PADOVANI, ANDREA
PADOVANI, ANDREA
Dipartimento di Ingegneria "Enzo Ferrari"
A Charge-Trapping Model for the Fast Component of Positive Bias Temperature Instability (PBTI) in High-k Gate-Stacks
2014 Vandelli, Luca; Larcher, Luca; Veksler, Dmitry; Padovani, Andrea; Bersuker, Gennadi; Matthews, Kenneth
A Compact Model of Hafnium-Oxide-Based Resistive Random Access Memory
2013 Puglisi, Francesco Maria; Pavan, Paolo; Padovani, Andrea; Larcher, Luca
A Compact Model of Program Window in HfOx RRAM Devices for Conductive Filament Characteristics Analysis
2014 Larcher, Luca; Puglisi, Francesco Maria; Pavan, Paolo; Padovani, Andrea; Vandelli, Luca; Bersuker, Gennadi
A Complete Statistical Investigation of RTN in HfO₂-Based RRAM in High Resistive State
2015 Puglisi, Francesco Maria; Larcher, Luca; Padovani, Andrea; Pavan, Paolo
A Comprehensive Understanding of the Erase of TANOS Memories Through Charge Separation Experiments and Simulations
2011 Padovani, Andrea; A., Arreghini; Vandelli, Luca; Larcher, Luca; G., Van den Bosh; Pavan, Paolo; J., Van Houdt
A HydroDynamic Model for Trap-Assisted Tunneling Conduction in Ovonic Devices
2023 Buscemi, F; Piccinini, E; Vandelli, L; Nardi, F; Padovani, A; Kaczer, B; Garbin, D; Clima, S; Degraeve, R; Kar, Gs; Tavanti, F; Slassi, A; Calzolari, A; Larcher, L
A microscopic mechanism of dielectric breakdown in SiO2films: An insight from multi-scale modeling
2017 Padovani, A.; Gao, D. Z.; Shluger, A. L.; Larcher, L.
A microscopic physical description of RTN current fluctuations in HfOx RRAM
2015 Puglisi, Francesco Maria; Pavan, Paolo; Vandelli, Luca; Padovani, Andrea; Bertocchi, Matteo; Larcher, Luca
A multiscale modeling approach for the simulation of OxRRAM devices
2017 Padovani, A.; Larcher, L.; Woo, J.; Hwang, H.
A novel Algorithm for the Solution of Charge Transport Equations in MANOS Devices Including Charge Trapping in Alumina and Temperature Effects
2010 Padovani, Andrea; Larcher, Luca
A Novel Fluorine Incorporated Band Engineered (BE) Tunnel (SiO2/ HfSiO/ SiO2) TANOS with Excellent Program/Erase & Endurance to 10^5 Cycles
2009 S., Verma; G., Bersuker; D. C., Gilmer; Padovani, Andrea; P., Hokyung; A., Nainani; D., Heh; J., Huang; J., Jiang; K., Parat; P. D., Kirsch; Larcher, Luca; Hsing Huang, Tseng; K. C., Saraswat; R., Jammy
A Physical Model for Post-Breakdown Digital Gate Current Noise
2010 Padovani, Andrea; Morassi, Luca; N., Raghavan; Larcher, Luca; L., Wenhu; K. L., Pey; G., Bersuker
A Physical model of the temperature dependence of the current through SiO2/HfO2 stacks
2011 Vandelli, Luca; Padovani, Andrea; Larcher, Luca; R. G., Southwick III; W. B., Knowlton; G., Bersuker
A Physics-Based Model of the Dielectric Breakdown in HfO2 for Statistical Reliability Prediction
2011 Vandelli, Luca; G., Bersuker; Padovani, Andrea; J. H., Yum; Larcher, Luca; Pavan, Paolo
A Sensitivity Map-Based Approach to Profile Defects in MIM Capacitors From I-V, C-V, and G-V Measurements
2019 Padovani, A.; Kaczer, B.; Pesic, M.; Belmonte, A.; Popovici, M.; Nyns, L.; Linten, D.; Afanas'Ev, V. V.; Shlyakhov, I.; Lee, Y.; Park, H.; Larcher, L.
