ItalianoPUGLISI, Francesco Maria
Pubblicazioni
Risultati 1 - 20 di 77 (tempo di esecuzione: 0.0 secondi).
| Titolo | Data di pubblicazione | Autore(i) | |
|---|---|---|---|
| 1 | 2D h-BN based RRAM devices | 2016 | Puglisi, Francesco Maria; Larcher, Luca; Pan, C.; Xiao, N.; Shi, Y.; Hui, F.; Lanza, M. |
| 2 | Advanced modeling and characterization techniques for innovative memory devices: The RRAM case | 2019 | Puglisi, Francesco Maria; Padovani, Andrea; Pavan, Paolo; Larcher, Luca |
| 3 | Analysis of RTN and cycling variability in HfO2 RRAM devices in LRS | 2014 | Puglisi, Francesco Maria; Pavan, Paolo; Larcher, Luca; Padovani, Andrea |
| 4 | Anomalous random telegraph noise and temporary phenomena in resistive random access memory | 2016 | Puglisi, Francesco Maria; Larcher, Luca; Padovani, Andrea; Pavan, Paolo |
| 5 | Bipolar Resistive RAM Based on HfO2: Physics, Compact Modeling, and Variability Control | 2016 | Puglisi, Francesco Maria; Larcher, Luca; Padovani, Andrea; Pavan, Paolo |
| 6 | Boron Vacancies Causing Breakdown in 2D Layered Hexagonal Boron Nitride Dielectrics | 2019 | Ranjan, A.; Raghavan, N.; Puglisi, F. M.; Mei, S.; Padovani, A.; Larcher, L.; Shubhakar, K.; Pavan, P.; Bosman, M.; Zhang, X. X.; O'Shea, S. J.; Pey, K. L. |
| 7 | Characterization of anomalous Random Telegraph Noise in Resistive Random Access Memory | 2015 | Puglisi, Francesco Maria; Larcher, Luca; Padovani, Andrea; Pavan, Paolo |
| 8 | Chemical vapor deposition of hexagonal boron nitride on metal-coated wafers and transfer-free fabrication of resistive switching devices | 2019 | Jing, X.; Puglisi, F.; Akinwande, D.; Lanza, M. |
| 9 | Circuit reliability of low-power rram-based logic-in-memory architectures | 2019 | Zanotti, T.; Puglisi, F. M.; Pavan, P. |
| 10 | Coexistence of Grain‐Boundaries‐Assisted Bipolar and Threshold Resistive Switching in Multilayer Hexagonal Boron Nitride | 2017 | Pan, Chengbin; Ji, Yanfeng; Xiao, Na; Hui, Fei; Tang, Kechao; Guo, Yuzheng; Xie, Xiaoming; Puglisi, Francesco Maria; Larcher, Luca; Miranda, Enrique; Jiang, Lanlan; Shi, Yuanyuan; Valov, Ilia; Mcintyre, Paul; Waser, Rainer; Lanza, Mario |
| 11 | Coexistence of volatile and non-volatile resistive switching in 2D h-BN based electronic synapses | 2018 | Shi, Y.; Pan, C.; Chen, V.; Raghavan, N.; Pey, K. L.; Puglisi, F. M.; Pop, E.; Wong, H. -S. P.; Lanza, M. |
| 12 | Combined variability/sensitivity analysis in III-V and silicon FETs for future technological nodes | 2017 | Zagni, Nicolo'; Puglisi, Francesco Maria; Verzellesi, Giovanni; Pavan, Paolo |
| 13 | A Compact Model of Hafnium-Oxide-Based Resistive Random Access Memory | 2013 | Puglisi, Francesco Maria; Pavan, Paolo; Padovani, Andrea; Larcher, Luca |
| 14 | A Compact Model of Program Window in HfOx RRAM Devices for Conductive Filament Characteristics Analysis | 2014 | Larcher, Luca; Puglisi, Francesco Maria; Pavan, Paolo; Padovani, Andrea; Vandelli, Luca; Bersuker, Gennadi |
| 15 | A Complete Statistical Investigation of RTN in HfO₂-Based RRAM in High Resistive State | 2015 | Puglisi, Francesco Maria; Larcher, Luca; Padovani, Andrea; Pavan, Paolo |
| 16 | A consistent picture of cycling dispersion of resistive states in HfOx resistive random access memory | 2016 | Puglisi, Francesco Maria; Pavan, Paolo |
| 17 | Defect density evaluation in a high-k MOSFET gate stack combining experimental and modeling methods | 2014 | Puglisi, Francesco Maria; Veksler, D.; Matthews, K.; Bersuker, G.; Larcher, Luca; Padovani, Andrea; Vandelli, Luca; Pavan, Paolo |
| 18 | Effects of Border Traps on Transfer Curve Hysteresis and Split-CV Mobility Measurement in InGaAs Quantum-Well MOSFETs | 2016 | Pavan, Paolo; Zagni, Nicolo'; Puglisi, Francesco Maria; Alian, Alireza; Thean, Aaron Voon Yew; Collaert, Nadine; Verzellesi, Giovanni |
| 19 | Effects of mole fraction variations and scaling on total variability in InGaAs MOSFETs | 2019 | Zagni, N.; Puglisi, F. M.; Pavan, P.; Verzellesi, G. |
| 20 | Electroforming in Metal-Oxide Memristive Synapses | 2020 | Wang, T.; Shi, Y.; Puglisi, F. M.; Chen, S.; Zhu, K.; Zuo, Y.; Li, X.; Jing, X.; Han, T.; Guo, B.; Bukvisova, K.; Kachtik, L.; Kolibal, M.; Wen, C.; Lanza, M. |
Dettaglio
PUGLISI, Francesco Maria
Dipartimento di Ingegneria "Enzo Ferrari"
Copyright © 2020