We present a defect spectroscopy technique to profile the energy and spatial distribution of defects within a material stack from leakage current (J-V), capacitance (C-V), and conductance (G-V) measurements. The technique relies on the concept of sensitivity maps (SMs) that identify the bandgap regions, where defects affect those electrical characteristics. The information provided by SMs are used to reproduce J-V, C-V, and G-V data measured at different temperatures and frequencies by means of physics-based simulations relying on an accurate description of carrier-defect interactions. The proposed defect spectroscopy technique is applied to ZrO2-based metal-insulator-metal structures of different compositions for dynamic random-access memory capacitor applications. The origin of the observed voltage, temperature, and frequency dependencies of the I-V, C-V, and G-V data is understood, and the atomic structure of the relevant stack defects is identified.

A Sensitivity Map-Based Approach to Profile Defects in MIM Capacitors From I-V, C-V, and G-V Measurements / Padovani, A.; Kaczer, B.; Pesic, M.; Belmonte, A.; Popovici, M.; Nyns, L.; Linten, D.; Afanas'ev, V. V.; Shlyakhov, I.; Lee, Y.; Park, H.; Larcher, L.. - In: IEEE TRANSACTIONS ON ELECTRON DEVICES. - ISSN 0018-9383. - 66:4(2019), pp. 1892-1898. [10.1109/TED.2019.2900030]

A Sensitivity Map-Based Approach to Profile Defects in MIM Capacitors From I-V, C-V, and G-V Measurements

Padovani A.;Larcher L.
2019

Abstract

We present a defect spectroscopy technique to profile the energy and spatial distribution of defects within a material stack from leakage current (J-V), capacitance (C-V), and conductance (G-V) measurements. The technique relies on the concept of sensitivity maps (SMs) that identify the bandgap regions, where defects affect those electrical characteristics. The information provided by SMs are used to reproduce J-V, C-V, and G-V data measured at different temperatures and frequencies by means of physics-based simulations relying on an accurate description of carrier-defect interactions. The proposed defect spectroscopy technique is applied to ZrO2-based metal-insulator-metal structures of different compositions for dynamic random-access memory capacitor applications. The origin of the observed voltage, temperature, and frequency dependencies of the I-V, C-V, and G-V data is understood, and the atomic structure of the relevant stack defects is identified.
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A Sensitivity Map-Based Approach to Profile Defects in MIM Capacitors From I-V, C-V, and G-V Measurements / Padovani, A.; Kaczer, B.; Pesic, M.; Belmonte, A.; Popovici, M.; Nyns, L.; Linten, D.; Afanas'ev, V. V.; Shlyakhov, I.; Lee, Y.; Park, H.; Larcher, L.. - In: IEEE TRANSACTIONS ON ELECTRON DEVICES. - ISSN 0018-9383. - 66:4(2019), pp. 1892-1898. [10.1109/TED.2019.2900030]
Padovani, A.; Kaczer, B.; Pesic, M.; Belmonte, A.; Popovici, M.; Nyns, L.; Linten, D.; Afanas'Ev, V. V.; Shlyakhov, I.; Lee, Y.; Park, H.; Larcher, L.
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11380/1222825
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