In this paper we present a novel defect spectroscopy technique to investigate the properties of high-κ metal-gate oxides. This technique, based on the simultaneous simulations of I-V, C-V and G-V curves at different frequencies, allows profiling the distribution of interfacial and bulk defects inside the gate oxide and investigating the composition of the high-κ stacks on III-V materials. The proposed technique is applied to investigate the properties of high-κ stacks of InGaAs MOSFETs.
A novel technique exploiting C-V, G-V and I-V simulations to investigate defect distribution and native oxide in high-κ dielectrics for III-V MOSFETs / Sereni, Gabriele; Larcher, Luca; Vandelli, Luca; Veksler, D.; Kim, T.; Koh, D.; Bersuker, Gennadi. - In: MICROELECTRONIC ENGINEERING. - ISSN 0167-9317. - 147(2015), pp. 281-284.
Data di pubblicazione: | 2015 |
Titolo: | A novel technique exploiting C-V, G-V and I-V simulations to investigate defect distribution and native oxide in high-κ dielectrics for III-V MOSFETs |
Autore/i: | Sereni, Gabriele; Larcher, Luca; Vandelli, Luca; Veksler, D.; Kim, T.; Koh, D.; Bersuker, Gennadi |
Autore/i UNIMORE: | |
Digital Object Identifier (DOI): | http://dx.doi.org/10.1016/j.mee.2015.04.111 |
Rivista: | |
Volume: | 147 |
Pagina iniziale: | 281 |
Pagina finale: | 284 |
Codice identificativo ISI: | WOS:000362308000067 |
Codice identificativo Scopus: | 2-s2.0-84928995373 |
Citazione: | A novel technique exploiting C-V, G-V and I-V simulations to investigate defect distribution and native oxide in high-κ dielectrics for III-V MOSFETs / Sereni, Gabriele; Larcher, Luca; Vandelli, Luca; Veksler, D.; Kim, T.; Koh, D.; Bersuker, Gennadi. - In: MICROELECTRONIC ENGINEERING. - ISSN 0167-9317. - 147(2015), pp. 281-284. |
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