Simulations of the dynamic physical processes involved in HfO2-based resistive-memory-operations are used to identify the dielectric structural properties responsible for device performance, while revealing that repeatable switching and higher HRS resistances are enabled by the oxide substoichiometric composition. These simulations support a conductive-filament-formation physical model which is resulted from metal-oxygen bond breakage and subsequent oxygen ion out-diffusion, thus leaving behind an oxygen vacancy rich region. The subsequent reset process is also shown to be controlled by re-oxidation of the filament tip.
Connecting the physical and electrical properties of Hafnia-based RRAM / B., Butcher; G., Bersuker; D., Gilmer; P., Kirsch; Larcher, Luca; Padovani, Andrea; Vandelli, Luca; R., Geer; P. D., Kirsch. - ELETTRONICO. - (2013), pp. 22.2.1-22.2.4. (Intervento presentato al convegno 2013 IEEE International Electron Devices Meeting, IEDM 2013 tenutosi a Washington, DC, usa nel 9-11 Dicembre 2013) [10.1109/IEDM.2013.6724682].
Connecting the physical and electrical properties of Hafnia-based RRAM
LARCHER, Luca;PADOVANI, ANDREA;VANDELLI, LUCA;
2013
Abstract
Simulations of the dynamic physical processes involved in HfO2-based resistive-memory-operations are used to identify the dielectric structural properties responsible for device performance, while revealing that repeatable switching and higher HRS resistances are enabled by the oxide substoichiometric composition. These simulations support a conductive-filament-formation physical model which is resulted from metal-oxygen bond breakage and subsequent oxygen ion out-diffusion, thus leaving behind an oxygen vacancy rich region. The subsequent reset process is also shown to be controlled by re-oxidation of the filament tip.
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