In this paper we investigate the effect of current compliance during forming in HfO2-based Resistive Random Access Memories (RRAMs). We implemented a thorough statistical characterization of Random Telegraph Noise (RTN) in High Resistive State (HRS). Complex RTN signals are analyzed through a Factorial Hidden Markov Model (FHMM) approach, deriving the statistical properties of traps responsible for the multi-level RTN measured in these devices. Noise is explored in devices formed at different current compliances, demonstrating a direct relation between the current compliance, the cross-section of both the CF and the dielectric barrier created during the reset operation, and the number of active traps contributing to the RTN.
An investigation on the role of current compliance in HfO2-based RRAM in HRS using RTN and I-V data / Puglisi, Francesco Maria; Pavan, Paolo. - STAMPA. - (2014), pp. 129-132. (Intervento presentato al convegno 15th International Conference on Ultimate Integration on Silicon (ULIS) tenutosi a Stocholm nel April, 7-9 2014) [10.1109/ULIS.2014.6813915].