We propose a new defect characterization technique for high-k dielectric stacks in III-V MOSFETs. This technique allows extracting the defect density from the simulations of the C-V and G-V characteristics at different frequencies. The simulation is performed using a physical distributed compact model, where the trap-assisted capture and emission processes are described in the framework of the multiphonon trap-assisted tunneling theory, including lattice relaxation. The technique, tested on InGaAs MOS devices with different gate-stacks, allows profiling the interfacial and bulk defects in the (E, z) domain. The extracted map, consistent with previous report, allows reproducing C-V and G-V curves on the whole frequency and gate voltage ranges and monitoring the quality of dielectric stacks for the optimization of the manufacturing process.
A New Physical Method Based on CV--GV Simulations for the Characterization of the Interfacial and Bulk Defect Density in High-k/III--V MOSFETs / Sereni, Gabriele; Vandelli, Luca; Veksler, Dmitry; Larcher, Luca. - In: IEEE TRANSACTIONS ON ELECTRON DEVICES. - ISSN 0018-9383. - 62:3(2015), pp. 705-712. [10.1109/TED.2014.2385959]
Data di pubblicazione: | 2015 | |
Titolo: | A New Physical Method Based on CV--GV Simulations for the Characterization of the Interfacial and Bulk Defect Density in High-k/III--V MOSFETs | |
Autore/i: | Sereni, Gabriele; Vandelli, Luca; Veksler, Dmitry; Larcher, Luca | |
Autore/i UNIMORE: | ||
Digital Object Identifier (DOI): | http://dx.doi.org/10.1109/TED.2014.2385959 | |
Rivista: | ||
Volume: | 62 | |
Fascicolo: | 3 | |
Pagina iniziale: | 705 | |
Pagina finale: | 712 | |
Codice identificativo ISI: | WOS:000350332000003 | |
Codice identificativo Scopus: | 2-s2.0-84923917927 | |
Citazione: | A New Physical Method Based on CV--GV Simulations for the Characterization of the Interfacial and Bulk Defect Density in High-k/III--V MOSFETs / Sereni, Gabriele; Vandelli, Luca; Veksler, Dmitry; Larcher, Luca. - In: IEEE TRANSACTIONS ON ELECTRON DEVICES. - ISSN 0018-9383. - 62:3(2015), pp. 705-712. [10.1109/TED.2014.2385959] | |
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