EnglishPADOVANI, ANDREA
Risultati 1 - 20 di 121 (tempo di esecuzione: 0.0 secondi).
| Titolo | Data di pubblicazione | Autore(i) | |
|---|---|---|---|
| 1 | Understanding the Role of the Ti Metal Electrode on the Forming of HfO2-based RRAMs | 2012 | Padovani, Andrea; Larcher, Luca; Pavan, Paolo; C., Cagli; B., de Salvo |
| 2 | Understanding endurance degradation in Flash memory through transconductance measurement | 2009 | S., Verma; G., Bersuker; D. C., Gilmer; Padovani, Andrea; H., Park; A., Nainani; J., Huang; K., Parat; P. D., Kirsch; Larcher, Luca; H. H., Tseng; K. C. Saraswat R., Jammy |
| 3 | Threshold Shift Observed in Resistive Switching in Metal-Oxide-Semiconductor Transistors and the Effect of Forming Gas Anneal | 2011 | W. H., Liu; K. L., Pey; X., Wu; N., Raghavan; Padovani, Andrea; Larcher, Luca; Vandelli, Luca; M., Bosman; T., Kauerauf |
| 4 | The "Buffering" Role of High-k in Post Breakdown Degradation Immunity of Advanced Dual Layer Dielectric Gate Stacks | 2013 | N., Raghavan; Padovani, Andrea; X., Wu; K., Shubhakar; M., Bosman; Larcher, Luca; K. L., Pey |
| 5 | Temperature Monitor: a New Tool to Profile Charge Distribution in NROMTM Memory Devices | 2006 | L., Avital; Padovani, Andrea; Larcher, Luca; I., Bloom; R., Arie; Pavan, Paolo; B., Eitan |
| 6 | Temperature impact (up to 200 °C) on performance and reliability of HfO2-based RRAMs | 2013 | T., Cabout; L., Perniola; V., Jousseaume; H., Grampeix; J. F., Nodin; A., Toffoli; E., Jalaguier; E., Vianello; G., Molas; G., Reimbold; B., De Salvo; Pirrotta, Onofrio; Padovani, Andrea; Larcher, Luca; T., Diokh; P., Candelier; M., Guillermet; M., Bocquet; C., Muller |
| 7 | Temperature Effects on Metal-Alumina-Nitride-Oxide-Silicon Memory Operations | 2010 | Padovani, Andrea; Larcher, Luca; D., Heh; G., Bersuker; V., Dellamarca; Pavan, Paolo |
| 8 | A study on HfO2 RRAM in HRS based on I–V and RTN analysis | 2014 | Puglisi, Francesco Maria; Pavan, Paolo; Padovani, Andrea; Larcher, Luca |
| 9 | A study of the leakage current in TiN/HfO2/TiN capacitors | 2012 | S., Cimino; Padovani, Andrea; Larcher, Luca; V. V., Afanas’Ev; H. J., Hwang; Y. G., Lee; M., Jurczac; D., Wouters; B. H., Lee; H., Hwang; L., Pantisano |
| 10 | Study of the Impact of Interface Traps on the Electrical Characteristics of InGaAs-based MOSFETs and MOSHEMTs with high-k Gate Dielectrics | 2010 | Morassi, Luca; Padovani, Andrea; Verzellesi, Giovanni; D., Veksler; I., Ok; G., Bersuker |
| 11 | Statistical modeling of leakage currents through SiO2/high-k dielectric stacks for non-volatile memory applications | 2008 | Padovani, Andrea; Larcher, Luca; S., Verma; Pavan, Paolo; P., Majhi; P., Kapur; K., Parat; G., Bersuker; K., Saraswat |
| 12 | Statistical Methodologies for Integrated Circuits Design | 2007 | Padovani, Andrea; A., Chimenton; P., Olivo; P., Fantini; L., Vendrame; S., Mennillo |
| 13 | Statistical analysis of random telegraph noise in HfO2-based RRAM devices in LRS | 2015 | Puglisi, Francesco Maria; Pavan, Paolo; Larcher, Luca; Padovani, Andrea |
| 14 | Single vacancy defect spectroscopy on HfO2 using random telegraph noise signals from scanning tunneling microscopy | 2016 | Thamankar, R.; Raghavan, N.; Molina, J.; Puglisi, Francesco Maria; O'Shea, S. J.; Shubhakar, K.; Larcher, Luca; Pavan, Paolo; Padovani, Andrea; Pey, K. L. |
| 15 | A simulation framework for modeling charge transport and degradation in high-k stacks | 2013 | Larcher, Luca; Padovani, Andrea; Vandelli, Luca |
| 16 | SET switching effects on PCM endurance | 2010 | V., Della Marca; F., Carboni; Larcher, Luca; Padovani, Andrea; Pavan, Paolo |
| 17 | Self-rectifying behavior and analog switching under identical pulses using Tri-layer RRAM crossbar array for neuromorphic systems | 2017 | Alayan, M.; Vianello, E.; Larcher, L.; Padovani, A.; Levisse, A.; Castellani, N.; Charpin, C.; Bernasconi, S.; Molas, G.; Portal, J. M.; De Salvo, B.; Perniola, L. |
| 18 | Scaling perspective and reliability of conductive filament formation in ultra-scaled HfO2 Resistive Random Access Memory | 2017 | Puglisi, Francesco Maria; Celano, Umberto; Padovani, Andrea; Vandervorst, Wilfried; Larcher, Luca; Pavan, Paolo |
| 19 | RTS Noise Characterization of HfOx RRAM in High Resistive State | 2013 | Puglisi, Francesco Maria; Pavan, Paolo; Padovani, Andrea; Larcher, Luca; G., Bersuker |
| 20 | Root cause of degradation in novel HfO2-based ferroelectric memories | 2016 | Pesic, Milan; Fengler, Franz P. G.; Slesazeck, Stefan; Schroeder, Uwe; Mikolajick, Thomas; Larcher, Luca; Padovani, Andrea |
Nome completo:
PADOVANI, ANDREA
settore SSD:
Settore ING-INF/01 - Elettronica
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