A novel technique exploiting C-V, G-V and I-V simulations to investigate defect distribution and native oxide in high-κ dielectrics for III-V MOSFETs

Sereni, Gabriele; Larcher, Luca; Vandelli, Luca; Veksler, D.; Kim, T.; Koh, D.; Bersuker, Gennadi

doi:10.1016/j.mee.2015.04.111

In this paper we present a novel defect spectroscopy technique to investigate the properties of high-κ metal-gate oxides. This technique, based on the simultaneous simulations of I-V, C-V and G-V curves at different frequencies, allows profiling the distribution of interfacial and bulk defects inside the gate oxide and investigating the composition of the high-κ stacks on III-V materials. The proposed technique is applied to investigate the properties of high-κ stacks of InGaAs MOSFETs.

A novel technique exploiting C-V, G-V and I-V simulations to investigate defect distribution and native oxide in high-κ dielectrics for III-V MOSFETs / Sereni, Gabriele; Larcher, Luca; Vandelli, Luca; Veksler, D.; Kim, T.; Koh, D.; Bersuker, Gennadi. - In: MICROELECTRONIC ENGINEERING. - ISSN 0167-9317. - 147(2015), pp. 281-284.

Data di pubblicazione:	2015
Titolo:	A novel technique exploiting C-V, G-V and I-V simulations to investigate defect distribution and native oxide in high-κ dielectrics for III-V MOSFETs
Autore/i:	Sereni, Gabriele; Larcher, Luca; Vandelli, Luca; Veksler, D.; Kim, T.; Koh, D.; Bersuker, Gennadi
Autore/i UNIMORE:	SERENI, GABRIELE LARCHER, Luca VANDELLI, LUCA Veksler, D. Kim, T. Koh, D. BERSUKER , GENNADI mostra contributor esterni nascondi contributor esterni
Digital Object Identifier (DOI):	http://dx.doi.org/10.1016/j.mee.2015.04.111
Rivista:	MICROELECTRONIC ENGINEERING
Volume:	147
Pagina iniziale:	281
Pagina finale:	284
Codice identificativo ISI:	WOS:000362308000067
Codice identificativo Scopus:	2-s2.0-84928995373
Citazione:	A novel technique exploiting C-V, G-V and I-V simulations to investigate defect distribution and native oxide in high-κ dielectrics for III-V MOSFETs / Sereni, Gabriele; Larcher, Luca; Vandelli, Luca; Veksler, D.; Kim, T.; Koh, D.; Bersuker, Gennadi. - In: MICROELECTRONIC ENGINEERING. - ISSN 0167-9317. - 147(2015), pp. 281-284.
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http://hdl.handle.net/11380/1131121

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