In this work we apply a physical model based on charge transport and molecular mechanics/dynamics simulations to investigate the physical mechanisms governing the RRAM forming and switching operations. The proposed model identifies the major driving forces controlling conductive filament (CF) formation and changes during RRAM switching, thus providing a tool for investigation and optimization of RRAM devices.
Comprehensive physical modeling of forming and switching operations in HfO2 RRAM devices / Vandelli, Luca; Padovani, Andrea; Larcher, Luca; G., Broglia; G., Ori; Montorsi, Monia; G., Bersuker; Pavan, Paolo. - ELETTRONICO. - 1:(2011), pp. 17.5.1-17.5.4. (Intervento presentato al convegno 2011 IEEE International Electron Devices Meeting, IEDM 2011 tenutosi a Washington, DC, usa nel 5-7 December 2011) [10.1109/IEDM.2011.6131574].
Comprehensive physical modeling of forming and switching operations in HfO2 RRAM devices
VANDELLI, LUCA;PADOVANI, ANDREA;LARCHER, Luca;MONTORSI, Monia;PAVAN, Paolo
2011
Abstract
In this work we apply a physical model based on charge transport and molecular mechanics/dynamics simulations to investigate the physical mechanisms governing the RRAM forming and switching operations. The proposed model identifies the major driving forces controlling conductive filament (CF) formation and changes during RRAM switching, thus providing a tool for investigation and optimization of RRAM devices.
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Comprehensive physical modeling of forming and switching operations in HfO2 RRAM devices.pdf
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|
Comprehensive physical modeling of forming and switching operations in HfO2 RRAM devices.pdf
Accesso riservato
Tipologia:
Versione pubblicata dall'editore
Dimensione
2.28 MB
Formato
Adobe PDF
|
2.28 MB | Adobe PDF | Visualizza/Apri Richiedi una copia |
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