PUGLISI, Francesco Maria
PUGLISI, Francesco Maria
Dipartimento di Ingegneria "Enzo Ferrari"
2D h-BN based RRAM devices
2016 Puglisi, Francesco Maria; Larcher, Luca; Pan, C.; Xiao, N.; Shi, Y.; Hui, F.; Lanza, M.
A Compact Model of Hafnium-Oxide-Based Resistive Random Access Memory
2013 Puglisi, Francesco Maria; Pavan, Paolo; Padovani, Andrea; Larcher, Luca
A Compact Model of Program Window in HfOx RRAM Devices for Conductive Filament Characteristics Analysis
2014 Larcher, Luca; Puglisi, Francesco Maria; Pavan, Paolo; Padovani, Andrea; Vandelli, Luca; Bersuker, Gennadi
A Complete Statistical Investigation of RTN in HfO₂-Based RRAM in High Resistive State
2015 Puglisi, Francesco Maria; Larcher, Luca; Padovani, Andrea; Pavan, Paolo
A consistent picture of cycling dispersion of resistive states in HfOx resistive random access memory
2016 Puglisi, Francesco Maria; Pavan, Paolo
A Hybrid CMOS-Memristor Spiking Neural Network Supporting Multiple Learning Rules
2024 Florini, Davide; Gandolfi, Daniela; Mapelli, Jonathan; Benatti, Lorenzo; Pavan, Paolo; Puglisi, Francesco Maria
A microscopic physical description of RTN current fluctuations in HfOx RRAM
2015 Puglisi, Francesco Maria; Pavan, Paolo; Vandelli, Luca; Padovani, Andrea; Bertocchi, Matteo; Larcher, Luca
A multi-scale methodology connecting device physics to compact models and circuit applications for OxRAM technology
2016 Puglisi, Francesco Maria; Deleruyelle, Damien; Portal, Jean Michel; Pavan, Paolo; Larcher, Luca
A new verilog-A compact model of random telegraph noise in oxide-based RRAM for advanced circuit design
2017 Puglisi, Francesco Maria; Zagni, Nicolo'; Larcher, Luca; Pavan, Paolo
A Novel Program-Verify Algorithm for Multi-Bit Operation in HfO2 RRAM
2015 Puglisi, Francesco Maria; Wenger, C.; Pavan, Paolo
A study on HfO2 RRAM in HRS based on I–V and RTN analysis
2014 Puglisi, Francesco Maria; Pavan, Paolo; Padovani, Andrea; Larcher, Luca
A Unified Framework to Explain Random Telegraph Noise Complexity in MOSFETs and RRAMs
2023 Vecchi, S.; Pavan, P.; Puglisi, F. M.
Advanced Data Encryption using 2D Materials
2021 Wen, Chao; Li, Xuehua; Zanotti, Tommaso; Puglisi, Francesco Maria; Shi, Yuanyuan; Saiz, Fernan; Antidormi, Aleandro; Roche, Stephan; Zheng, Wenwen; Liang, Xianhu; Hu, Jiaxin; Duhm, Steffen; Roldan, Juan B.; Wu, Tianru; Chen, Victoria; Pop, Eric; Garrido, Blas; Zhu, Kaichen; Hui, Fei; Lanza, Mario
Advanced modeling and characterization techniques for innovative memory devices: The RRAM case
2019 Puglisi, Francesco Maria; Padovani, Andrea; Pavan, Paolo; Larcher, Luca
An Empirical Model for RRAM Resistance in Low- and High-Resistance State
2013 Puglisi, Francesco Maria; Larcher, Luca; G., Bersuker; Padovani, Andrea; Pavan, Paolo
An investigation on the role of current compliance in HfO2-based RRAM in HRS using RTN and I-V data
2014 Puglisi, Francesco Maria; Pavan, Paolo
Analysis of RTN and cycling variability in HfO2 RRAM devices in LRS
2014 Puglisi, Francesco Maria; Pavan, Paolo; Larcher, Luca; Padovani, Andrea
Anomalous random telegraph noise and temporary phenomena in resistive random access memory
2016 Puglisi, Francesco Maria; Larcher, Luca; Padovani, Andrea; Pavan, Paolo
Biologically Plausible Information Propagation in a CMOS Integrate-and-Fire Artificial Neuron Circuit with Memristive Synapses
2023 Benatti, Lorenzo; Zanotti, Tommaso; Gandolfi, Daniela; Mapelli, Jonathan; Puglisi, Francesco Maria
Bipolar Resistive RAM Based on HfO2: Physics, Compact Modeling, and Variability Control
2016 Puglisi, Francesco Maria; Larcher, Luca; Padovani, Andrea; Pavan, Paolo
Titolo | Data di pubblicazione | Autore(i) | File |
---|---|---|---|
