EnglishPADOVANI, ANDREA
Risultati 1 - 20 di 120 (tempo di esecuzione: 0.001 secondi).
| Titolo | Data di pubblicazione | Autore(i) | |
|---|---|---|---|
| 1 | Understanding the Role of the Ti Metal Electrode on the Forming of HfO2-based RRAMs | 2012 | Padovani, Andrea; Larcher, Luca; Pavan, Paolo; Cagli, C.; de Salvo, B. |
| 2 | Understanding endurance degradation in Flash memory through transconductance measurement | 2009 | S. Verma; G. Bersuker; D. C. Gilmer; A. Padovani; H. Park; A. Nainani; J. Huang; K. Parat; P. D. Kirsch; L. Larcher; H.-H. Tseng; K. C. Saraswat R. Jammy |
| 3 | Threshold Shift Observed in Resistive Switching in Metal-Oxide-Semiconductor Transistors and the Effect of Forming Gas Anneal | 2011 | W.H. Liu; K.L. Pey; X. Wu; N. Raghavan; A. Padovani; L. Larcher; L. Vandelli; M. Bosman; T. Kauerauf |
| 4 | The "Buffering" Role of High-k in Post Breakdown Degradation Immunity of Advanced Dual Layer Dielectric Gate Stacks | 2013 | N. Raghavan; A. Padovani; X. Wu; K. Shubhakar; M. Bosman; L. Larcher; K.L. Pey |
| 5 | Temperature Monitor: a New Tool to Profile Charge Distribution in NROMTM Memory Devices | 2006 | L. AVITAL; A. PADOVANI; L. LARCHER; I. BLOOM; R. ARIE; P. PAVAN; B. EITAN |
| 6 | Temperature impact (up to 200 °C) on performance and reliability of HfO2-based RRAMs | 2013 | T. Cabout; L. Perniola; V. Jousseaume; H. Grampeix; J.F. Nodin; A. Toffoli; E. Jalaguier; E. Vianello; G. Molas; G. Reimbold; B. De Salvo; O. Pirrotta; A. Padovani; L. Larcher; T. Diokh; P. Candelier; M.Guillermet; M. Bocquet; C. Muller |
| 7 | Temperature Effects on Metal-Alumina-Nitride-Oxide-Silicon Memory Operations | 2010 | Padovani, Andrea; Larcher, Luca; Heh, D.; Bersuker, G.; Dellamarca, V.; Pavan, Paolo |
| 8 | A study on HfO2 RRAM in HRS based on I–V and RTN analysis | 2014 | Puglisi, Francesco M.; Pavan, Paolo; Padovani, Andrea; Larcher, Luca |
| 9 | A study of the leakage current in TiN/HfO2/TiN capacitors | 2012 | S. Cimino; A. Padovani; L. Larcher; V.V. Afanas’ev; H.J. Hwang; Y.G. Lee; M. Jurczac; D. Wouters; B.H. Lee; H. Hwang; L. Pantisano |
| 10 | Study of the Impact of Interface Traps on the Electrical Characteristics of InGaAs-based MOSFETs and MOSHEMTs with high-k Gate Dielectrics | 2010 | L. Morassi; A. Padovani; G. Verzellesi; D. Veksler; I. Ok; G.Bersuker |
| 11 | Statistical modeling of leakage currents through SiO2/high-k dielectric stacks for non-volatile memory applications | 2008 | A. Padovani; L. Larcher; S. Verma; P. Pavan; P. Majhi; P. Kapur; K. Parat; G. Bersuker; K. Saraswat |
| 12 | Statistical Methodologies for Integrated Circuits Design | 2007 | A. Padovani; A. Chimenton; P. Olivo; P. Fantini; L. Vendrame; and S. Mennillo |
| 13 | Statistical analysis of random telegraph noise in HfO2-based RRAM devices in LRS | 2015 | Puglisi, Francesco Maria; Pavan, Paolo; Larcher, Luca; Padovani, Andrea |
| 14 | Single vacancy defect spectroscopy on HfO2 using random telegraph noise signals from scanning tunneling microscopy | 2016 | Thamankar, R.; Raghavan, N.; Molina, J.; Puglisi, Francesco Maria; O'Shea, S. J.; Shubhakar, K.; Larcher, Luca; Pavan, Paolo; Padovani, Andrea; Pey, K. L. |
| 15 | A simulation framework for modeling charge transport and degradation in high-k stacks | 2013 | L. Larcher; A. Padovani; L. Vandelli |
| 16 | SET switching effects on PCM endurance | 2010 | Della Marca, V.; Carboni, F.; Larcher, Luca; Padovani, Andrea; Pavan, Paolo |
| 17 | Self-rectifying behavior and analog switching under identical pulses using Tri-layer RRAM crossbar array for neuromorphic systems | 2017 | Alayan, M.; Vianello, E.; Larcher, L.; Padovani, A.; Levisse, A.; Castellani, N.; Charpin, C.; Bernasconi, S.; Molas, G.; Portal, J. M.; De Salvo, B.; Perniola, L. |
| 18 | Scaling perspective and reliability of conductive filament formation in ultra-scaled HfO2 Resistive Random Access Memory | 2017 | Puglisi, Francesco Maria; Celano, Umberto; Padovani, Andrea; Vandervorst, Wilfried; Larcher, Luca; Pavan, Paolo |
| 19 | RTS Noise Characterization of HfOx RRAM in High Resistive State | 2013 | F. M. Puglisi; P. Pavan; A. Padovani; L. Larcher; G. Bersuker |
| 20 | Root cause of degradation in novel HfO2-based ferroelectric memories | 2016 | Pesic, Milan; Fengler, Franz P. G.; Slesazeck, Stefan; Schroeder, Uwe; Mikolajick, Thomas; Larcher, Luca; Padovani, Andrea |
Nome completo:
PADOVANI, ANDREA
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