In this paper, we investigate the random telegraph noise (RTN) in hafnium-oxide resistive random access memories in high resistive state (HRS). The current fluctuations are analyzed by decomposing the multilevel RTN signal into two-level RTN traces using a factorial hidden Markov model approach, which allows extracting the properties of the traps originating the RTN. The current fluctuations, statistically analyzed on devices with a different stack reset at different voltages, are attributed to the activation and deactivation of defects in the oxidized tip of the conductive filament, assisting the trap-assisted tunneling transport in HRS. The physical mechanisms responsible for the defect activation are discussed. We find that RTN current fluctuations can be due to either the coulomb interaction between oxygen vacancies (normally assisting the charge transport) and the electron charge trapped at interstitial oxygen defects, or the metastable defect configuration of oxygen vacancies assisting the electron transport in HRS. A consistent microscopic description of the phenomenon is proposed, linking the material properties to the device performance.

A Complete Statistical Investigation of RTN in HfO₂-Based RRAM in High Resistive State / Puglisi, Francesco Maria; Larcher, Luca; Padovani, Andrea; Pavan, Paolo. - In: IEEE TRANSACTIONS ON ELECTRON DEVICES. - ISSN 0018-9383. - STAMPA. - 62:8(2015), pp. 2606-2613. [10.1109/TED.2015.2439812]

A Complete Statistical Investigation of RTN in HfO₂-Based RRAM in High Resistive State

PUGLISI, Francesco Maria;LARCHER, Luca;PADOVANI, ANDREA;PAVAN, Paolo
2015

Abstract

In this paper, we investigate the random telegraph noise (RTN) in hafnium-oxide resistive random access memories in high resistive state (HRS). The current fluctuations are analyzed by decomposing the multilevel RTN signal into two-level RTN traces using a factorial hidden Markov model approach, which allows extracting the properties of the traps originating the RTN. The current fluctuations, statistically analyzed on devices with a different stack reset at different voltages, are attributed to the activation and deactivation of defects in the oxidized tip of the conductive filament, assisting the trap-assisted tunneling transport in HRS. The physical mechanisms responsible for the defect activation are discussed. We find that RTN current fluctuations can be due to either the coulomb interaction between oxygen vacancies (normally assisting the charge transport) and the electron charge trapped at interstitial oxygen defects, or the metastable defect configuration of oxygen vacancies assisting the electron transport in HRS. A consistent microscopic description of the phenomenon is proposed, linking the material properties to the device performance.
62
8
2606
2613
A Complete Statistical Investigation of RTN in HfO₂-Based RRAM in High Resistive State / Puglisi, Francesco Maria; Larcher, Luca; Padovani, Andrea; Pavan, Paolo. - In: IEEE TRANSACTIONS ON ELECTRON DEVICES. - ISSN 0018-9383. - STAMPA. - 62:8(2015), pp. 2606-2613. [10.1109/TED.2015.2439812]
Puglisi, Francesco Maria; Larcher, Luca; Padovani, Andrea; Pavan, Paolo
File in questo prodotto:
File Dimensione Formato  
TED_RTN_2015_Final.pdf

accesso aperto

Tipologia: Post-print dell'autore (bozza post referaggio)
Dimensione 1.54 MB
Formato Adobe PDF
1.54 MB Adobe PDF Visualizza/Apri
Pubblicazioni consigliate

Caricamento pubblicazioni consigliate

Licenza Creative Commons
I metadati presenti in IRIS UNIMORE sono rilasciati con licenza Creative Commons CC0 1.0 Universal, mentre i file delle pubblicazioni sono rilasciati con licenza Attribuzione 4.0 Internazionale (CC BY 4.0), salvo diversa indicazione.
In caso di violazione di copyright, contattare Supporto Iris

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11380/1082343
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 78
  • ???jsp.display-item.citation.isi??? 74
social impact