2D h-BN based RRAM devices | 1-gen-2016 | Puglisi, Francesco Maria; Larcher, Luca; Pan, C.; Xiao, N.; Shi, Y.; Hui, F.; Lanza, M. | |
A Compact Model of Hafnium-Oxide-Based Resistive Random Access Memory | 1-gen-2013 | Puglisi, Francesco Maria; Pavan, Paolo; Padovani, Andrea; Larcher, Luca | |
A Compact Model of Program Window in HfOx RRAM Devices for Conductive Filament Characteristics Analysis | 1-gen-2014 | Larcher, Luca; Puglisi, Francesco Maria; Pavan, Paolo; Padovani, Andrea; Vandelli, Luca; Bersuker, Gennadi | |
A Complete Statistical Investigation of RTN in HfO₂-Based RRAM in High Resistive State | 1-gen-2015 | Puglisi, Francesco Maria; Larcher, Luca; Padovani, Andrea; Pavan, Paolo | |
A consistent picture of cycling dispersion of resistive states in HfOx resistive random access memory | 1-gen-2016 | Puglisi, Francesco Maria; Pavan, Paolo | |
A Hybrid CMOS-Memristor Spiking Neural Network Supporting Multiple Learning Rules | 1-gen-2024 | Florini, Davide; Gandolfi, Daniela; Mapelli, Jonathan; Benatti, Lorenzo; Pavan, Paolo; Puglisi, Francesco Maria | |
A microscopic physical description of RTN current fluctuations in HfOx RRAM | 1-gen-2015 | Puglisi, Francesco Maria; Pavan, Paolo; Vandelli, Luca; Padovani, Andrea; Bertocchi, Matteo; Larcher, Luca | |
A multi-scale methodology connecting device physics to compact models and circuit applications for OxRAM technology | 1-gen-2016 | Puglisi, Francesco Maria; Deleruyelle, Damien; Portal, Jean Michel; Pavan, Paolo; Larcher, Luca | |
A new verilog-A compact model of random telegraph noise in oxide-based RRAM for advanced circuit design | 1-gen-2017 | Puglisi, Francesco Maria; Zagni, Nicolo'; Larcher, Luca; Pavan, Paolo | |
A Novel Program-Verify Algorithm for Multi-Bit Operation in HfO2 RRAM | 1-gen-2015 | Puglisi, Francesco Maria; Wenger, C.; Pavan, Paolo | |
A study on HfO2 RRAM in HRS based on I–V and RTN analysis | 1-gen-2014 | Puglisi, Francesco Maria; Pavan, Paolo; Padovani, Andrea; Larcher, Luca | |
A Unified Framework to Explain Random Telegraph Noise Complexity in MOSFETs and RRAMs | 1-gen-2023 | Vecchi, S.; Pavan, P.; Puglisi, F. M. | |
Advanced Data Encryption using 2D Materials | 1-gen-2021 | Wen, Chao; Li, Xuehua; Zanotti, Tommaso; Puglisi, Francesco Maria; Shi, Yuanyuan; Saiz, Fernan; Antidormi, Aleandro; Roche, Stephan; Zheng, Wenwen; Liang, Xianhu; Hu, Jiaxin; Duhm, Steffen; Roldan, Juan B.; Wu, Tianru; Chen, Victoria; Pop, Eric; Garrido, Blas; Zhu, Kaichen; Hui, Fei; Lanza, Mario | |
Advanced modeling and characterization techniques for innovative memory devices: The RRAM case | 1-gen-2019 | Puglisi, Francesco Maria; Padovani, Andrea; Pavan, Paolo; Larcher, Luca | |
An Empirical Model for RRAM Resistance in Low- and High-Resistance State | 1-gen-2013 | Puglisi, Francesco Maria; Larcher, Luca; G., Bersuker; Padovani, Andrea; Pavan, Paolo | |
An investigation on the role of current compliance in HfO2-based RRAM in HRS using RTN and I-V data | 1-gen-2014 | Puglisi, Francesco Maria; Pavan, Paolo | |
Analysis of RTN and cycling variability in HfO2 RRAM devices in LRS | 1-gen-2014 | Puglisi, Francesco Maria; Pavan, Paolo; Larcher, Luca; Padovani, Andrea | |
Anomalous random telegraph noise and temporary phenomena in resistive random access memory | 1-gen-2016 | Puglisi, Francesco Maria; Larcher, Luca; Padovani, Andrea; Pavan, Paolo | |
Biologically Plausible Information Propagation in a CMOS Integrate-and-Fire Artificial Neuron Circuit with Memristive Synapses | 1-gen-2023 | Benatti, Lorenzo; Zanotti, Tommaso; Gandolfi, Daniela; Mapelli, Jonathan; Puglisi, Francesco Maria | |
Bipolar Resistive RAM Based on HfO2: Physics, Compact Modeling, and Variability Control | 1-gen-2016 | Puglisi, Francesco Maria; Larcher, Luca; Padovani, Andrea; Pavan, Paolo |