We present a new algorithm for the exact solutionof the system of equations describing charge trappingand transport across the dielectric stack of nitridebasedcharge trapping memories. The algorithm is implementedin a physical MANOS model accounting fortemperature effects and charge trapping into the Al2O3blocking layer. The model reproduces threshold voltageshifts measured at different temperatures on differentMANOS stacks.
A novel Algorithm for the Solution of Charge Transport Equations in MANOS Devices Including Charge Trapping in Alumina and Temperature Effects / Padovani, Andrea; Larcher, Luca. - STAMPA. - (2010), pp. 229-232. ((Intervento presentato al convegno 15th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2010 tenutosi a Bologna, ita nel 6-8 September 2010 [10.1109/SISPAD.2010.5604519].
Data di pubblicazione: | 2010 | |
Titolo: | A novel Algorithm for the Solution of Charge Transport Equations in MANOS Devices Including Charge Trapping in Alumina and Temperature Effects | |
Autore/i: | Padovani, Andrea; Larcher, Luca | |
Autore/i UNIMORE: | ||
Digital Object Identifier (DOI): | http://dx.doi.org/10.1109/SISPAD.2010.5604519 | |
Codice identificativo Scopus: | 2-s2.0-78649581125 | |
Codice identificativo ISI: | WOS:000283778800020 | |
Nome del convegno: | 15th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2010 | |
Luogo del convegno: | Bologna, ita | |
Data del convegno: | 6-8 September 2010 | |
Pagina iniziale: | 229 | |
Pagina finale: | 232 | |
Citazione: | A novel Algorithm for the Solution of Charge Transport Equations in MANOS Devices Including Charge Trapping in Alumina and Temperature Effects / Padovani, Andrea; Larcher, Luca. - STAMPA. - (2010), pp. 229-232. ((Intervento presentato al convegno 15th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2010 tenutosi a Bologna, ita nel 6-8 September 2010 [10.1109/SISPAD.2010.5604519]. | |
Tipologia | Relazione in Atti di Convegno |
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