; M., Jo; H., Hwang; Padovani, Andrea; Larcher, Luca; Pavan, Paolo; W., Taylor; P. D., Kirsch |
| 15 | Charge Transport and Degradation in HfO2 and HfOx Dielectrics | 2013 | Padovani, Andrea; Larcher, Luca; Gennadi, Bersuker; Pavan, Paolo |
| 16 | Charge transport in high-k stacks for charge-trapping memory applications: A modeling perspective (invited) | 2011 | Larcher, Luca; Padovani, Andrea; Vandelli, Luca; Pavan, Paolo |
| 17 | Charge trapping in alumina and its impact on the operation of metal-alumina-nitride-oxide-silicon memories: experiments and simulations | 2011 | Padovani, Andrea; Larcher, Luca; DELLA MARCA, Vincenzo; Pavan, Paolo; H., Park; G., Bersuker |
| 18 | A Charge-Trapping Model for the Fast Component of Positive Bias Temperature Instability (PBTI) in High-k Gate-Stacks | 2014 | Vandelli, Luca; Larcher, Luca; Veksler, Dmitry; Padovani, Andrea; Bersuker, Gennadi; Matthews, Kenneth |
| 19 | A Compact Model of Hafnium-Oxide-Based Resistive Random Access Memory | 2013 | Puglisi, Francesco Maria; Pavan, Paolo; Padovani, Andrea; Larcher, Luca |
| 20 | A Compact Model of Program Window in HfOx RRAM Devices for Conductive Filament Characteristics Analysis | 2014 | Larcher, Luca; Puglisi, Francesco Maria; Pavan, Paolo; Padovani, Andrea; Vandelli, Luca; Bersuker, Gennadi |
Dettaglio
PADOVANI, ANDREA
Dipartimento di Scienze e Metodi dell'Ingegneria
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