PUGLISI, Francesco Maria

PUGLISI, Francesco Maria  

Dipartimento di Ingegneria "Enzo Ferrari"  

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Risultati 1 - 20 di 123 (tempo di esecuzione: 0.055 secondi).
Titolo Data di pubblicazione Autore(i) File
2D h-BN based RRAM devices 1-gen-2016 Puglisi, Francesco Maria; Larcher, Luca; Pan, C.; Xiao, N.; Shi, Y.; Hui, F.; Lanza, M.
A Compact Model of Hafnium-Oxide-Based Resistive Random Access Memory 1-gen-2013 Puglisi, Francesco Maria; Pavan, Paolo; Padovani, Andrea; Larcher, Luca
A Compact Model of Program Window in HfOx RRAM Devices for Conductive Filament Characteristics Analysis 1-gen-2014 Larcher, Luca; Puglisi, Francesco Maria; Pavan, Paolo; Padovani, Andrea; Vandelli, Luca; Bersuker, Gennadi
A Complete Statistical Investigation of RTN in HfO₂-Based RRAM in High Resistive State 1-gen-2015 Puglisi, Francesco Maria; Larcher, Luca; Padovani, Andrea; Pavan, Paolo
A consistent picture of cycling dispersion of resistive states in HfOx resistive random access memory 1-gen-2016 Puglisi, Francesco Maria; Pavan, Paolo
A Hybrid CMOS-Memristor Spiking Neural Network Supporting Multiple Learning Rules 1-gen-2022 Florini, Davide; Gandolfi, Daniela; Mapelli, Jonathan; Benatti, Lorenzo; Pavan, Paolo; Puglisi, Francesco Maria
A microscopic physical description of RTN current fluctuations in HfOx RRAM 1-gen-2015 Puglisi, Francesco Maria; Pavan, Paolo; Vandelli, Luca; Padovani, Andrea; Bertocchi, Matteo; Larcher, Luca
A multi-scale methodology connecting device physics to compact models and circuit applications for OxRAM technology 1-gen-2016 Puglisi, Francesco Maria; Deleruyelle, Damien; Portal, Jean Michel; Pavan, Paolo; Larcher, Luca
A new verilog-A compact model of random telegraph noise in oxide-based RRAM for advanced circuit design 1-gen-2017 Puglisi, Francesco Maria; Zagni, Nicolo'; Larcher, Luca; Pavan, Paolo
A Novel Program-Verify Algorithm for Multi-Bit Operation in HfO2 RRAM 1-gen-2015 Puglisi, Francesco Maria; Wenger, C.; Pavan, Paolo
A study on HfO2 RRAM in HRS based on I–V and RTN analysis 1-gen-2014 Puglisi, Francesco Maria; Pavan, Paolo; Padovani, Andrea; Larcher, Luca
A Unified Framework to Explain Random Telegraph Noise Complexity in MOSFETs and RRAMs 1-gen-2023 Vecchi, S.; Pavan, P.; Puglisi, F. M.
Advanced Data Encryption ​using 2D Materials 1-gen-2021 Wen, Chao; Li, Xuehua; Zanotti, Tommaso; Puglisi, Francesco Maria; Shi, Yuanyuan; Saiz, Fernan; Antidormi, Aleandro; Roche, Stephan; Zheng, Wenwen; Liang, Xianhu; Hu, Jiaxin; Duhm, Steffen; Roldan, Juan B.; Wu, Tianru; Chen, Victoria; Pop, Eric; Garrido, Blas; Zhu, Kaichen; Hui, Fei; Lanza, Mario
Advanced modeling and characterization techniques for innovative memory devices: The RRAM case 1-gen-2019 Puglisi, Francesco Maria; Padovani, Andrea; Pavan, Paolo; Larcher, Luca
An Empirical Model for RRAM Resistance in Low- and High-Resistance State 1-gen-2013 Puglisi, Francesco Maria; Larcher, Luca; G., Bersuker; Padovani, Andrea; Pavan, Paolo
An investigation on the role of current compliance in HfO2-based RRAM in HRS using RTN and I-V data 1-gen-2014 Puglisi, Francesco Maria; Pavan, Paolo
Analysis of RTN and cycling variability in HfO2 RRAM devices in LRS 1-gen-2014 Puglisi, Francesco Maria; Pavan, Paolo; Larcher, Luca; Padovani, Andrea
Anomalous random telegraph noise and temporary phenomena in resistive random access memory 1-gen-2016 Puglisi, Francesco Maria; Larcher, Luca; Padovani, Andrea; Pavan, Paolo
Biologically Plausible Information Propagation in a CMOS Integrate-and-Fire Artificial Neuron Circuit with Memristive Synapses 1-gen-2023 Benatti, Lorenzo; Zanotti, Tommaso; Gandolfi, Daniela; Mapelli, Jonathan; Puglisi, Francesco Maria
Bipolar Resistive RAM Based on HfO2: Physics, Compact Modeling, and Variability Control 1-gen-2016 Puglisi, Francesco Maria; Larcher, Luca; Padovani, Andrea; Pavan, Paolo