We present a new algorithm for the exact solutionof the system of equations describing charge trappingand transport across the dielectric stack of nitridebasedcharge trapping memories. The algorithm is implementedin a physical MANOS model accounting fortemperature effects and charge trapping into the Al2O3blocking layer. The model reproduces threshold voltageshifts measured at different temperatures on differentMANOS stacks.
A novel Algorithm for the Solution of Charge Transport Equations in MANOS Devices Including Charge Trapping in Alumina and Temperature Effects / Padovani, Andrea; Larcher, Luca. - STAMPA. - (2010), pp. 229-232. (Intervento presentato al convegno 15th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2010 tenutosi a Bologna, ita nel 6-8 September 2010) [10.1109/SISPAD.2010.5604519].
A novel Algorithm for the Solution of Charge Transport Equations in MANOS Devices Including Charge Trapping in Alumina and Temperature Effects
PADOVANI, ANDREA;LARCHER, Luca
2010
Abstract
We present a new algorithm for the exact solutionof the system of equations describing charge trappingand transport across the dielectric stack of nitridebasedcharge trapping memories. The algorithm is implementedin a physical MANOS model accounting fortemperature effects and charge trapping into the Al2O3blocking layer. The model reproduces threshold voltageshifts measured at different temperatures on differentMANOS stacks.
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