PUGLISI, Francesco Maria

PUGLISI, Francesco Maria  

Dipartimento di Ingegneria "Enzo Ferrari"  

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Risultati 1 - 20 di 111 (tempo di esecuzione: 0.035 secondi).
Titolo Data di pubblicazione Autore(i) File
2D h-BN based RRAM devices 1-gen-2016 Puglisi, Francesco Maria; Larcher, Luca; Pan, C.; Xiao, N.; Shi, Y.; Hui, F.; Lanza, M.
A microscopic physical description of RTN current fluctuations in HfOx RRAM 1-gen-2015 Puglisi, Francesco Maria; Pavan, Paolo; Vandelli, Luca; Padovani, Andrea; Bertocchi, Matteo; Larcher, Luca
Advanced Data Encryption ​using 2D Materials 1-gen-2021 Wen, Chao; Li, Xuehua; Zanotti, Tommaso; Puglisi, Francesco Maria; Shi, Yuanyuan; Saiz, Fernan; Antidormi, Aleandro; Roche, Stephan; Zheng, Wenwen; Liang, Xianhu; Hu, Jiaxin; Duhm, Steffen; Roldan, Juan B.; Wu, Tianru; Chen, Victoria; Pop, Eric; Garrido, Blas; Zhu, Kaichen; Hui, Fei; Lanza, Mario
Advanced modeling and characterization techniques for innovative memory devices: The RRAM case 1-gen-2019 Puglisi, Francesco Maria; Padovani, Andrea; Pavan, Paolo; Larcher, Luca
Analysis of RTN and cycling variability in HfO2 RRAM devices in LRS 1-gen-2014 Puglisi, Francesco Maria; Pavan, Paolo; Larcher, Luca; Padovani, Andrea
Anomalous random telegraph noise and temporary phenomena in resistive random access memory 1-gen-2016 Puglisi, Francesco Maria; Larcher, Luca; Padovani, Andrea; Pavan, Paolo
Bipolar Resistive RAM Based on HfO2: Physics, Compact Modeling, and Variability Control 1-gen-2016 Puglisi, Francesco Maria; Larcher, Luca; Padovani, Andrea; Pavan, Paolo
Boron Vacancies Causing Breakdown in 2D Layered Hexagonal Boron Nitride Dielectrics 1-gen-2019 Ranjan, A.; Raghavan, N.; Puglisi, F. M.; Mei, S.; Padovani, A.; Larcher, L.; Shubhakar, K.; Pavan, P.; Bosman, M.; Zhang, X. X.; O'Shea, S. J.; Pey, K. L.
Characterization and TCAD Modeling of Mixed-Mode Stress Induced by Impact Ionization in Scaled SiGe HBTs 1-gen-2020 Zagni, Nicolo; Puglisi, Francesco Maria; Verzellesi, Giovanni; Pavan, Paolo
Characterization of anomalous Random Telegraph Noise in Resistive Random Access Memory 1-gen-2015 Puglisi, Francesco Maria; Larcher, Luca; Padovani, Andrea; Pavan, Paolo
Chemical vapor deposition of hexagonal boron nitride on metal-coated wafers and transfer-free fabrication of resistive switching devices 1-gen-2019 Jing, X.; Puglisi, F.; Akinwande, D.; Lanza, M.
Circuit Reliability Analysis of In-Memory Inference in Binarized Neural Networks 1-gen-2020 Zanotti, Tommaso; Puglisi, Francesco Maria; Pavan, Paolo
Circuit Reliability Analysis of RRAM-based Logic-in-Memory Crossbar Architectures Including Line Parasitic Effects, Variability, and Random Telegraph Noise 1-gen-2020 Zanotti, T.; Puglisi, F. M.; Pavan, P.
Circuit reliability of low-power rram-based logic-in-memory architectures 1-gen-2019 Zanotti, T.; Puglisi, F. M.; Pavan, P.
Coexistence of Grain‐Boundaries‐Assisted Bipolar and Threshold Resistive Switching in Multilayer Hexagonal Boron Nitride 1-gen-2017 Pan, Chengbin; Ji, Yanfeng; Xiao, Na; Hui, Fei; Tang, Kechao; Guo, Yuzheng; Xie, Xiaoming; Puglisi, Francesco Maria; Larcher, Luca; Miranda, Enrique; Jiang, Lanlan; Shi, Yuanyuan; Valov, Ilia; Mcintyre, Paul; Waser, Rainer; Lanza, Mario
Coexistence of volatile and non-volatile resistive switching in 2D h-BN based electronic synapses 1-gen-2018 Shi, Y.; Pan, C.; Chen, V.; Raghavan, N.; Pey, K. L.; Puglisi, F. M.; Pop, E.; Wong, H. -S. P.; Lanza, M.
Combined variability/sensitivity analysis in III-V and silicon FETs for future technological nodes 1-gen-2017 Zagni, Nicolo'; Puglisi, Francesco Maria; Verzellesi, Giovanni; Pavan, Paolo
Combining Experiments and a Novel Small Signal Model to Investigate the Degradation Mechanisms in Ferroelectric Tunnel Junctions 1-gen-2022 Benatti, L.; Pavan, P.; Puglisi, F. M.
A Compact Model of Hafnium-Oxide-Based Resistive Random Access Memory 1-gen-2013 Puglisi, Francesco Maria; Pavan, Paolo; Padovani, Andrea; Larcher, Luca
A Compact Model of Program Window in HfOx RRAM Devices for Conductive Filament Characteristics Analysis 1-gen-2014 Larcher, Luca; Puglisi, Francesco Maria; Pavan, Paolo; Padovani, Andrea; Vandelli, Luca; Bersuker, Gennadi