In this paper, a compact model of hafnium-oxide-based resistive random access memory (RRAM) cell is developed. The proposed model includes the effect of the temperature and cycle-to-cycle stochastic variations affecting the device operations. Simple I-V measurements are used to extract the model parameters. The model accurately reproduces the I-V curves of the switching cycles in different operating conditions.
A Compact Model of Hafnium-Oxide-Based Resistive Random Access Memory / Puglisi, Francesco Maria; Pavan, Paolo; Padovani, Andrea; Larcher, Luca. - ELETTRONICO. - (2013), pp. 85-88. (Intervento presentato al convegno 2013 International Conference on IC Design and Technology, ICICDT 2013 tenutosi a Pavia, Italy nel 29 - 31 May, 2013) [10.1109/ICICDT.2013.6563309].
A Compact Model of Hafnium-Oxide-Based Resistive Random Access Memory
PUGLISI, Francesco Maria;PAVAN, Paolo;PADOVANI, ANDREA;LARCHER, Luca
2013-01-01
Abstract
In this paper, a compact model of hafnium-oxide-based resistive random access memory (RRAM) cell is developed. The proposed model includes the effect of the temperature and cycle-to-cycle stochastic variations affecting the device operations. Simple I-V measurements are used to extract the model parameters. The model accurately reproduces the I-V curves of the switching cycles in different operating conditions.
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