In this work we explore the microscopic mechanisms responsible for Random Telegraph Noise (RTN) current fluctuations in HfOx Resistive Random Access Memory (RRAM) devices. The statistical properties of the RTN current fluctuations are analyzed in a variety of reading conditions by exploiting the Factorial Hidden Markov Model (FHMM) to decompose the complex RTN traces in a superimposition of two-level fluctuations. We investigate the physical mechanisms that could be responsible for the RTN current fluctuations by considering two options that are the Coulomb blockade effect and the metastable-to-stable transition of defect assisting the Trap- Assisted-Tunneling (TAT) charge transport. Physics-based simulations show that both options allow reproducing the RTN current fluctuations. The electron TAT via oxygen vacancy defects, responsible for the current in High Resistive State (HRS), is significantly altered by the electric field caused by electron trapping at defects (i.e. neutral interstitial oxygen), not directly involved in charge transport. Similarly, the transition of oxygen vacancies into a stable-slow defect configuration (still unidentified in HfOx) can temporarily switch off the current, thus explaining the RTN.

A microscopic physical description of RTN current fluctuations in HfOx RRAM / Puglisi, Francesco Maria; Pavan, Paolo; Vandelli, Luca; Padovani, Andrea; Bertocchi, Matteo; Larcher, Luca. - STAMPA. - 2015-:(2015), pp. 5B5.1-5B5.6. ((Intervento presentato al convegno IEEE International Reliability Physics Symposium, IRPS 2015 tenutosi a Monterey, USA nel 19-23 April 2015 [10.1109/IRPS.2015.7112746].

A microscopic physical description of RTN current fluctuations in HfOx RRAM

PUGLISI, Francesco Maria;PAVAN, Paolo;VANDELLI, LUCA;PADOVANI, ANDREA;BERTOCCHI, MATTEO;LARCHER, Luca
2015

Abstract

In this work we explore the microscopic mechanisms responsible for Random Telegraph Noise (RTN) current fluctuations in HfOx Resistive Random Access Memory (RRAM) devices. The statistical properties of the RTN current fluctuations are analyzed in a variety of reading conditions by exploiting the Factorial Hidden Markov Model (FHMM) to decompose the complex RTN traces in a superimposition of two-level fluctuations. We investigate the physical mechanisms that could be responsible for the RTN current fluctuations by considering two options that are the Coulomb blockade effect and the metastable-to-stable transition of defect assisting the Trap- Assisted-Tunneling (TAT) charge transport. Physics-based simulations show that both options allow reproducing the RTN current fluctuations. The electron TAT via oxygen vacancy defects, responsible for the current in High Resistive State (HRS), is significantly altered by the electric field caused by electron trapping at defects (i.e. neutral interstitial oxygen), not directly involved in charge transport. Similarly, the transition of oxygen vacancies into a stable-slow defect configuration (still unidentified in HfOx) can temporarily switch off the current, thus explaining the RTN.
IEEE International Reliability Physics Symposium, IRPS 2015
Monterey, USA
19-23 April 2015
2015-
5B5.1
5B5.6
Puglisi, Francesco Maria; Pavan, Paolo; Vandelli, Luca; Padovani, Andrea; Bertocchi, Matteo; Larcher, Luca
A microscopic physical description of RTN current fluctuations in HfOx RRAM / Puglisi, Francesco Maria; Pavan, Paolo; Vandelli, Luca; Padovani, Andrea; Bertocchi, Matteo; Larcher, Luca. - STAMPA. - 2015-:(2015), pp. 5B5.1-5B5.6. ((Intervento presentato al convegno IEEE International Reliability Physics Symposium, IRPS 2015 tenutosi a Monterey, USA nel 19-23 April 2015 [10.1109/IRPS.2015.7112746].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11380/1082353
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