In this work we apply a physical model based on charge transport and molecular mechanics/dynamics simulations to investigate the physical mechanisms governing the RRAM forming and switching operations. The proposed model identifies the major driving forces controlling conductive filament (CF) formation and changes during RRAM switching, thus providing a tool for investigation and optimization of RRAM devices.

Comprehensive physical modeling of forming and switching operations in HfO2 RRAM devices / Vandelli, Luca; Padovani, Andrea; Larcher, Luca; G., Broglia; G., Ori; Montorsi, Monia; G., Bersuker; Pavan, Paolo. - ELETTRONICO. - 1:(2011), pp. 17.5.1-17.5.4. ((Intervento presentato al convegno IEEE International Electron Devices Meeting tenutosi a Washington nel 5-7 December 2011.

Comprehensive physical modeling of forming and switching operations in HfO2 RRAM devices

VANDELLI, LUCA;PADOVANI, ANDREA;LARCHER, Luca;MONTORSI, Monia;PAVAN, Paolo
2011-01-01

Abstract

In this work we apply a physical model based on charge transport and molecular mechanics/dynamics simulations to investigate the physical mechanisms governing the RRAM forming and switching operations. The proposed model identifies the major driving forces controlling conductive filament (CF) formation and changes during RRAM switching, thus providing a tool for investigation and optimization of RRAM devices.
IEEE International Electron Devices Meeting
Washington
5-7 December 2011
1
17.5.1
17.5.4
Vandelli, Luca; Padovani, Andrea; Larcher, Luca; G., Broglia; G., Ori; Montorsi, Monia; G., Bersuker; Pavan, Paolo
Comprehensive physical modeling of forming and switching operations in HfO2 RRAM devices / Vandelli, Luca; Padovani, Andrea; Larcher, Luca; G., Broglia; G., Ori; Montorsi, Monia; G., Bersuker; Pavan, Paolo. - ELETTRONICO. - 1:(2011), pp. 17.5.1-17.5.4. ((Intervento presentato al convegno IEEE International Electron Devices Meeting tenutosi a Washington nel 5-7 December 2011.
File in questo prodotto:
File Dimensione Formato  
Comprehensive physical modeling of forming and switching operations in HfO2 RRAM devices.pdf

Accesso riservato

Tipologia: Versione pubblicata dall'editore
Dimensione 2.28 MB
Formato Adobe PDF
2.28 MB Adobe PDF   Visualizza/Apri   Richiedi una copia
Comprehensive physical modeling of forming and switching operations in HfO2 RRAM devices.pdf

Accesso riservato

Tipologia: Versione pubblicata dall'editore
Dimensione 2.28 MB
Formato Adobe PDF
2.28 MB Adobe PDF   Visualizza/Apri   Richiedi una copia
Pubblicazioni consigliate

Licenza Creative Commons
I metadati presenti in IRIS UNIMORE sono rilasciati con licenza Creative Commons CC0 1.0 Universal, mentre i file delle pubblicazioni sono rilasciati con licenza Attribuzione 4.0 Internazionale (CC BY 4.0), salvo diversa indicazione.
In caso di violazione di copyright, contattare Supporto Iris

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11380/703863
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 44
  • ???jsp.display-item.citation.isi??? 11
social impact