This paper presents two dimensional (2D) RRAM devices exploiting multilayer hexagonal boron nitride (h-BN) as active switching layer. Different electrodes including Cu, Ni-doped Cu (CuNi) and graphene (G) are considered. The devices show low set/reset voltages, high on/off current ratio, good endurance and very low overall variability. Experimental results are interpreted using a novel simulation framework, which proves that the memory behavior is enabled by the manipulation of a boron (B)-deficient conductive filament (CF). The cyclical release and diffusion of B ions are the key physical mechanisms responsible for switching.
2D h-BN based RRAM devices / Puglisi, Francesco Maria; Larcher, Luca; Pan, C.; Xiao, N.; Shi, Y.; Hui, F.; Lanza, M.. - (2016), pp. 34.8.1-34.8.4. (Intervento presentato al convegno 62nd IEEE International Electron Devices Meeting, IEDM 2016 tenutosi a San Francisco (CA) - USA nel 2016) [10.1109/IEDM.2016.7838544].
2D h-BN based RRAM devices
PUGLISI, Francesco Maria;LARCHER, Luca;
2016
Abstract
This paper presents two dimensional (2D) RRAM devices exploiting multilayer hexagonal boron nitride (h-BN) as active switching layer. Different electrodes including Cu, Ni-doped Cu (CuNi) and graphene (G) are considered. The devices show low set/reset voltages, high on/off current ratio, good endurance and very low overall variability. Experimental results are interpreted using a novel simulation framework, which proves that the memory behavior is enabled by the manipulation of a boron (B)-deficient conductive filament (CF). The cyclical release and diffusion of B ions are the key physical mechanisms responsible for switching.
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