PUGLISI, Francesco Maria

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Dipartimento di Ingegneria "Enzo Ferrari"

Pubblicazioni

Risultati 1 - 20 di 87 (tempo di esecuzione: 0.0 secondi).

	Titolo	Data di pubblicazione	Autore(i)
1	2D h-BN based RRAM devices	2016	Puglisi, Francesco Maria; Larcher, Luca; Pan, C.; Xiao, N.; Shi, Y.; Hui, F.; Lanza, M.
2	Advanced modeling and characterization techniques for innovative memory devices: The RRAM case	2019	Puglisi, Francesco Maria; Padovani, Andrea; Pavan, Paolo; Larcher, Luca
3	Analysis of RTN and cycling variability in HfO2 RRAM devices in LRS	2014	Puglisi, Francesco Maria; Pavan, Paolo; Larcher, Luca; Padovani, Andrea
4	Anomalous random telegraph noise and temporary phenomena in resistive random access memory	2016	Puglisi, Francesco Maria; Larcher, Luca; Padovani, Andrea; Pavan, Paolo
5	Bipolar Resistive RAM Based on HfO2: Physics, Compact Modeling, and Variability Control	2016	Puglisi, Francesco Maria; Larcher, Luca; Padovani, Andrea; Pavan, Paolo
6	Boron Vacancies Causing Breakdown in 2D Layered Hexagonal Boron Nitride Dielectrics	2019	Ranjan, A.; Raghavan, N.; Puglisi, F. M.; Mei, S.; Padovani, A.; Larcher, L.; Shubhakar, K.; Pavan, P.; Bosman, M.; Zhang, X. X.; O'Shea, S. J.; Pey, K. L.
7	Characterization and TCAD Modeling of Mixed-Mode Stress Induced by Impact Ionization in Scaled SiGe HBTs	2020	Zagni, Nicolo; Puglisi, Francesco Maria; Verzellesi, Giovanni; Pavan, Paolo
8	Characterization of anomalous Random Telegraph Noise in Resistive Random Access Memory	2015	Puglisi, Francesco Maria; Larcher, Luca; Padovani, Andrea; Pavan, Paolo
9	Chemical vapor deposition of hexagonal boron nitride on metal-coated wafers and transfer-free fabrication of resistive switching devices	2019	Jing, X.; Puglisi, F.; Akinwande, D.; Lanza, M.
10	Circuit Reliability Analysis of In-Memory Inference in Binarized Neural Networks	2020	Zanotti, Tommaso; Puglisi, Francesco Maria; Pavan, Paolo
11	Circuit Reliability Analysis of RRAM-based Logic-in-Memory Crossbar Architectures Including Line Parasitic Effects, Variability, and Random Telegraph Noise	2020	Zanotti, T.; Puglisi, F. M.; Pavan, P.
12	Circuit reliability of low-power rram-based logic-in-memory architectures	2019	Zanotti, T.; Puglisi, F. M.; Pavan, P.
13	Coexistence of Grain‐Boundaries‐Assisted Bipolar and Threshold Resistive Switching in Multilayer Hexagonal Boron Nitride	2017	Pan, Chengbin; Ji, Yanfeng; Xiao, Na; Hui, Fei; Tang, Kechao; Guo, Yuzheng; Xie, Xiaoming; Puglisi, Francesco Maria; Larcher, Luca; Miranda, Enrique; Jiang, Lanlan; Shi, Yuanyuan; Valov, Ilia; Mcintyre, Paul; Waser, Rainer; Lanza, Mario
14	Coexistence of volatile and non-volatile resistive switching in 2D h-BN based electronic synapses	2018	Shi, Y.; Pan, C.; Chen, V.; Raghavan, N.; Pey, K. L.; Puglisi, F. M.; Pop, E.; Wong, H. -S. P.; Lanza, M.
15	Combined variability/sensitivity analysis in III-V and silicon FETs for future technological nodes	2017	Zagni, Nicolo'; Puglisi, Francesco Maria; Verzellesi, Giovanni; Pavan, Paolo
16	A Compact Model of Hafnium-Oxide-Based Resistive Random Access Memory	2013	Puglisi, Francesco Maria; Pavan, Paolo; Padovani, Andrea; Larcher, Luca
17	A Compact Model of Program Window in HfOx RRAM Devices for Conductive Filament Characteristics Analysis	2014	Larcher, Luca; Puglisi, Francesco Maria; Pavan, Paolo; Padovani, Andrea; Vandelli, Luca; Bersuker, Gennadi
18	A Complete Statistical Investigation of RTN in HfO₂-Based RRAM in High Resistive State	2015	Puglisi, Francesco Maria; Larcher, Luca; Padovani, Andrea; Pavan, Paolo
19	A consistent picture of cycling dispersion of resistive states in HfOx resistive random access memory	2016	Puglisi, Francesco Maria; Pavan, Paolo
20	Defect density evaluation in a high-k MOSFET gate stack combining experimental and modeling methods	2014	Puglisi, Francesco Maria; Veksler, D.; Matthews, K.; Bersuker, G.; Larcher, Luca; Padovani, Andrea; Vandelli, Luca; Pavan, Paolo