A simple figure of merit to identify the first layer to degrade and fail in dual layer SiOx/HfO2 gate dielectric stacks
2023 Padovani, Andrea; La Torraca, Paolo
A simulation framework for modeling charge transport and degradation in high-k stacks
2013 Larcher, Luca; Padovani, Andrea; Vandelli, Luca
A study of the leakage current in TiN/HfO2/TiN capacitors
2012 S., Cimino; Padovani, Andrea; Larcher, Luca; V. V., Afanas’Ev; H. J., Hwang; Y. G., Lee; M., Jurczac; D., Wouters; B. H., Lee; H., Hwang; L., Pantisano
A study on HfO2 RRAM in HRS based on I–V and RTN analysis
2014 Puglisi, Francesco Maria; Pavan, Paolo; Padovani, Andrea; Larcher, Luca
A technique to extract high-k IPD stack layer thicknesses from C-V measurements
2009 Larcher, Luca; Pavan, Paolo; Padovani, Andrea; G., Ghidini
Titolo | Data di pubblicazione | Autore(i) | File |
---|---|---|---|
A Charge-Trapping Model for the Fast Component of Positive Bias Temperature Instability (PBTI) in High-k Gate-Stacks | 1-gen-2014 | Vandelli, Luca; Larcher, Luca; Veksler, Dmitry; Padovani, Andrea; Bersuker, Gennadi; Matthews, Kenneth | |
A Compact Model of Hafnium-Oxide-Based Resistive Random Access Memory | 1-gen-2013 | Puglisi, Francesco Maria; Pavan, Paolo; Padovani, Andrea; Larcher, Luca | |
A Compact Model of Program Window in HfOx RRAM Devices for Conductive Filament Characteristics Analysis | 1-gen-2014 | Larcher, Luca; Puglisi, Francesco Maria; Pavan, Paolo; Padovani, Andrea; Vandelli, Luca; Bersuker, Gennadi | |
A Complete Statistical Investigation of RTN in HfO₂-Based RRAM in High Resistive State | 1-gen-2015 | Puglisi, Francesco Maria; Larcher, Luca; Padovani, Andrea; Pavan, Paolo | |
A Comprehensive Understanding of the Erase of TANOS Memories Through Charge Separation Experiments and Simulations | 1-gen-2011 | Padovani, Andrea; A., Arreghini; Vandelli, Luca; Larcher, Luca; G., Van den Bosh; Pavan, Paolo; J., Van Houdt | |
A HydroDynamic Model for Trap-Assisted Tunneling Conduction in Ovonic Devices | 1-gen-2023 | Buscemi, F; Piccinini, E; Vandelli, L; Nardi, F; Padovani, A; Kaczer, B; Garbin, D; Clima, S; Degraeve, R; Kar, Gs; Tavanti, F; Slassi, A; Calzolari, A; Larcher, L | |
A microscopic mechanism of dielectric breakdown in SiO2films: An insight from multi-scale modeling | 1-gen-2017 | Padovani, A.; Gao, D. Z.; Shluger, A. L.; Larcher, L. | |
A microscopic physical description of RTN current fluctuations in HfOx RRAM | 1-gen-2015 | Puglisi, Francesco Maria; Pavan, Paolo; Vandelli, Luca; Padovani, Andrea; Bertocchi, Matteo; Larcher, Luca | |
A multiscale modeling approach for the simulation of OxRRAM devices | 1-gen-2017 | Padovani, A.; Larcher, L.; Woo, J.; Hwang, H. | |
A novel Algorithm for the Solution of Charge Transport Equations in MANOS Devices Including Charge Trapping in Alumina and Temperature Effects | 1-gen-2010 | Padovani, Andrea; Larcher, Luca | |
A Novel Fluorine Incorporated Band Engineered (BE) Tunnel (SiO2/ HfSiO/ SiO2) TANOS with Excellent Program/Erase & Endurance to 10^5 Cycles | 1-gen-2009 | S., Verma; G., Bersuker; D. C., Gilmer; Padovani, Andrea; P., Hokyung; A., Nainani; D., Heh; J., Huang; J., Jiang; K., Parat; P. D., Kirsch; Larcher, Luca; Hsing Huang, Tseng; K. C., Saraswat; R., Jammy | |
A Physical Model for Post-Breakdown Digital Gate Current Noise | 1-gen-2010 | Padovani, Andrea; Morassi, Luca; N., Raghavan; Larcher, Luca; L., Wenhu; K. L., Pey; G., Bersuker | |
A Physical model of the temperature dependence of the current through SiO2/HfO2 stacks | 1-gen-2011 | Vandelli, Luca; Padovani, Andrea; Larcher, Luca; R. G., Southwick III; W. B., Knowlton; G., Bersuker | |
A Physics-Based Model of the Dielectric Breakdown in HfO2 for Statistical Reliability Prediction | 1-gen-2011 | Vandelli, Luca; G., Bersuker; Padovani, Andrea; J. H., Yum; Larcher, Luca; Pavan, Paolo | |
A Sensitivity Map-Based Approach to Profile Defects in MIM Capacitors From I-V, C-V, and G-V Measurements | 1-gen-2019 | Padovani, A.; Kaczer, B.; Pesic, M.; Belmonte, A.; Popovici, M.; Nyns, L.; Linten, D.; Afanas'Ev, V. V.; Shlyakhov, I.; Lee, Y.; Park, H.; Larcher, L. | |
A simple figure of merit to identify the first layer to degrade and fail in dual layer SiOx/HfO2 gate dielectric stacks | 1-gen-2023 | Padovani, Andrea; La Torraca, Paolo | |
A simulation framework for modeling charge transport and degradation in high-k stacks | 1-gen-2013 | Larcher, Luca; Padovani, Andrea; Vandelli, Luca | |
A study of the leakage current in TiN/HfO2/TiN capacitors | 1-gen-2012 | S., Cimino; Padovani, Andrea; Larcher, Luca; V. V., Afanas’Ev; H. J., Hwang; Y. G., Lee; M., Jurczac; D., Wouters; B. H., Lee; H., Hwang; L., Pantisano | |
A study on HfO2 RRAM in HRS based on I–V and RTN analysis | 1-gen-2014 | Puglisi, Francesco Maria; Pavan, Paolo; Padovani, Andrea; Larcher, Luca | |
A technique to extract high-k IPD stack layer thicknesses from C-V measurements | 1-gen-2009 | Larcher, Luca; Pavan, Paolo; Padovani, Andrea; G., Ghidini |