ItalianoPUGLISI, Francesco Maria
Dettaglio
PUGLISI, Francesco Maria
Dipartimento di Ingegneria "Enzo Ferrari"
Pubblicazioni
Risultati 1 - 20 di 103 (tempo di esecuzione: 0.0 secondi).
| Titolo | Data di pubblicazione | Autore(i) | |
|---|---|---|---|
| 1 | 2D h-BN based RRAM devices | 2016 | Puglisi, Francesco Maria; Larcher, Luca; Pan, C.; Xiao, N.; Shi, Y.; Hui, F.; Lanza, M. |
| 2 | Advanced Data Encryption using 2D Materials | 2021 | Wen, Chao; Li, Xuehua; Zanotti, Tommaso; Puglisi, Francesco Maria; Shi, Yuanyuan; Saiz, Fernan; Antidormi, Aleandro; Roche, Stephan; Zheng, Wenwen; Liang, Xianhu; Hu, Jiaxin; Duhm, Steffen; Roldan, Juan B.; Wu, Tianru; Chen, Victoria; Pop, Eric; Garrido, Blas; Zhu, Kaichen; Hui, Fei; Lanza, Mario |
| 3 | Advanced modeling and characterization techniques for innovative memory devices: The RRAM case | 2019 | Puglisi, Francesco Maria; Padovani, Andrea; Pavan, Paolo; Larcher, Luca |
| 4 | Analysis of RTN and cycling variability in HfO2 RRAM devices in LRS | 2014 | Puglisi, Francesco Maria; Pavan, Paolo; Larcher, Luca; Padovani, Andrea |
| 5 | Anomalous random telegraph noise and temporary phenomena in resistive random access memory | 2016 | Puglisi, Francesco Maria; Larcher, Luca; Padovani, Andrea; Pavan, Paolo |
| 6 | Bipolar Resistive RAM Based on HfO2: Physics, Compact Modeling, and Variability Control | 2016 | Puglisi, Francesco Maria; Larcher, Luca; Padovani, Andrea; Pavan, Paolo |
| 7 | Boron Vacancies Causing Breakdown in 2D Layered Hexagonal Boron Nitride Dielectrics | 2019 | Ranjan, A.; Raghavan, N.; Puglisi, F. M.; Mei, S.; Padovani, A.; Larcher, L.; Shubhakar, K.; Pavan, P.; Bosman, M.; Zhang, X. X.; O'Shea, S. J.; Pey, K. L. |
| 8 | Characterization and TCAD Modeling of Mixed-Mode Stress Induced by Impact Ionization in Scaled SiGe HBTs | 2020 | Zagni, Nicolo; Puglisi, Francesco Maria; Verzellesi, Giovanni; Pavan, Paolo |
| 9 | Characterization of anomalous Random Telegraph Noise in Resistive Random Access Memory | 2015 | Puglisi, Francesco Maria; Larcher, Luca; Padovani, Andrea; Pavan, Paolo |
| 10 | Chemical vapor deposition of hexagonal boron nitride on metal-coated wafers and transfer-free fabrication of resistive switching devices | 2019 | Jing, X.; Puglisi, F.; Akinwande, D.; Lanza, M. |
| 11 | Circuit Reliability Analysis of In-Memory Inference in Binarized Neural Networks | 2020 | Zanotti, Tommaso; Puglisi, Francesco Maria; Pavan, Paolo |
| 12 | Circuit Reliability Analysis of RRAM-based Logic-in-Memory Crossbar Architectures Including Line Parasitic Effects, Variability, and Random Telegraph Noise | 2020 | Zanotti, T.; Puglisi, F. M.; Pavan, P. |
| 13 | Circuit reliability of low-power rram-based logic-in-memory architectures | 2019 | Zanotti, T.; Puglisi, F. M.; Pavan, P. |
| 14 | Coexistence of Grain‐Boundaries‐Assisted Bipolar and Threshold Resistive Switching in Multilayer Hexagonal Boron Nitride | 2017 | Pan, Chengbin; Ji, Yanfeng; Xiao, Na; Hui, Fei; Tang, Kechao; Guo, Yuzheng; Xie, Xiaoming; Puglisi, Francesco Maria; Larcher, Luca; Miranda, Enrique; Jiang, Lanlan; Shi, Yuanyuan; Valov, Ilia; Mcintyre, Paul; Waser, Rainer; Lanza, Mario |
| 15 | Coexistence of volatile and non-volatile resistive switching in 2D h-BN based electronic synapses | 2018 | Shi, Y.; Pan, C.; Chen, V.; Raghavan, N.; Pey, K. L.; Puglisi, F. M.; Pop, E.; Wong, H. -S. P.; Lanza, M. |
| 16 | Combined variability/sensitivity analysis in III-V and silicon FETs for future technological nodes | 2017 | Zagni, Nicolo'; Puglisi, Francesco Maria; Verzellesi, Giovanni; Pavan, Paolo |
| 17 | A Compact Model of Hafnium-Oxide-Based Resistive Random Access Memory | 2013 | Puglisi, Francesco Maria; Pavan, Paolo; Padovani, Andrea; Larcher, Luca |
| 18 | A Compact Model of Program Window in HfOx RRAM Devices for Conductive Filament Characteristics Analysis | 2014 | Larcher, Luca; Puglisi, Francesco Maria; Pavan, Paolo; Padovani, Andrea; Vandelli, Luca; Bersuker, Gennadi |
| 19 | A Complete Statistical Investigation of RTN in HfO₂-Based RRAM in High Resistive State | 2015 | Puglisi, Francesco Maria; Larcher, Luca; Padovani, Andrea; Pavan, Paolo |
| 20 | A consistent picture of cycling dispersion of resistive states in HfOx resistive random access memory | 2016 | Puglisi, Francesco Maria; Pavan, Paolo |
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