EnglishPUGLISI, Francesco Maria
Risultati 1 - 20 di 58 (tempo di esecuzione: 0.001 secondi).
| Titolo | Data di pubblicazione | Autore(i) | |
|---|---|---|---|
| 1 | Variability and sensitivity to process parameters variations in InGaAs Dual-Gate Ultra-Thin Body MOSFETS: A scaling perspective | 2017 | Zagni, Nicolò; Puglisi, Francesco Maria; Verzellesi, Giovanni; Pavan, Paolo |
| 2 | Understanding current instabilities in conductive atomic force microscopy | 2019 | Jiang, Lanlan; Weber, Jonas; Puglisi, Francesco Maria; Pavan, Paolo; Larcher, Luca; Frammelsberger, Werner; Benstetter, Guenther; Lanza, Mario |
| 3 | Threshold Voltage Statistical Variability and Its Sensitivity to Critical Geometrical Parameters in Ultrascaled InGaAs and Silicon FETs | 2017 | Zagni, Nicolo'; Puglisi, Francesco Maria; Verzellesi, Giovanni; Pavan, Paolo |
| 4 | Temperature impact on the reset operation in HfO2 RRAM | 2015 | Puglisi, Francesco Maria; Qafa, Altin; Pavan, Paolo |
| 5 | A study on HfO2 RRAM in HRS based on I–V and RTN analysis | 2014 | Puglisi, Francesco M.; Pavan, Paolo; Padovani, Andrea; Larcher, Luca |
| 6 | Statistical analysis of random telegraph noise in HfO2-based RRAM devices in LRS | 2015 | Puglisi, Francesco Maria; Pavan, Paolo; Larcher, Luca; Padovani, Andrea |
| 7 | Single vacancy defect spectroscopy on HfO2 using random telegraph noise signals from scanning tunneling microscopy | 2016 | Thamankar, R.; Raghavan, N.; Molina, J.; Puglisi, Francesco Maria; O'Shea, S. J.; Shubhakar, K.; Larcher, Luca; Pavan, Paolo; Padovani, Andrea; Pey, K. L. |
| 8 | Scaling perspective and reliability of conductive filament formation in ultra-scaled HfO2 Resistive Random Access Memory | 2017 | Puglisi, Francesco Maria; Celano, Umberto; Padovani, Andrea; Vandervorst, Wilfried; Larcher, Luca; Pavan, Paolo |
| 9 | RTS Noise Characterization of HfOx RRAM in High Resistive State | 2013 | F. M. Puglisi; P. Pavan; A. Padovani; L. Larcher; G. Bersuker |
| 10 | RTN analysis with FHMM as a tool for multi-trap characterization in HfOx RRAM | 2013 | Francesco Maria Puglisi; Paolo Pavan |
| 11 | Recommended Methods to Study Resistive Switching Devices | 2019 | Lanza, Mario; Wong, H. -S. Philip; Pop, Eric; Ielmini, Daniele; Strukov, Dimitri; Regan, Brian C.; Larcher, Luca; Villena, Marco A.; Yang, J. Joshua; Goux, Ludovic; Belmonte, Attilio; Yang, Yuchao; Puglisi, Francesco M.; Kang, Jinfeng; Magyari-Köpe, Blanka; Yalon, Eilam; Kenyon, Anthony; Buckwell, Mark; Mehonic, Adnan; Shluger, Alexander; Li, Haitong; Hou, Tuo-Hung; Hudec, Boris; Akinwande, Deji; Ge, Ruijing; Ambrogio, Stefano; Roldan, Juan B.; Miranda, Enrique; Suñe, Jordi; Pey, Kin Leong; Wu, Xing; Raghavan, Nagarajan; Wu, Ernest; Lu, Wei D.; Navarro, Gabriele; Zhang, Weidong; Wu, Huaqiang; Li, Runwei; Holleitner, Alexander; Wurstbauer, Ursula; Lemme, Max C.; Liu, Ming; Long, Shibing; Liu, Qi; Lv, Hangbing; Padovani, Andrea; Pavan, Paolo; Valov, Ilia; Jing, Xu; Han, Tingting; Zhu, Kaichen; Chen, Shaochuan; Hui, Fei; Shi, Yuanyuan |
| 12 | Random Telegraph Signal Noise Properties of HfOx RRAM in High Resistive States | 2012 | Puglisi, Francesco Maria; Pavan, Paolo; Padovani, Andrea; Larcher, Luca; G., Bersuker |
| 13 | Random telegraph noise: Measurement, data analysis, and interpretation | 2017 | Puglisi, Francesco Maria; Padovani, Andrea; Larcher, Luca; Pavan, Paolo |
| 14 | Random Telegraph Noise in Resistive Random Access Memories: Compact Modeling and Advanced Circuit Design | 2018 | Puglisi, Francesco Maria; Zagni, Nicolo; Larcher, Luca; Pavan, Paolo |
| 15 | Random telegraph noise in HfOx Resistive Random Access Memory: From physics to compact modeling | 2016 | Puglisi, Francesco Maria; Pavan, Paolo; Larcher, Luca |
| 16 | Random telegraph noise in 2D hexagonal boron nitride dielectric films | 2018 | Ranjan, A.; Puglisi, F. M.; Raghavan, N.; O'Shea, S. J.; Shubhakar, K.; Pavan, P.; Padovani, A.; Larcher, L.; Pey, K. L. |
| 17 | Random Telegraph Noise analysis to investigate the properties of active traps of HfO2-Based RRAM in HRS | 2013 | F. M. Puglisi; P. Pavan; A. Padovani; L. Larcher |
| 18 | Random Telegraph Noise analysis as a tool to link physical device features to electrical reliability in nanoscale devices | 2016 | Puglisi, Francesco Maria |
| 19 | Random dopant fluctuation variability in scaled InGaAs dual-gate ultra-thin body MOSFETs: source and drain doping effect | 2017 | Zagni, Nicolo; Puglisi, Francesco Maria; Pavan, Paolo; Verzellesi, Giovanni |
| 20 | Progresses in Modeling HfOx RRAM Operations and Variability | 2014 | Larcher, Luca.; Pirrotta, Onofrio.; Puglisi, Francesco M.; Padovani, Andrea.; Pavan, Paolo.; Vandelli, Luca |
Nome completo:
PUGLISI, Francesco Maria
Varianti:
Francesco M. Puglisi
Puglisi, Francesco M.
Puglisi, Francesco M.
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